VOLTAGE REGULATOR
    662.
    发明公开
    VOLTAGE REGULATOR 审中-公开

    公开(公告)号:US20230152832A1

    公开(公告)日:2023-05-18

    申请号:US18052860

    申请日:2022-11-04

    Inventor: Jimmy FORT

    CPC classification number: G05F1/59 G05F1/575 G05F1/468

    Abstract: Provided is a voltage regulator supplying a first voltage on a first output node and comprising a first input transistor of a non-inverting stage and a second biasing transistor of the non-inverting stage. The first and second transistors are coupled in series, in this order, between the first node and a second node of application of a second reference voltage. The second transistor is being configured to be controlled by a third voltage depending on the first voltage.

    Co-integrated vertically structured capacitive element and fabrication process

    公开(公告)号:US11626365B2

    公开(公告)日:2023-04-11

    申请号:US17226324

    申请日:2021-04-09

    Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.

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