公开(公告)号：US08337253B2

公开(公告)日：2012-12-25

申请号：US12895277

申请日：2010-09-30

申请人： Zheng Gao ,  John Raff ,  Bartley K. Andre ,  Laura DeForest ,  Greg Springer ,  Min Chul Kim ,  Joshua Funamura

发明人： Zheng Gao ,  John Raff ,  Bartley K. Andre ,  Laura DeForest ,  Greg Springer ,  Min Chul Kim ,  Joshua Funamura

IPC分类号： H01R24/00

CPC分类号： H01R13/645 ,  H01R13/506 ,  H01R13/6271 ,  H01R13/6582 ,  H01R13/741 ,  H01R43/00 ,  H01R2201/06 ,  Y10T29/49204 ,  Y10T29/49208

摘要： Structures, methods, and apparatus that provide connector receptacles that have a reduced tendency to scratch and otherwise mar connector inserts, have an aesthetically-pleasing appearance, have an improved tactile response when inserts are inserted, or are very thin or have a low profile. Various examples reduce scratches and wear by utilizing domes, cylinders, balls, or other structures as finger contacts in a connector receptacle. Another example provides aesthetically-pleasing connector receptacle enclosures by forming receptacle enclosures using the same type of material, or material having the same or similar color or texture, as is used for enclosing the electronic device that includes the receptacle. Another example provides an aesthetically-pleasing receptacle enclosure by forming receptacle enclosures that are, in part or in whole, contiguous or formed with the housing. Another example provides a super-thin connector receptacle by removing fingers and portions of a shell along one or more sides.

摘要翻译： 提供连接器插座的结构，方法和装置具有降低的划痕趋势并且具有美观的外观，具有美观的外观，当插入件插入时具有改善的触觉响应，或者非常薄或具有低的外形。 各种示例通过利用圆顶，圆柱，球或其它结构作为连接器插座中的手指接触来减少划痕和磨损。 另一个例子通过使用相同类型的材料或具有与用于封闭包括容器的电子设备相同或相似颜色或纹理的材料形成插座外壳来提供美观的连接器插座外壳。 另一个例子通过形成与壳体相连或形成的部分或整体上的容器外壳来提供美观令人满意的插座外壳。 另一个实例通过沿一个或多个侧面去除手指和外壳的一部分来提供超薄连接器插座。

公开(公告)号：US08294227B2

公开(公告)日：2012-10-23

申请号：US13176029

申请日：2011-07-05

申请人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

发明人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

摘要翻译： 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

公开(公告)号：US20120164757A1

公开(公告)日：2012-06-28

申请号：US12979055

申请日：2010-12-27

申请人： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Kochan Ju ,  Stefan Maat

发明人： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Kochan Ju ,  Stefan Maat

IPC分类号： H01L21/02

CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/12

摘要： The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention. Subsequently, the thickness of the insulating layer, in this example can be extended to an appropriate thickness without exposing the sensor stack to damage causing oxygen and inter-diffusion.

摘要翻译： 本发明提供一种用于制造TMR传感器的方法，该方法在制造过程的中间阶段降低对传感器堆叠的损坏。 在本发明的一个实施例中，在形成传感器堆叠之后，保护层沉积在传感器堆叠上，该保护层提供了防止可能在制造过程的随后步骤中使用的材料。 随后将保护层转化为绝缘层，并将绝缘层的厚度延伸至适当的厚度。 在将保护层转换为绝缘层时，传感器堆叠不会直接暴露于可能会损坏传感器的材料。 例如，在本发明的一个实施方案中，使用Mg作为保护层，随后通过引入氧转化为MgO。 尽管氧与传感器堆的直接接触可能导致传感器堆的损坏，但通过本发明避免了直接接触。 随后，在该示例中，绝缘层的厚度可以扩展到适当的厚度，而不会使传感器堆不暴露以造成氧和相互扩散。

公开(公告)号：US20120083145A1

公开(公告)日：2012-04-05

申请号：US12895071

申请日：2010-09-30

申请人： Zheng Gao ,  Benjamin Rappoport ,  Steve McClure

发明人： Zheng Gao ,  Benjamin Rappoport ,  Steve McClure

IPC分类号： H01R13/635 ,  H01R13/639

CPC分类号： G06K13/0856 ,  G06K7/0069 ,  G06K7/0078

摘要： Connectors that may allow SIM cards to be easily removed and replaced, may be resistant to damage by an improper insertion of a SIM card, and may provide reliable mechanical performance. One example may provide a plunger system where a user can push on a plunger rod and eject a SIM card. Another example may provide contacts that are not damaged by improper insertion of a SIM card. Another example may provide a plastic housing, the housing reinforced by a metallic shield and having a relatively uniform thickness

摘要翻译： 可以容易地移除和更换SIM卡的连接器可以抵抗SIM卡的错误插入造成的损坏，并且可以提供可靠的机械性能。 一个示例可以提供柱塞系统，其中用户可以推动柱塞杆并弹出SIM卡。 另一个示例可以提供不会因SIM卡的不正确插入而损坏的触点。 另一个例子可以提供一种塑料外壳，该外壳由金属屏蔽件加强并具有相对均匀的厚度

公开(公告)号：US08125746B2

公开(公告)日：2012-02-28

申请号：US12502204

申请日：2009-07-13

申请人： Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

发明人： Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3912 ,  H01L43/08

摘要： A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.

