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公开(公告)号:US20200376602A1
公开(公告)日:2020-12-03
申请号:US16768623
申请日:2018-11-26
申请人: Acergy France SAS
IPC分类号: B23K26/348 , B23K9/173 , B23K9/16 , B23K9/235 , B23K9/095 , B23K26/354 , B23K26/70
摘要: A weld is formed in a workpiece such as a pipeline by first activating a melting device, such as a laser, to form a molten weld pool in the workpiece and then activating a welding device, such as a GMAW torch, to initiate a weld in the weld pool. The weld therefore incorporates the weld pool homogeneously. Relative movement between the activated welding device and the workpiece continues and completes the weld while the melting device remains deactivated.
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公开(公告)号:US20200328132A1
公开(公告)日:2020-10-15
申请号:US16914903
申请日:2020-06-29
申请人: DENSO CORPORATION
发明人: Wataru KOBAYASHI , Kazuki KODA
IPC分类号: H01L23/31 , H01L23/495 , H01L23/00 , H01L21/48 , B23K26/354 , B29C65/00 , H01L23/50 , B23K26/00
摘要: An electronic device includes: a support member that has a metallic placement surface joined to the conductive bonding layer, and a metallic sealing surface provided on an outer side of the placement surface in an in-plane direction of the placement surface to adjoin the placement surface and to surround the placement surface; and a resin member, which is a synthetic resin molded article, joined to the sealing surface and covering the electronic component. The sealing surface includes a rough surface having a plurality of laser irradiation marks having a substantially circular shape. The rough surface includes a first region and a second region. The second region has a higher density of the laser irradiation marks in the in-plane direction than the first region.
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公开(公告)号:US10786873B2
公开(公告)日:2020-09-29
申请号:US15748059
申请日:2016-07-28
发明人: Shinji Kodama , Yujiro Tatsumi , Shoko Oami , Yasuaki Naito
IPC分类号: B23K26/354 , C22C38/50 , B23K9/02 , B23K35/30 , B23K9/025 , C22C38/00 , C22C38/02 , C22C38/06 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/58 , B23K101/00
摘要: A fillet arc welded joint formed by fillet arc welding at least two metal members, comprising a remelted and solidified portion obtained by irradiating a laser at a weld toe portion of the fillet arc welding of at least one metal member and a region including a boundary of the heat affected zone caused by the fillet arc welding at the surface of that metal member, the remelted and solidified portion being a range from a surface of the metal member to a depth of ½ or less of the thickness of that metal member, an average effective crystal grain diameter of prior austenite at a heat affected zone from a boundary of the remelted and solidified portion at the surface of the metal member to a depth of 0.1 mm in the thickness direction of the metal member being 20 μm or less.
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54.
公开(公告)号:US20200290154A1
公开(公告)日:2020-09-17
申请号:US16831232
申请日:2020-03-26
申请人: Sigma Labs, Inc.
发明人: Darren Beckett , Scott Betts , Martin Piltch , R. Bruce Madigan , Lars Jacquemetton , Glenn Wikle , Mark J. Cola , Vivek R. Dave , Alberto M. Castro , Roger Frye
IPC分类号: B23K26/34 , B33Y10/00 , B23K26/354 , B23K15/00 , B33Y50/02 , B23K26/342 , B23K26/03 , B23K26/082 , B29C64/153 , B23K31/12 , B23K26/06
摘要: This disclosure describes various methods and apparatus for characterizing an additive manufacturing process. A method for characterizing the additive manufacturing process can include generating scans of an energy source across a build plane; measuring an amount of energy radiated from the build plane during each of the scans using an optical sensing system that monitors two discrete wavelengths associated with a blackbody radiation curve of the layer of powder; determining temperature variations for an area of the build plane traversed by the scans based upon a ratio of sensor readings taken at the two discrete wavelengths; determining that the temperature variations are outside a threshold range of values; and thereafter, adjusting subsequent scans of the energy source across or proximate the area of the build plane.
