公开(公告)号：US5172336A

公开(公告)日：1992-12-15

申请号：US734098

申请日：1991-07-23

申请人： Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

发明人： Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

IPC分类号： G11C19/08

CPC分类号： G11C19/0816 ,  G11C19/0858

摘要： A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.

摘要翻译： 在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤：在磁性薄膜上分配预定的软磁性材料层图案，向磁性薄膜施加磁场 软磁材料层图案平行于磁性薄膜的薄膜表面，以在磁性薄膜中形成势阱，将布洛赫线定位在势阱中，并改变软磁材料层图案的磁化方向 平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。

公开(公告)号：US5142491A

公开(公告)日：1992-08-25

申请号：US798053

申请日：1991-11-27

申请人： Yoichi Osato

发明人： Yoichi Osato

IPC分类号： G11C19/08

CPC分类号： G11C19/0875 ,  G11C19/0816 ,  G11C19/0883

摘要： Disclosed is an improved magnetic bubble recording device for optically effecting writing, reading and erasure of information with respect to magnetic bubbles. The magnetic bubble recording device has a basic structure in which a first magnetic film for forming a magnetic bubble therein and a second magnetic film for imparting a bias magnetic field to the first magnetic film to stably hold the maganetic bubble in the first magnetic film are provided on a substrate on which is formed a transfer pattern for transferring a magnetic bubble along the transfer pattern, thereby providing a portable magnetic bubble recording device at low cost and with a simple structure. In addition, an alignment pattern for aligning the device with a light beam applied to the device is formed on the device, thereby permitting accurate writing and reading. The peripheral edge portion of the pattern of a transfer channel has a surface inclined with respect to the substrate surface so as to transfer the magnetic bubble favorably. Further, a device is provided in which a first transfer channel includes a plurality of transfer channels that do not intersect each other and a second transfer channel that intersects the transfer channels constituting the first transfer channel, formed so as to effect optical reading and writing smoothly and at high speed.

摘要翻译： 公开了一种用于光学地实现关于磁性气泡的信息的写入，读取和擦除的改进的气泡记录装置。 磁气泡记录装置具有其中用于形成磁性气泡的第一磁性膜和用于向第一磁性膜施加偏置磁场以稳定地保持第一磁性膜中的杂散气泡的第二磁性膜的基本结构 在其上形成有用于沿着转印图案转印磁性气泡的转印图案的基板上，从而以低成本和简单的结构提供便携式气泡记录装置。 此外，在装置上形成用于使装置与施加到装置的光束对准的对准图案，从而允许准确的写入和读取。 传送通道的图案的周边部分具有相对于基板表面倾斜的表面，以便有利地转移磁性气泡。 此外，提供一种装置，其中第一传送通道包括不彼此交叉的多个传送通道，以及与构成第一传送通道的传送通道相交的第二传送通道，以便顺利地进行光学读写 并以高速度。

公开(公告)号：US4974201A

公开(公告)日：1990-11-27

申请号：US72668

申请日：1987-07-13

申请人： Takeo Ono ,  Hitoshi Oda

发明人： Takeo Ono ,  Hitoshi Oda

IPC分类号： G11C19/08

CPC分类号： G11C19/0841

摘要： A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall. As a result, the Bloch lines so written are transferred in succession to another location in the domain or to a read-out area.

摘要翻译： 公开了一种用于传输形成在磁畴的磁壁中的Bloch线和用于在形成在磁畴的磁壁中的Bloch线作为信息载体来记录/再现信息的磁存储装置的处理。 该方法包括在磁壁中形成正或负磁荷区域的步骤，从而将Bloch线连接到该区域，并移动磁荷区域，从而移动Bloch线。 该装置包括具有条形磁畴的存储器衬底，根据输入信息将Bloch线写入条形磁畴的磁壁中的方式，读取如此存储的Bloch线以便再现信息的方式 电信号的形式和将平行于存储器基板的平面的旋转磁场施加到条形磁畴的方式，以沿着磁壁移动布洛赫线。 因此，如此写入的Bloch行连续转移到域中的另一个位置或读取区域。

公开(公告)号：US4962477A

公开(公告)日：1990-10-09

申请号：US505617

申请日：1983-06-20

申请人： Leonard J. Schwee

发明人： Leonard J. Schwee

IPC分类号： G11C19/08

CPC分类号： G11C19/08 ,  G11C19/0858

摘要： An enhanced random access memory element and a process for its fabrication,herein permalloy thin films are patterned, inter alia, into a plurality of geminous memory cells to form a matrix or array of juxtaposed sloped columns thereof is disclosed. Each of the geminous memory cells is configured into a unique pattern comprising twin sub-patterns joined in an opposite fashion, i.e. reversed and inversed, so as to share a common area of permalloy. Consequently, magnetic domain walls (Neel walls) are formed at opposite and adjacent apexes of the unique pattern parallel to the easy axis after a predetermined magnetic field is applied along the hard axis of the array of geminous memory cells and then reduced to zero. In this way, the magnetization is properly aligned for use of the array of geminous memory cells as an enhanced nonvolatile random access memory element. Subsequent magnetization of the proper amount at particular ones of the geminous memory cells will cause two crossties and two Bloch lines to form therein so as to couple to each other, crosstie to Bloch line, Bloch line to crosstie. This configuration provides a larger readout signal, a larger signal to noise ratio, and will operate at lower power levels for the same density of information than previous crosstie random access memory elements.

