摘要:
Fibroblast growth factor (FGF) or a mutein of FGF is stabilized by bringing FGF or a mutein of FGF into contact with a glucan sulfate in an aqueous medium. Thus obtained composition comprising (a) FGF or a mutein of FGF and (b) a glucan sulfate is stabilized, so that it can be advantageously administered to warm-blooded animals.
摘要:
Disclosed in this invention is a process for producing a long-chain dicarboxylic acid by culturing a fungus belonging to Candida tropicalis which has the ability to produce a long-chain dicarboxylic acid in a liquid medium containing a straight-chain saturated hydrocarbon as substrate, the production of said dicarboxylic acid being phenomenally increased by properly adjusting the pH of the medium in the course of culture. There is also disclosed a method for advantageously separating and collecting said dicarboxylic acid from a fermentation broth containing said dicarboxylic acid produced by said culture.
摘要:
.beta.-1,3-Glucan derivatives, which are produced by reacting a water-insoluble .beta.-1,3-glucan with a cyanogen halide, are a useful water-insoluble carrier of high reactivity for the production of water-insoluble enzymes and of carrier-ligand products suitable for affinity chromatography.
摘要:
A motor control device that has a high-frequency component, and a DC bias component that has a magnitude which causes a motor to be magnetically saturated and take on a certain value over a predetermined period, and is positively and negatively symmetrical are impressed as an observation command on a d-axis current command. The polarity of the magnetic pole of a permanent magnet is identified based on a relationship of large and small magnitudes between a first amplitude, which is attained during a period during which a DC bias component takes on a positive certain value, among amplitudes of a high-frequency component contained in a d-axis response voltage computed based on a feedback current respondent to the observation command, and a second amplitude attained during a period during which the DC bias component takes on a negative certain value.
摘要:
According to one embodiment, a USB memory device includes a cylinder lock, a storage unit, and a control unit. The storage unit is capable of storing data. The control unit prohibits at least part of access to the storage unit from an outside when the cylinder lock is locked.
摘要:
A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.
摘要:
A connector includes a male connector part composed of a male terminal, a first main body to which the male terminal is attached, and a first terminal housing portion composed of a first housing opening portion in which an end of the male terminal is exhibited and a predetermined housing space in which the male terminal is housed, a female connector part composed of a female terminal into which the male terminal is inserted, the male terminal being electrically connected to the female terminal by fitting the male connector part with the female connector part, a holding means inside the female terminal for holding the male terminal in a vertical direction, and a touch protecting means inside the first terminal housing portion for protecting the male terminal housed in the predetermined housing space from being touched by a foreign body. The touch protecting means includes an insulating portion for covering a part of the male terminal including the end of the male terminal except a part contacting the holding means when the male terminal is inserted into the female terminal, and a pair of projecting portions projecting in the predetermined housing space of the first terminal housing portion and at a position opposite the part contacting the holding means when the male terminal is inserted into the female terminal such that the male terminal is sandwiched therebetween in the vertical direction.
摘要:
An apparatus and method for image fixing are disclosed. A fixing device includes a fixing member, a pressure member, a heater, and a pressure controller. The fixing member and the pressure member face with each other to form a nip. The heater heats a surface of the fixing member when the fixing member rotates. The pressure controller changes a pressure generated at the nip, according to an operation of the fixing device.
摘要:
A developing device capable of conveying discharged developer to the outside of the device well by preventing developer from firmly adhering within a discharge conveyance path, as well as an image forming apparatus and a process cartridge having this developing device. A developing device, having: a developing roller; a developer conveyance path having a supply screw and a supply conveyance path; a toner replenishment controller for replenishing the developer to the developer conveyance path; a discharge conveyance path for conveying the developer to the outside of the developing device; a discharge screw serving as a discharge conveying member for applying a conveying force to the developer within the discharge conveyance path; and a developer discharge port serving as developer discharge means for discharging the developer to the discharge conveyance path, wherein the conveying force is applied to the discharged developer intermittently by the discharge screw serving as a discharge conveying member, whereby a shock is applied intermittently to the discharged developer within the discharge conveyance path.
摘要:
It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi2 layer through annealing; forming a Ni layer on the NiSi2 layer; and silicidating the NiSi2 layer through annealing.