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    LASER LIGHTING HAVING SELECTIVE RESOLUTION
    63.
    发明申请
    LASER LIGHTING HAVING SELECTIVE RESOLUTION 有权

    公开(公告)号：US20220116573A1

    公开(公告)日：2022-04-14

    申请号：US17506412

    申请日：2021-10-20

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Vlad Joseph Novotny ,  Paul Rudy

    IPC: H04N9/77 ,  G02B27/01 ,  G02B26/10 ,  H04N9/31 ,  F21K9/64

    Abstract: In an example, the present invention provides an optical engine apparatus. The apparatus has a laser diode device, the laser diode device characterized by a wavelength ranging from 300 to 2000 nm or any variations thereof. In an example, the apparatus has a lens coupled to an output of the laser diode device and a scanning mirror device operably coupled to the laser diode device. In an example, the apparatus has an un-patterned phosphor plate coupled to the scanning mirror and configured with the laser device; and a spatial image formed on a portion of the un-patterned phosphor plate configured by a modulation of the laser and movement of the scanning mirror device.

    Manufacturable RGB laser diode source and system
    65.
    发明授权
    Manufacturable RGB laser diode source and system 有权

    公开(公告)号：US11139637B2

    公开(公告)日：2021-10-05

    申请号：US16844299

    申请日：2020-04-09

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

    IPC: H01S5/0234 ,  H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/22

    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

    Laser source apparatus
    66.
    发明授权
    Laser source apparatus 有权

    公开(公告)号：US11088507B1

    公开(公告)日：2021-08-10

    申请号：US16353657

    申请日：2019-03-14

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： James W. Raring ,  Paul Rudy

    IPC: H01S5/042 ,  H01S5/022 ,  H01S5/323 ,  H01S3/16 ,  H01S5/343 ,  F41H13/00 ,  H01S5/40 ,  H01S5/02208 ,  H01S5/02325 ,  H01S5/32 ,  H01S5/026 ,  H01S5/22

    Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

    Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
    67.
    发明授权
    Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material 有权

    公开(公告)号：US11088505B2

    公开(公告)日：2021-08-10

    申请号：US16876569

    申请日：2020-05-18

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

    MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING COUPLED WAVEGUIDE DEVICES
    70.
    发明申请
    MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING COUPLED WAVEGUIDE DEVICES 有权

    公开(公告)号：US20240413614A1

    公开(公告)日：2024-12-12

    申请号：US18207044

    申请日：2023-06-07

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Phillip Skahan ,  Christian Zollner

    IPC: H01S5/227 ,  H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/343

    Abstract: The present disclosure provides optical devices and methods for forming the optical devices. In some embodiments, the optical devices include active and passive regions. The active regions may include gallium and nitrogen containing epitaxial material, and the passive regions may include waveguide structures. The active and passive regions may be arranged on a carrier wafer in an end-to-end configuration. In other embodiments, the optical devices include laser devices or gain regions and dielectric waveguides. The laser devices or gain regions may include gallium and nitrogen containing epitaxial material.

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