摘要翻译： 增强的随机存取存储器元件及其制造方法，其中坡莫合金薄膜特别被图案化成多个双晶存储器单元以形成并置的倾斜柱的阵列或阵列。 每个双层存储单元被配置成独特的图案，其包括以相反的方式连接的双子图案，即反向和反转，以便共享坡莫合金的公共区域。 因此，在沿着双晶存储器单元阵列的硬轴施加预定磁场之后，磁畴壁（Néel壁）形成在与容易轴平行的独特图案的相对和相邻顶点处，然后减小到零。 以这种方式，磁化被适当地对准，以使用作为增强的非易失性随机存取存储器元件的双重存储器单元的阵列。 随后在特定的双子记忆单元中的适当量的磁化将导致在其中形成两个交叉点和两个Bloch线，以便彼此耦合，交叉到Bloch线，Bloch线交叉。 该配置提供更大的读出信号，更大的信噪比，并且对于与先前的交叉随机存取存储器元件相同的信息密度将在较低功率水平下操作。

公开(公告)号：US4912673A

公开(公告)日：1990-03-27

申请号：US292301

申请日：1988-12-30

申请人： Jean-Marc Fedeli ,  Joel Magnin ,  Marie-Therese Delaye ,  Marc Rabarot

发明人： Jean-Marc Fedeli ,  Joel Magnin ,  Marie-Therese Delaye ,  Marc Rabarot

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0866 ,  G11C19/0858

摘要： Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6). The barrier or barriers (20, 22, 26, 28, 30) can be constituted by a high energy implantation of H.sub.2.sup.+ ions.

摘要翻译： 使用行人字形图案的混合技术中的磁性气泡记忆。 存储器检测系统具有由行人字形构成的主动检测区域（4），以便从传播路径（2）和第一检测器（8）拉伸成条带形式的气泡。 气泡消除区（12），其通过强制反向装置（18）构成，用于阻止气泡的前进并将其迫使在检测系统外部; 以及位于气泡消除区（12）之后并且包含没有气泡必须暴露的第二检测器（9）的被动检测区（6），以便消除由旋转磁场的影响引起的不需要的信号 气泡传播所必需的。 根据本发明，消除区域（12）设置有至少一个通过离子注入产生的阻挡层（20），以阻挡气泡从活性区域（4）到被动区域（6）的通过。 阻挡层或障碍物（20,22,26,28,30）可以由H 2 +离子的高能量注入构成。

公开(公告)号：US4901278A

公开(公告)日：1990-02-13

申请号：US54977

申请日：1987-05-28

申请人： Leonard J. Schwee

发明人： Leonard J. Schwee

IPC分类号： G11C19/08

CPC分类号： G11C19/0858

摘要： The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words.

摘要翻译： 本发明涉及使用这种Bloch行存储元件的Bloch行存储元件和非易失性RAM存储器。 布洛赫线存储元件包括具有由壁分隔的磁畴的平面磁存储元件，该磁畴包含布置在各个存储元件内的布洛赫线。 重合写入线与用于将Bloch线写入到存储元件内的预定区域的磁性元件相互作用。 为了感测在预定区域内存在或不存在布洛赫线，使用一个写导体和感测线来确定特定存储元件的逻辑状态。 多个存储器元件设置在地址矩阵中，并且可以被选择用于从特定的布洛赫线RAM存储器元件读取或写入以用于确定或写入字的位。

公开(公告)号：US4827218A

公开(公告)日：1989-05-02

申请号：US145720

申请日：1988-01-15

申请人： Paul L. Meunier ,  Ernst Huijer ,  Manijeh Razeghi ,  Jean C. Lehureau

发明人： Paul L. Meunier ,  Ernst Huijer ,  Manijeh Razeghi ,  Jean C. Lehureau

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/49 ,  G11C19/08 ,  H01L43/08 ,  G01R33/06 ,  G06K7/08 ,  H01L27/22 ,  H01L43/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3993 ,  G11B5/4946 ,  G11B5/4969 ,  G11B5/4976 ,  G11C19/0866 ,  H01L43/08 ,  G11B2005/0032

摘要： A magnetoresistance-effect sensor for use in a magnetic domain detector for reading data recorded on magnetic tapes or in magnetic bubble memories mainly consists of a layer of semiconductor material which carries a layer of ferrimagnetic material on one face and at least one pair of electrodes disposed along an axis OX on the other face, the layer of ferrimagnetic material being placed in proximity to the magnetic data carrier. A magnetic data item thus induces a magnetic field in the layer of semiconductor material in a direction OY perpendicular to the axis OX of the pair of electrodes.

