公开(公告)号：US08101990B2

公开(公告)日：2012-01-24

申请号：US11913578

申请日：2006-05-25

申请人： Takuya Tsurume ,  Nozomi Horikoshi

发明人： Takuya Tsurume ,  Nozomi Horikoshi

IPC分类号： H01L29/792

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78645

摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.

摘要翻译： 提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层， 设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。 晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

公开(公告)号：US20090090940A1

公开(公告)日：2009-04-09

申请号：US11913578

申请日：2006-05-25

申请人： Takuya Tsurume ,  Nozomi Horikoshi

发明人： Takuya Tsurume ,  Nozomi Horikoshi

IPC分类号： H01L29/78

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78645

摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.

摘要翻译： 提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层， 设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。 晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

公开(公告)号：US08459561B2

公开(公告)日：2013-06-11

申请号：US12204320

申请日：2008-09-04

申请人： Tomoyuki Aoki ,  Takuya Tsurume ,  Hiroki Adachi ,  Nozomi Horikoshi ,  Hisashi Ohtani

发明人： Tomoyuki Aoki ,  Takuya Tsurume ,  Hiroki Adachi ,  Nozomi Horikoshi ,  Hisashi Ohtani

IPC分类号： G06K19/06

CPC分类号： H01L23/29 ,  G06K19/07749 ,  H01L21/563 ,  H01L23/145 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10T428/31522 ,  H01L2924/00

摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

摘要翻译： 形成包括薄膜晶体管的分离层和半导体元件层。 形成与半导体元件层电连接的导电树脂。 包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。 在第一密封层，半导体元件层和分离层中形成凹槽。 将液体滴入槽中以分离分离层和半导体元件层。 去除导电树脂上的第一密封层以形成开口。 一组第一密封层和半导体元件层被分成芯片。 芯片结合到形成在基材上的天线。 形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

公开(公告)号：US09040998B2

公开(公告)日：2015-05-26

申请号：US13530392

申请日：2012-06-22

申请人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

发明人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

CPC分类号： H01L27/3246 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5237 ,  H01L51/5259

摘要： A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

摘要翻译： 提供抑制湿气性能下降的发光装置。 发光装置具有其中具有多孔结构的分隔件围绕每个发光元件的结构。 具有多孔结构的分隔物物理吸附水分; 因此，在发光装置中，隔板在与发光元件非常接近的部分处起吸湿性的作用，从而能够有效地吸附残留在发光元件中或从外部进入的水分或水蒸汽 。 因此，可以有效地抑制由于水分或水蒸气导致的发光装置的性能的降低。

公开(公告)号：US08822272B2

公开(公告)日：2014-09-02

申请号：US11885958

申请日：2006-03-17

申请人： Takuya Tsurume ,  Etsuko Asano

发明人： Takuya Tsurume ,  Etsuko Asano

IPC分类号： H01L29/36

CPC分类号： G01R31/2601 ,  G01R31/2607 ,  G01R31/2822 ,  G01R31/2884 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L22/34 ,  H01L23/66 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device capable of being easily subjected to a physical test without deteriorating characteristics. According to a measuring method of a semiconductor device in which an element layer provided with a test element including a terminal portion is sealed with first and second films having flexibility, the first film formed over the terminal portion is removed to form a contact hole reaching the terminal portion; the contact hole is filled with a resin containing a conductive material; heating is carried out after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are electrically connected via the resin containing a conductive material; and a measurement is performed.

摘要翻译： 提供能够容易进行物理测试而不劣化特性的半导体器件。 根据半导体器件的测量方法，其中设置有包括端子部分的测试元件的元件层被具有柔性的第一和第二膜密封，去除在端子部分上形成的第一膜以形成到达 端子部分 接触孔填充含有导电材料的树脂; 在将具有柔性的布线基板布置在已经进行了填充的树脂上之后进行加热，使得具有柔性的端子部分和布线基板通过包含导电材料的树脂电连接; 并进行测量。

公开(公告)号：US08734915B2

公开(公告)日：2014-05-27

申请号：US12391840

申请日：2009-02-24

申请人： Shunpei Yamazaki ,  Takahiro Ibe ,  Takuya Tsurume ,  Koichiro Tanaka ,  Satoshi Seo

发明人： Shunpei Yamazaki ,  Takahiro Ibe ,  Takuya Tsurume ,  Koichiro Tanaka ,  Satoshi Seo

IPC分类号： B05D3/06 ,  B05D5/12 ,  C23C14/32 ,  C23C14/28

CPC分类号： C23C14/28 ,  C23C14/048 ,  H01L27/3211 ,  H01L51/0013 ,  H01L51/56

摘要： A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.

摘要翻译： 可以在沉积基板上形成微图案薄膜而不在材料和沉积基板之间设置掩模的成膜方法。 此外，通过这样的成膜方法形成发光元件，并且可以制造高清晰度发光器件。 通过形成反射层，光吸收层和材料层的成膜基板，对光吸收层照射光，使得包含在材料层中的材料沉积在沉积基板上 配置成面对成膜基板。 由于选择性地形成反射层，所以可以以反射层的图案的微小图案选择性地形成沉积在沉积基板上的膜。 可以采用湿法来形成材料层。

公开(公告)号：US08673739B2

公开(公告)日：2014-03-18

申请号：US13303519

申请日：2011-11-23

申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

公开(公告)号：US08617995B2

公开(公告)日：2013-12-31

申请号：US13217543

申请日：2011-08-25

申请人： Takuya Tsurume ,  Akihiro Chida

发明人： Takuya Tsurume ,  Akihiro Chida

IPC分类号： H01L21/461

CPC分类号： H01L51/5253 ,  H01L51/5203 ,  H01L2251/5338 ,  H01L2251/558

摘要： When a semiconductor device having a surface provided with a flexible protective material is manufactured, the misalignment of the protective material occurs at the time of disposing the protective material or performing adhesion treatment. In the case where the terminal portion over the substrate has a length X of 5 mm or less, by providing a step layer with a thickness of 0.38 X or more and 2 mm or less over the element portion, a space is formed between a surface of the terminal portion and the protective material even though the protective material disposed over the step layer so as to cover the element portion is overlapped with the terminal portion. By using an attaching member including an elastic material with a surface hardness of 50 or more and 100 or less in this state, the protective material and the substrate may be attached to each other.

摘要翻译： 当制造具有设置有柔性保护材料的表面的半导体器件时，在设置保护材料或进行粘合处理时发生保护材料的未对准。 在衬底上的端子部分的长度X为5mm以下的情况下，通过在元件部分上设置厚度为0.38×2以上且2mm以下的台阶层，在表面 即使设置在台阶层上的覆盖元件部分的保护材料与端子部分重叠，也可以是端子部分和保护材料。 通过在这种状态下使用包括表面硬度为50以上且100以下的弹性材料的安装构件，可以将保护材料和基板相互连接。

公开(公告)号：US08338931B2

公开(公告)日：2012-12-25

申请号：US12767909

申请日：2010-04-27

申请人： Yoshitaka Dozen ,  Eiji Sugiyama ,  Hisashi Ohtani ,  Takuya Tsurume

发明人： Yoshitaka Dozen ,  Eiji Sugiyama ,  Hisashi Ohtani ,  Takuya Tsurume

IPC分类号： H01L23/02

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1255

摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.

摘要翻译： 在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。 该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。 该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

公开(公告)号：US08236629B2

公开(公告)日：2012-08-07

申请号：US13100316

申请日：2011-05-04

申请人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。