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公开(公告)号:US20200269355A1
公开(公告)日:2020-08-27
申请号:US16727726
申请日:2019-12-26
发明人: Lingfei Ji , Ximin Zhang , Wenhao Wang , Tianyang Yan , Rui Ma
IPC分类号: B23K26/354 , B23K26/00
摘要: The invention disclose a picosecond-nanosecond laser composite asynchronous ceramics polishing method. First, a picosecond laser is used to scan and irradiate the ceramic surface along the scanning path. At the same time, ceramic surface is initially flattened and the electronic state of materials is removed by picosecond laser to produce micro-nanoparticles. Micro-nanoparticles exist as ionized state in the adjacent space region of irradiated ceramics surface. Then, low energy density nanosecond laser is used according to a preset time to irradiate and melt these micro-nanoparticles which can easily form a dense and smooth fine crystal melting layer to achieve the polishing effect. The present disclosure fixes the generation of micro-cracks and pores in traditional laser polishing process. It overcomes the shortcomings of traditional laser polishing such as large thermal influence zone, easy to generate micro-cracks and pores on the surface, etc. High efficiency and high precision submicron level fine polishing with very low material removal amount is realized.
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56.
公开(公告)号:US20200238386A1
公开(公告)日:2020-07-30
申请号:US16261982
申请日:2019-01-30
发明人: Hongqing Sun , Jinjie Shi , Andrew Ezekiel Wessman
IPC分类号: B22F7/06 , B22F3/105 , B22F5/04 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B23K26/34 , B23K26/354
摘要: A tooling assembly for mounting a plurality of components, such as compressor blades, in a powder bed additive manufacturing machine to facilitate a repair process is provided. The tooling assembly includes component fixtures configured for receiving each of the compressor blades, a mounting plate for receiving the component fixtures, and a complementary fixture defining a plurality of voids within which the compressor blades are received when the complementary fixture is mounted to the mounting plate such that less powder is required to fill the powder bed.
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公开(公告)号:US20200235229A1
公开(公告)日:2020-07-23
申请号:US16838807
申请日:2020-04-02
发明人: Takaomi Suzuki , Masaki Sakamoto
IPC分类号: H01L29/739 , H01L29/66 , H01L29/06 , H01L21/324 , H01L21/265 , B23K26/00 , B23K26/0622 , B23K26/354 , B23K26/06 , H01L27/07 , H01L21/268 , B23K26/08 , H01L21/8249 , H01L29/08
摘要: A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.
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58.
公开(公告)号:US10668568B2
公开(公告)日:2020-06-02
申请号:US15786895
申请日:2017-10-18
发明人: Bernhard Schmitt , Dominik Will , Daniel Schwab
IPC分类号: B23K26/00 , B29C45/26 , B23K26/352 , B23K26/354 , B29C45/37 , B29C33/38 , B44B5/00 , B29C59/02
摘要: A plastic component is provided that leads to an initial friction reduction with a friction partner. At least part of the surface of the plastic component, which interacts with a surface of a friction partner, is provided with a plurality of structures. The structures are composed of at least one structure type. Between two adjacent structure types, a distance is formed in the range of 10 microns to 1 mm. A width of the structure types is in the range of 10 microns to 100 microns. A height or depth of the structure types is in the range from 1 micron to 100 microns.
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公开(公告)号:US10651049B2
公开(公告)日:2020-05-12
申请号:US16055325
申请日:2018-08-06
IPC分类号: H01L21/324 , B23K26/03 , B23K26/066 , B23K26/06 , B23K26/08 , H01L21/02 , B23K26/354 , H01L21/268 , B23K26/064 , B23K26/073 , H01L21/263 , B23K103/00 , B23K101/40
摘要: A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.
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公开(公告)号:US10646963B2
公开(公告)日:2020-05-12
申请号:US15885633
申请日:2018-01-31
申请人: nLIGHT, Inc.
IPC分类号: B23K26/354 , B33Y10/00 , B23K26/064 , B33Y50/02 , B23K26/34 , B33Y30/00
摘要: A method for forming an article includes: forming a melt pool; exposing the melt pool to an optical beam having at least one beam characteristic; forming a keyhole cavity in the melt pool, the keyhole cavity having at least one keyhole cavity property; and modifying the at least one beam characteristic in response to a change in the keyhole cavity property.
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