摘要翻译： 用于读取记录在磁带或磁性气泡存储器中的数据的磁畴检测器中使用的磁阻效应传感器主要由一层半导体材料构成，该半导体材料层在一个表面上承载一层铁磁材料，并且至少一对电极设置在 沿着另一面上的轴线OX，铁磁材料层被放置在磁数据载体附近。 因此，磁数据项在垂直于该对电极的轴线OX的方向OY上引起半导体材料层中的磁场。

公开(公告)号：US4773054A

公开(公告)日：1988-09-20

申请号：US8181

申请日：1987-01-29

申请人： Marie-Therese Delaye ,  Jean-Marc Fedeli ,  Joel Magnin ,  Marc Rabarot

发明人： Marie-Therese Delaye ,  Jean-Marc Fedeli ,  Joel Magnin ,  Marc Rabarot

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0891

摘要： A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.

摘要翻译： 在由注入区域和非植入区域之间的边界限定的第一传播路径和由沉积图案序列定义的第二传播轨道之间形成的具有混合结的气泡存储器。 轨道之间的重叠区域具有与磁性气泡大致相等的表面。 由磁性气泡清除的边界具有垂直于存储器的磁性材料的易磁化轴的方向，并且在沉积图案的一条腿下方形成注入区域。

公开(公告)号：US4754429A

公开(公告)日：1988-06-28

申请号：US732295

申请日：1985-05-09

申请人： Kouei Kashiro ,  Toshiaki Sukeda ,  Satoru Imai ,  Sakan Takai ,  Harumi Maegawa

发明人： Kouei Kashiro ,  Toshiaki Sukeda ,  Satoru Imai ,  Sakan Takai ,  Harumi Maegawa

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/085

摘要： A cassette type magnetic bubble memory comprise a bubble memory device including a bubble memory chip and lead terminals; a connector having contacts for electrically connecting the bubble memory device to an outside unit; thin flexible printed substrates for electrically connecting the contacts of the connector to the lead terminals of the bubble memory device; and a cassette case for accommodating therein the bubble memory device, the connector, and the printed substrates. The cassette case has inner walls. Some parts of the inner walls are in contact with at least some parts of an outer face of the bubble memory device to retain the device in the cassette case so that the majority of the outer face of the device is spaced from the majority of the inner walls of the cassette case. The bubble memory device and the connector are arranged in displaced positions along a plane common to the longitudinal direction of insertion of the cassette case into a bubble memory control unit.

摘要翻译： 磁带式磁气泡存储器包括：气泡存储装置，其包括气泡存储芯片和引线端子; 具有用于将气泡存储装置电连接到外部单元的触点的连接器; 薄的柔性印刷基板，用于将连接器的触点电连接到气泡存储装置的引线端子; 以及用于在其中容纳气泡存储装置，连接器和印刷基板的盒壳体。 磁带盒具有内壁。 内壁的一些部分与气泡存储装置的外表面的至少一些部分接触，以将装置保持在盒壳体中，使得装置的大部分外表面与内部的大部分间隔开 磁带盒的墙壁。 气泡存储装置和连接器沿着与盒壳体插入气泡存储器控制单元的纵向方向共同的平面布置在位移​​位置。

公开(公告)号：US4745578A

公开(公告)日：1988-05-17

申请号：US898517

申请日：1986-08-21

申请人： Teruaki Takeuchi ,  Naoki Kodama ,  Masatoshi Takeshita ,  Takashi Toyooka ,  Ryo Suzuki

发明人： Teruaki Takeuchi ,  Naoki Kodama ,  Masatoshi Takeshita ,  Takashi Toyooka ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08

CPC分类号： G11C19/0891

摘要： A magnetic bubble memory device comprises contiguous-disk ion-implanted magnetic bubble propagation tracks formed by implanting selectively ions in a magnetic layer which can hold magnetic bubbles. At least one of the disks which form the ion-implanted bubble tracks and each of which may have a circular or square shape, is configured to include a combination of arcs of circles having different curvatures or a combination of sides of squares having different sizes.

摘要翻译： 磁性气泡存储装置包括通过将磁选择性地离子注入到能够保持磁性气泡的磁性层中而形成的连续盘离子注入的气泡传播轨迹。 形成离子注入气泡轨道的圆盘中的至少一个可以具有圆形或正方形形状，被构造为包括具有不同曲率的圆弧或具有不同尺寸的正方形的组合的组合。