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公开(公告)号:US20190064205A1
公开(公告)日:2019-02-28
申请号:US16116467
申请日:2018-08-29
Applicant: STMicroelectronics S.r.l.
Inventor: Alessandro TOCCHIO , Francesco RIZZINI , Carlo VALZASINA , Giacomo LANGFELDER , Cristiano Rocco MARRA
IPC: G01P15/125 , G01C19/5719 , G01P15/08
Abstract: An inertial sensor for sensing an external acceleration includes: a first and a second proof mass; a first and a second capacitor formed between first and second fixed electrodes and the first proof mass; a third and a fourth capacitor formed between third and fourth fixed electrodes and the second proof mass; a driving assembly configured to cause an antiphase oscillation of the first and second proof masses; a biasing circuit configured to bias the first and third capacitors, thus generating first variation of the oscillation frequency in a first time interval, and to bias the second and fourth capacitors, thus generating first variation of the oscillation frequency in a second time interval; a sensing assembly, configured to generate an differential output signal which is a function of a difference between a value of the oscillating frequency during the first time interval and a value of the oscillating frequency during the second time interval. Such differential output signal can be correlated to the value and direction of the external acceleration.
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622.
公开(公告)号:US10215652B2
公开(公告)日:2019-02-26
申请号:US15475924
申请日:2017-03-31
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Pagani
Abstract: A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.
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公开(公告)号:US20190049330A1
公开(公告)日:2019-02-14
申请号:US16157450
申请日:2018-10-11
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Pagani
Abstract: A pressure sensor includes a support body that includes a recess; a substrate coupled to the support body; a dielectric layer coupled between the support body and the substrate; and a pressure sensor circuit of the piezoresistive type or piezoelectric type. The pressure sensor circuit is coupled to the substrate and disposed over the recess. The pressure sensor circuit is configured to bend into the recess when the pressure sensor circuit is subjected to external pressure.
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公开(公告)号:US10205036B2
公开(公告)日:2019-02-12
申请号:US15868929
申请日:2018-01-11
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Massimo Cataldo Mazzillo , Piero Fallica , Salvatore Lombardo
IPC: H01L31/107 , H01L31/0216 , G01J1/44 , H01L27/144 , H01L31/02 , H01L27/146
Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.
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公开(公告)号:US10197795B2
公开(公告)日:2019-02-05
申请号:US15588204
申请日:2017-05-05
Applicant: STMicroelectronics S.r.l.
Inventor: Francesco Procopio , Giulio Ricotti
Abstract: A MEMS device includes a fixed supporting body forming a cavity, a mobile element suspended over the cavity, and an elastic element arranged between the fixed supporting body and the mobile element. First, second, third, and fourth piezoelectric elements are mechanically coupled to the elastic element, which has a shape symmetrical with respect to a direction. The first and second piezoelectric elements are arranged symmetrically with respect to the third and fourth piezoelectric elements, respectively. The first and fourth piezoelectric elements are configured to receive a first control signal, whereas the second and third piezoelectric elements are configured to receive a second control signal, which is in phase opposition with respect to the first control signal so that the first, second, third, and fourth piezoelectric elements deform the elastic element, with consequent rotation of the mobile element about the direction.
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公开(公告)号:US10197794B2
公开(公告)日:2019-02-05
申请号:US15603614
申请日:2017-05-24
Applicant: STMicroelectronics S.r.l.
Inventor: Sonia Costantini , Marta Carminati , Daniela Angela Luisa Gatti , Laura Maria Castoldi , Roberto Carminati
Abstract: A micro-electro-mechanical (MEMS) device is formed in a first wafer overlying and bonded to a second wafer. The first wafer includes a fixed part, a movable part, and elastic elements that elastically couple the movable part and the fixed part. The movable part further carries actuation elements configured to control a relative movement, such as a rotation, of the movable part with respect to the fixed part. The second wafer is bonded to the first wafer through projections extending from the first wafer. The projections may, for example, be formed by selectively removing part of a semiconductor layer. A composite wafer formed by the first and second wafers is cut to form many MEMS devices.
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627.
公开(公告)号:US20190035728A1
公开(公告)日:2019-01-31
申请号:US16044190
申请日:2018-07-24
Applicant: STMicroelectronics S.r.l.
Inventor: Ivan Venegoni , Francesca Milanesi , Francesco Maria Pipia , Samuele Sciarrillo , Paolo Colpani
IPC: H01L23/522 , H01L21/768 , H01L23/532
Abstract: An integrated device includes a semiconductor body and a dielectric layer bounded by a surface. A conductive region of a first metal material forms a via region extending into a hole passing through the dielectric layer, and an overlaid redistribution region which extends over the surface. At least one barrier region of a second metal material extends into the hole and surrounds the via region, and the barrier region furthermore extending over the surface. A first coating layer of a third metal material covers the top and the sides of an upper portion of the redistribution region at a distance from the surface. A second coating layer of a fourth metal material extends at a distance from the surface and covers the first coating layer, and covers laterally a lower portion of the redistribution region which is disposed on top of portions of the barrier region extending over the surface.
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628.
公开(公告)号:US20190035727A1
公开(公告)日:2019-01-31
申请号:US16044186
申请日:2018-07-24
Applicant: STMicroelectronics S.r.l.
Inventor: Francesco Maria Pipia , Ivan Venegoni , Annamaria Votta , Francesca Milanesi , Samuele Sciarrillo , Paolo Colpani
IPC: H01L23/522 , H01L21/768 , H01L23/532
Abstract: An integrated electronic device includes a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A conductive region forms a via region, extending into a hole through the frontal dielectric layer. An overlaid redistribution region extends over the frontal surface. A barrier structure includes at least a first barrier region extending into the hole and surrounding the via region. The first barrier region extends over the frontal surface. A first coating layer covers the top and the sides of the redistribution region and a second coating layer covers the first coating layer. A cavity extends between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure.
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公开(公告)号:US10186654B2
公开(公告)日:2019-01-22
申请号:US15163230
申请日:2016-05-24
Applicant: STMicroelectronics S.r.l.
Inventor: Maria Fortuna Bevilacqua , Flavio Francesco Villa , Rossana Scaldaferri , Valeria Casuscelli , Andrea Di Matteo , Dino Faralli
IPC: H01L41/09 , H01L41/053 , H01L41/22 , H01L41/113 , H01L41/047 , H02N2/18 , H01L41/187 , H01L41/25 , H01L41/29 , H01L41/332
Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.
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公开(公告)号:US10180456B2
公开(公告)日:2019-01-15
申请号:US15367271
申请日:2016-12-02
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Pagani
Abstract: A testing architecture for integrated circuits on a wafer includes at least one first circuit of a structure TEG realized in a scribe line providing separation between first and second integrated circuits. At least one pad is shared by a second circuit inside at least one of the first and second integrated circuits and the first circuit. Switching circuitry is coupled to the at least one pad and to the first and second circuits.
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