Abstract:
The purpose of the present invention is to make it possible to output stable light by optimizing the wavelength conversion efficiency in a wavelength conversion element without employing an optical detection device such as a photo diode in a laser light source device. A fundamental light wave emitted from a semiconductor laser (2) is wavelength converted by a wavelength conversion element (5) and is emitted therefrom. A lighting circuit (20) supplies electric power for the aforementioned semiconductor laser (2) to turn on the semiconductor laser (2). A control unit (21) controls the operation of the device while controlling the amount of power supplied to a heater means (7) such that the wavelength conversion element (5) reaches a temperature at which optimum wavelength conversion efficiency is acquired. The temperature detected by a temperature detection means (Th1) is input to the control unit (21), and the control unit (21) defines the temperature of the wavelength conversion element (5) at which the maximum amount of power is supplied to the heater means (7) as a set temperature at which the optimum wavelength conversion efficiency is acquired, and performs feedback control of the temperature of the wavelength conversion element (5) so that the temperature of the wavelength conversion element (5) reaches the aforementioned set temperature by controlling the amount of heat supplied from the heater means (7).
Abstract:
A short optical pulse generating apparatus includes: an optical pulse generating portion that generates an optical pulse; and a pulse compressing portion to which the optical pulse is incident and that decreases the pulse width of the optical pulse, wherein the pulse compressing portion includes a quantum well layer, group velocity dispersion layers that are stacked to interpose the quantum well layer therebetween and are formed with a group velocity dispersion medium, and reflective layers that are provided to interpose the quantum well layer and the group velocity dispersion layers in a stacking direction of the quantum well layer and the group velocity dispersion layers.
Abstract:
An optical switching system comprising an embodiment with a high pass filter operable to eliminate a portion of frequencies present in an image and an optical device operative to receive the spectrally modified image from the high pass filter, alternatively amplify the spectrally modified image, and propagate at least those frequency components in the spectrally modified image exhibiting a frequency less than an absorption frequency of the optical switching device when the optical switching device is active. Alternatively, the optical switching system may transmit an image only when the system is active. The optical switching system may, for example, comprise superluminescent light emitting diodes which may be, for example, formed in the shape of an inverted truncated prism. For human viewing purposes, the operative transmission ranges may closely coincide with the maximum sensitivity of the photopic response of the corresponding red, blue and green cones in human eyes.
Abstract:
A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
Abstract:
A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
Abstract:
A method of optically outputting information (e.g. digital data) from a semiconductor device, the method comprising: providing a semiconductor device having a semiconducting p-n junction, the p-n junction having a region of reduced free charge carrier density; applying an electrical signal to modulate the extent of the said region, the electrical signal being representative of the information to be outputted; arranging incident light to pass through at least part of the said region, such that the light is at least partially absorbed in dependence upon the modulated extent of the said region, thereby producing intensity-modulated output light; and detecting the intensity of the output light and thereby determining the outputted information. Also provided is an electro-optical assembly, a package module for mounting a semiconductor device on a printed circuit board, and an integrated circuit chip.
Abstract:
A Mach-Zehnder interferometer type optical modulator includes a first end facet and a reflecting portion opposing the first end facet; a single optical coupler including input and output ports, the optical coupler being disposed between the first end facet and the reflecting portion; first and second optical waveguides that are connected to the input ports of the optical coupler; third and fourth optical waveguides that are connected to the output ports of the optical coupler; and a phase shifting section disposed between the optical coupler and the reflecting portion. The phase shifting section includes a first optical waveguide structure constituting part of the third optical waveguide; a first upper electrode on the first optical waveguide structure; a second optical waveguide structure constituting part of the fourth optical waveguide; and a second upper electrode on the second optical waveguide structure.
Abstract:
Methods and systems are provided to reduce stimulated Brillouin scattering in high power optical fiber amplifiers. In an embodiment, a seed source includes a narrow linewidth semiconductor laser driven with a current ramp that simultaneously sweeps the optical power and the lasing frequency at a rate fast enough to reduce stimulated Brillouin scattering.
Abstract:
Structures and techniques are disclosed that enable efficient generation of terahertz (THz) radiation capable of surpassing the fundamental quantum limit, as defined by the Manley-Rowe relations. In one particular embodiment, a difference frequency mixing (DFM) crystal stage receives pump radiation and signal radiation, and generates THz radiation. Leftover signal radiation from the DFM stage is then used to pump an optical parametric oscillator (OPO) stage, which is used to generate another mixing signal and more THz radiation. The output signal and the residual pump from the OPO stage can then be used in a subsequent DFM process to generate even more terahertz radiation, and further drives a subsequent OPO stage. Such cascaded OPO, DFM, OPO staging can be repeated to maximize total amount of THz output power.
Abstract:
Structures and techniques are disclosed that enable efficient generation of terahertz (THz) radiation capable of surpassing the fundamental quantum limit, as defined by the Manley-Rowe relations. In one particular embodiment, a difference frequency mixing (DFM) crystal stage receives pump radiation and signal radiation, and generates THz radiation. Leftover signal radiation from the DFM stage is then used to pump an optical parametric oscillator (OPO) stage, which is used to generate another mixing signal and more THz radiation. The output signal and the residual pump from the OPO stage can then be used in a subsequent DFM process to generate even more terahertz radiation, and further drives a subsequent OPO stage. Such cascaded OPO, DFM, OPO staging can be repeated to maximize total amount of THz output power.