摘要翻译： 隧道磁阻读取器包括将顶部磁屏蔽与底部磁屏蔽分开的传感器堆叠。 传感器堆叠包括具有参考磁化取向方向的参考磁性元件和具有基本上垂直于参考磁化定向方向的自由磁化取向方向的自由磁性元件。 非磁性间隔层将参考磁性元件与自由磁性元件分开。 第一侧磁屏蔽和第二侧磁屏蔽设置在顶部磁屏蔽与底部磁屏蔽之间，传感器堆叠位于第一侧磁屏蔽和第二侧磁屏蔽之间。 第一侧磁屏蔽和第二侧磁屏蔽将顶部磁屏蔽与底部磁屏蔽电绝缘。

公开(公告)号：US20120018788A1

公开(公告)日：2012-01-26

申请号：US13248361

申请日：2011-09-29

申请人： Yuankai Zheng ,  Xuebing Feng ,  Zheng Gao

发明人： Yuankai Zheng ,  Xuebing Feng ,  Zheng Gao

IPC分类号： H01L29/82

CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.

摘要翻译： 具有具有可切换磁化取向的多层自由层的磁性堆叠，所述自由层包括第一铁磁部分和在第一部分和第二部分之间具有导电非磁性中间层的第二铁磁部分。 磁性堆栈还包括具有钉扎磁化取向的第一铁磁参考层，在自由层和第一参考层之间的第一非磁性间隔层，具有钉扎​​磁化取向的第二铁磁参考层和第二非磁性参考层 间隔层在自由层和第二参考层之间。

公开(公告)号：US08039913B2

公开(公告)日：2011-10-18

申请号：US12425451

申请日：2009-04-17

申请人： Yuankai Zheng ,  Zheng Gao ,  Xuebing Feng

发明人： Yuankai Zheng ,  Zheng Gao ,  Xuebing Feng

IPC分类号： H01L29/82

CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.

摘要翻译： 具有具有可切换磁化取向的多层自由层的磁性堆叠，所述自由层包括第一铁磁部分和在第一部分和第二部分之间具有导电非磁性中间层的第二铁磁部分。 磁性堆栈还包括具有钉扎磁化取向的第一铁磁参考层，在自由层和第一参考层之间的第一非磁性间隔层，具有钉扎​​磁化取向的第二铁磁参考层和第二非磁性参考层 间隔层在自由层和第二参考层之间。

公开(公告)号：US07999338B2

公开(公告)日：2011-08-16

申请号：US12502209

申请日：2009-07-13

申请人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

发明人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

摘要翻译： 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

公开(公告)号：US07961509B2

公开(公告)日：2011-06-14

申请号：US12903305

申请日：2010-10-13

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US20110104945A1

公开(公告)日：2011-05-05

申请号：US12895277

申请日：2010-09-30

申请人： Zheng Gao ,  John Raff ,  Bartley K. Andre ,  Laura DeForest ,  Greg Springer ,  Min Chul Kim ,  Joshua Funamura

发明人： Zheng Gao ,  John Raff ,  Bartley K. Andre ,  Laura DeForest ,  Greg Springer ,  Min Chul Kim ,  Joshua Funamura

IPC分类号： H01R13/648 ,  H01R43/16

CPC分类号： H01R13/645 ,  H01R13/506 ,  H01R13/6271 ,  H01R13/6582 ,  H01R13/741 ,  H01R43/00 ,  H01R2201/06 ,  Y10T29/49204 ,  Y10T29/49208

摘要： Structures, methods, and apparatus that provide connector receptacles that have a reduced tendency to scratch and otherwise mar connector inserts, have an aesthetically-pleasing appearance, have an improved tactile response when inserts are inserted, or are very thin or have a low profile. Various examples reduce scratches and wear by utilizing domes, cylinders, balls, or other structures as finger contacts in a connector receptacle. Another example provides aesthetically-pleasing connector receptacle enclosures by forming receptacle enclosures using the same type of material, or material having the same or similar color or texture, as is used for enclosing the electronic device that includes the receptacle. Another example provides an aesthetically-pleasing receptacle enclosure by forming receptacle enclosures that are, in part or in whole, contiguous or formed with the housing. Another example provides a super-thin connector receptacle by removing fingers and portions of a shell along one or more sides.

摘要翻译： 提供连接器插座的结构，方法和装置具有降低的划痕趋势并且具有美观的外观，具有美观的外观，当插入件插入时具有改善的触觉响应，或者非常薄或具有低的外形。 各种示例通过利用圆顶，圆柱，球或其它结构作为连接器插座中的手指接触来减少划痕和磨损。 另一个例子通过使用相同类型的材料或具有与用于封闭包括容器的电子设备相同或相似的颜色或纹理的材料形成插座外壳来提供美观的连接器插座外壳。 另一个例子通过形成与壳体相连或形成的部分或整体上的容器外壳来提供美观的插座外壳。 另一个实例通过沿一个或多个侧面去除手指和外壳的一部分来提供超薄连接器插座。