公开(公告)号：US10284262B1

公开(公告)日：2019-05-07

申请号：US16012514

申请日：2018-06-19

Applicant: STMICROELECTRONICS, INC.

Inventor： Christophe Henri Ricard ,  Mohammad Mazooji

IPC: H04B5/00 ,  H04B5/02 ,  H04L29/08 ,  H04W4/38

Abstract: A method and near field communications (NFC) system for sensing at least one of an environmental condition or a composition of media in a proximity of the NFC system are provided. In the method and system, a first antenna irradiates an electromagnetic field during a sensor mode. A second antenna detects the electromagnetic field and outputs a voltage representative of the detected electromagnetic field. An NFC controller receives a signal representative of the voltage. The NFC controller determines at least one of the environmental condition or the composition of media based on an association stored in memory between the voltage and the at least one of the environmental condition or the composition of media.

公开(公告)号：US10276573B2

公开(公告)日：2019-04-30

申请号：US15168382

申请日：2016-05-31

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc. ,  STMicroelectronics, Inc.

Inventor： Xiuyu Cai ,  Qing Liu ,  Ruilong Xie ,  Chun-chen Yeh

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/06 ,  H01L21/308 ,  H01L21/033 ,  H01L29/78 ,  H01L29/165 ,  H01L21/84 ,  H01L27/12 ,  H01L29/10

Abstract: A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.

公开(公告)号：US10272684B2

公开(公告)日：2019-04-30

申请号：US15253601

申请日：2016-08-31

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS INTERNATIONAL N.V. ,  STMICROELECTRONICS S.R.L.

Inventor： Simon Dodd ,  David S. Hunt ,  Joseph Edward Scheffelin ,  Dana Gruenbacher ,  Stefan H. Hollinger ,  Uwe Schober ,  Peter Janouch

IPC: B41J2/14 ,  B41J2/175

Abstract: The present disclosure provides supports for microfluidic die that allow for nozzles of the microfluidic die to be on a different plane or face a different direction from electrical contacts on the same support. This includes a rigid support having electrical contacts on a different side of the rigid support with respect to a direction of ejection of the nozzles, and a semi-flexible support or semi-rigid support that allow the electrical contacts to be moved with respect to a direction of ejection of the nozzles. The semi-flexible and semi-rigid supports allow the die to be up to and beyond a 90 degree angle with respect to a plane of the electrical contacts. The different supports allow for a variety of positions of the microfluidic die with respect to a position of the electrical contacts.

公开(公告)号：US10264667B2

公开(公告)日：2019-04-16

申请号：US14310601

申请日：2014-06-20

Applicant: STMicroelectronics, Inc. ,  STMicroelectronics S.R.L. ,  STMicroelectronics International N.V.

Inventor： Simon Dodd ,  Joe Scheffelin ,  Dave Hunt ,  Steve Bush ,  Faiz Sherman

IPC: H05K1/02 ,  B41J2/175

Abstract: The present disclosure is directed to a system that is configured to eject fluid vertically away from a thermal microfluidic die for use with scented oils or other fluids. The die is coupled to a rigid planar support board that separates the die from a reservoir of the fluid. The support board includes an opening that is lined with an inert liner that protects an interior surface of the support board from the fluid. The support board includes contact to an external power supply and contacts to the die on a first surface. The die is coupled to this first surface such that the second surface remains free of electrical connections.

公开(公告)号：US10260877B2

公开(公告)日：2019-04-16

申请号：US14749118

申请日：2015-06-24

Applicant: STMicroelectronics, Inc.

Inventor： Mahesh Chowdhary ,  Sankalp Dayal

IPC: G01C19/32 ,  G01C19/5776 ,  G01P15/18

Abstract: An electronic device includes a printed circuit board (PCB) having at least one conductive trace thereon. A system on chip (SoC) is mounted on the PCB and electrically coupled to the conductive trace. A sensor chip is mounted on the PCB in a spaced apart relation with the SoC and electrically coupled to the conductive trace such that the sensor chip and SoC are electrically coupled. The sensor chip includes an accelerometer and/or a gyroscope, and a control circuit. The control circuit is configured to receive configuration data as input, acquire data from the accelerometer and/or the gyroscope. The control circuit is also configured to process the data so as to generate a context of the electronic device relative to its surroundings, the processing being performed in using a processing technique operating in accordance with the configuration data, and output the context.

