摘要:
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
摘要翻译:一种用于从包含铜,低k电介质材料和TiN,TiN x O y或W的衬底去除光致抗蚀剂,聚合物材料,蚀刻残余物和氧化铜的半导体处理组合物和方法,其中组合物包含水,至少一种选自Cl- 或Br-,并且其中金属硬掩模仅包含TiN或TiN x O y,任选地至少一种氢氧化物源。
摘要:
A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate:; and at least between 0.5 and 2 min of washing time.
摘要翻译:一种在抛光后在超大规模集成电路中清洗铜材表面的方法,该方法包括:a)将1〜4wt。 %表面活性剂,0.5至3wt。 %的螯合剂,0.1至5wt。 %的腐蚀抑制剂和去离子水,得到pH值在7.4和8.2之间的水溶性清洁溶液; 和b)在以下条件下在碱性化学机械抛光之后使用清洁溶液洗涤铜材料表面:压力在2000-3000Pa之间; 1000〜5000 mL / min的流速: 并且洗涤时间至少为0.5至2分钟。
摘要:
Automatic dishwashing detergent compositions and compositions of matter, having polyvalent metal compounds and high levels of low-foaming, nonionic surfactants, are provided for protecting glassware from corrosion.
摘要:
Formulations comprising (A) at least one compound selected from aminocarboxylates and polyaminocarboxylates, and salts and derivatives thereof, (B) at least one zinc salt, and (C) at least one homopolymer or copolymer of ethyleneimine.
摘要:
A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.
摘要:
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, a Cu corrosion inhibitor, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises TiN or TiNxOy, at least one hydroxide source.
摘要翻译:一种用于从包含铜,低k电介质材料和TiN,TiN x O y或W的衬底去除光致抗蚀剂,聚合物材料,蚀刻残留物和氧化铜的半导体处理组合物和方法,其中组合物包括水,Cu腐蚀抑制剂,至少一种卤化物 选自Cl-或Br-的阴离子,并且其中金属硬掩模包含TiN或TiNxOy,至少一种氢氧化物源。
摘要:
A multi-use cloth for cleaning and conditioning metal and non-metal objects includes a two-layer, three-layer or multi-layer structure. Each layer is made of material either capable of retaining an oil, aqueous solution, aqueous suspension or solid or capable of preventing penetration of an oil, aqueous solution, aqueous suspension or solid. In a three-layer or multi-layer cloth, the separation layer is affixed in between two layers having one or both layers embedded with an oil, aqueous solution, or aqueous suspension. In a two-layer cloth, the separation layer is affixed to one side of the layer that is embedded with an oil, aqueous solution or an aqueous suspension. The cloth is folded with the oil, or aqueous solution, or aqueous suspension embedded side on an inner side. A user's hand holds the outside of the cloth and no contamination from oil, aqueous solution, or aqueous suspension or solid occurs.
摘要:
A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
摘要:
A warewashing detergent composition is provided including an alkalinity source, a corrosion inhibitor and optionally, a cleaning agent. The glass corrosion inhibitor includes at least a soluble lithium salt and optionally includes a soluble aluminum salt and/or a soluble silicate salt. The warewashing detergent composition has a pH of at least about 8.
摘要:
Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.