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    FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF DYNAMIC THRESHOLD TRANSISTOR
    58.
    发明申请
    FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF DYNAMIC THRESHOLD TRANSISTOR 有权
    半导体器件的制造方法和动态阈值晶体管的制造方法

    公开(公告)号：US20130210207A1

    公开(公告)日：2013-08-15

    申请号：US13552274

    申请日：2012-07-18

    申请人： Masahiro Fukuda ,  Eiji Yoshida ,  Yosuke Shimamune

    发明人： Masahiro Fukuda ,  Eiji Yoshida ,  Yosuke Shimamune

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66477 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/1207 ,  H01L29/0653 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/783 ,  H01L29/7848

    摘要： A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion.

    摘要翻译： 一种方法包括：除硅衬底部分之外，蚀刻硅衬底，在其上形成沟道区以在硅衬底部分的第一侧和第二侧分别形成第一和第二沟槽; 通过外延生长具有对硅蚀刻选择性的半导体层和另外的硅层来填充第一和第二沟槽; 通过选择性蚀刻工艺去除半导体层选择性，以在衬底部分的第一侧和第二侧分别在硅层下形成空隙; 至少部分地用掩埋绝缘膜掩埋空隙; 在所述硅衬底部分上形成栅极绝缘膜和栅电极; 以及在所述硅衬底部分的第一侧的所述硅层中形成源极区域以及在所述硅衬底部分的第二侧处形成漏极区域。

    Method of manufacturing a semiconductor device
    59.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08455324B2

    公开(公告)日：2013-06-04

    申请号：US12572702

    申请日：2009-10-02

    申请人： Masahiro Fukuda ,  Yosuke Shimamune

    发明人： Masahiro Fukuda ,  Yosuke Shimamune

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7833

    摘要： A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.

    摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成栅极绝缘膜和栅电极，通过干蚀刻在栅电极两侧的第一半导体衬底中形成第一凹槽，通过去除 底部和第一凹部的侧壁，并且在第二凹部中形成半导体层。

    Method for manufacturing semiconductor device
    60.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08283226B2

    公开(公告)日：2012-10-09

    申请号：US12690484

    申请日：2010-01-20

    申请人： Masahiro Fukuda ,  Yosuke Shimamune ,  Yuka Kase

    发明人： Masahiro Fukuda ,  Yosuke Shimamune ,  Yuka Kase

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823425 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/7843 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.

    摘要翻译： 一种制造半导体器件的方法包括在形成于第一有源区和第二有源区的栅电极上形成第一盖膜，在第一有源区上蚀刻第一盖膜，在形成于栅电极的栅电极上形成第二帽膜 第一有源区和第二有源区，在第一有源区上蚀刻第二覆盖膜，使用栅电极蚀刻第一有源区，以在第一有源区中形成凹部，并将半导体材料埋入凹部。