公开(公告)号：US10247881B2

公开(公告)日：2019-04-02

申请号：US15491718

申请日：2017-04-19

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: H01L21/4763 ,  G02B6/132 ,  G02B6/122 ,  H01L23/522 ,  G02B6/13 ,  H01L21/768 ,  G02B6/136 ,  H01L23/532 ,  H01L21/66 ,  G02B6/12

Abstract: A sequence of processing steps presented herein is used to embed an optical signal path within an array of nanowires, using only one lithography step. Using the techniques disclosed, it is not necessary to mask electrical features while forming optical features, and vice versa. Instead, optical and electrical signal paths can be created substantially simultaneously in the same masking cycle. This is made possible by a disparity in the widths of the respective features, the optical signal paths being significantly wider than the electrical ones. Using a damascene process, the structures of disparate widths are plated with metal that over-fills narrow trenches and under-fills a wide trench. An optical cladding material can then be deposited into the trench so as to surround an optical core for light transmission.

公开(公告)号：US10242862B2

公开(公告)日：2019-03-26

申请号：US15391135

申请日：2016-12-27

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/08 ,  B08B3/12

Abstract: A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing—rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation. The multi-branch chemical dispensing unit provides a flexible, modular building block for constructing various equipment configurations that use multiple chemical treatments and/or pH neutralization steps.

公开(公告)号：US20190081079A1

公开(公告)日：2019-03-14

申请号：US16180223

申请日：2018-11-05

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Pierre Morin

IPC: H01L27/12 ,  H01L27/092 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L21/3105 ,  H01L21/308 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/84 ,  H01L29/06 ,  H01L29/10

Abstract: A tensile strained silicon layer is patterned to form a first group of fins in a first substrate area and a second group of fins in a second substrate area. The second group of fins is covered with a tensile strained material, and an anneal is performed to relax the tensile strained silicon semiconductor material in the second group of fins and produce relaxed silicon semiconductor fins in the second area. The first group of fins is covered with a mask, and silicon-germanium material is provided on the relaxed silicon semiconductor fins. Germanium from the silicon germanium material is then driven into the relaxed silicon semiconductor fins to produce compressive strained silicon-germanium semiconductor fins in the second substrate area (from which p-channel finFET devices are formed). The mask is removed to reveal tensile strained silicon semiconductor fins in the first substrate area (from which n-channel finFET devices are formed).

公开(公告)号：US20190028853A1

公开(公告)日：2019-01-24

申请号：US16137980

申请日：2018-09-21

Applicant: STMicroelectronics, Inc.

Inventor： Oleg Logvinov ,  Aidan Cully ,  David Lawrence ,  Michael Macaluso

IPC: H04W4/06 ,  H04L29/06 ,  H04L1/18 ,  H04L12/18 ,  H04W74/08 ,  H04L12/413 ,  H04B3/54 ,  H04L12/761 ,  H04L1/00

Abstract: Multicast transmissions do not allow for individual receivers to acknowledge that data was received by each receiver in the network. This is not acceptable for isochronous systems that require specific levels of QoS for each device. A multimedia communications protocol supports using multicast transmissions (one-to-many) in multimedia isochronous systems. A transmitter establishes a Multi-ACKed Multicast protocol within which a group of receiving devices can acknowledge the multicast transmission during a multi-acknowledgment period.

公开(公告)号：US10163684B2

公开(公告)日：2018-12-25

申请号：US15831761

申请日：2017-12-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMICROELECTRONICS, INC.

Inventor： Bruce Doris ,  Hong He ,  Qing Liu

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L21/02 ,  H01L21/225 ,  H01L27/12 ,  H01L29/66 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8234

Abstract: A method of making a structurally stable SiGe-on-insulator FinFET employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a SiGe fin. The silicon nitride liner blocks access of oxygen to the lower corners of the fin to facilitate fabrication of a high-concentration SiGe fin. The silicon nitride liner is effective as an oxide barrier even if its thickness is less than about 5 nm. Use of the SiN liner provides structural stability for fins that have higher germanium content, in the range of 25-55% germanium concentration.