Error Resilient Video Transmission Using Instantaneous Receiver Feedback and Channel Quality Adaptive Packet Retransmission
    61.
    发明申请
    Error Resilient Video Transmission Using Instantaneous Receiver Feedback and Channel Quality Adaptive Packet Retransmission 有权
    使用瞬时接收机反馈和信道质量自适应分组重传的弹性视频传输错误

    公开(公告)号:US20090213940A1

    公开(公告)日:2009-08-27

    申请号:US12110570

    申请日:2008-04-28

    Abstract: Systems and methods for delivering real-time video imagery to a receiver over a channel. A current video frame is captured and digitized. The digitized frame is divided into a plurality of macroblocks. For each macroblock an intra, inter or skip mode coding mode is determined. Based on instantaneous feedback received from a receiver regarding successfully received video packets for a prior video frame, a quantization parameter is set and the macroblocks are encoded in accordance with their respective selected coding mode. Synchronized error concealment is performed at both the encoder and decoder sides of the system and retransmission of lost video packets, using an adaptive retransmission scheme, are performed in accordance with the instantaneous feedback from the receiver.

    Abstract translation: 通过频道将实时视频图像传送到接收器的系统和方法。 当前的视频帧被捕获并数字化。 数字化帧被分成多个宏块。 对于每个宏块,确定帧内,帧间或跳过模式编码模式。 基于从接收机接收到的关于先前视频帧的成功接收的视频分组的瞬时反馈,设置量化参数,并且根据它们各自选择的编码模式对宏块进行编码。 在系统的编码器和解码器侧执行同步错误隐藏,并且根据来自接收机的瞬时反馈来执行使用自适应重传方案的丢失视频分组的重传。

    Data slicer with a source-degeneration structure
    62.
    发明授权
    Data slicer with a source-degeneration structure 有权
    具有源 - 退化结构的数据限幅器

    公开(公告)号:US07368956B2

    公开(公告)日:2008-05-06

    申请号:US11098494

    申请日:2005-04-05

    Inventor: Chang-Ming Chiu

    CPC classification number: H03K5/088 H03K5/003

    Abstract: A data slicer with a source-degeneration structure is described. In particular, this invention can be implemented in a FM demodulation system. It located at the end of the demodulator. The data slicer can slice a signal transmitted through air and demodulates the same with a demodulator to produce a frequency-shifted modulation (FSK) signal. The signal is a perfect square-wave and is transmitted to a base band circuit. The data slicer with a source-degeneration structure obtains the exact reference voltage. The reference voltage is not affected by noise and doesn't need the coupling capacitor, so it can reduce the difficulty of manufacture and cost. The present invention has a common-source unit with a source-degeneration resistor for producing an input signal and a reference voltage, and a comparator unit for comparing the input signal and the reference voltage and outputting a square-wave signal that corresponds to the input signal.

    Abstract translation: 描述了具有源 - 退化结构的数据限幅器。 特别地,本发明可以在FM解调系统中实现。 它位于解调器的末端。 数据限幅器可以切片通过空中传输的信号,并用解调器对其进行解调,以产生频移调制(FSK)信号。 信号是一个完美的方波,并被传输到基带电路。 具有源极退化结构的数据限幅器获得精确的参考电压。 参考电压不受噪声影响,不需要耦合电容,因此可以降低制造难度和成本。 本发明具有用于产生输入信号和参考电压的源极退化电阻的共源单元,以及用于比较输入信号和参考电压的比较器单元,并输出对应于输入的方波信号 信号。

    Method for transforming output signals of a low-noise amplifier of a wireless transceiver
    63.
    发明授权
    Method for transforming output signals of a low-noise amplifier of a wireless transceiver 有权
    用于变换无线收发器的低噪声放大器的输出信号的方法

    公开(公告)号:US07224231B2

    公开(公告)日:2007-05-29

    申请号:US10907153

    申请日:2005-03-23

    Applicant: Chia-Wei Wu

    Inventor: Chia-Wei Wu

    Abstract: A method for transforming single-ended signals outputted from a low-noise amplifier of a wireless transceiver into differential signals. The method includes: providing a transformer according to a default requirement of the wireless transceiver; transferring the single-ended signals provided by the low-noise amplifier to a first end of a primary end of the transformer, and coupling a second end of the primary end of the transformer to a power source; grounding a center tap of a secondary end of the transformer; and outputting the differential signals from two ends of the secondary end of the transformer.

    Abstract translation: 一种用于将从无线收发器的低噪声放大器输出的单端信号变换为差分信号的方法。 该方法包括:根据无线收发器的默认要求提供变压器; 将由所述低噪声放大器提供的单端信号传送到所述变压器的初级端的第一端,以及将所述变压器的所述主端的第二端耦合到电源; 将变压器次级端的中心抽头接地; 并从变压器的次级端的两端输出差分信号。

    Method and apparatus for analyzing performance of a multi-stage radio frequency amplifier
    64.
    发明授权
    Method and apparatus for analyzing performance of a multi-stage radio frequency amplifier 有权
    用于分析多级射频放大器的性能的方法和装置

    公开(公告)号:US07019594B2

    公开(公告)日:2006-03-28

    申请号:US10775198

    申请日:2004-02-11

    Applicant: Chun Hsueh Chu

    Inventor: Chun Hsueh Chu

    CPC classification number: H03F3/195

    Abstract: A method and an apparatus for analyzing performance of a multi-stage radio frequency amplifier are described. The method simplifies the multi-stage radio frequency amplifier into equivalent input parts, output parts and mid-stage parts. The mid-stage parts are temporarily unset. Therefore, the equivalent input parts and output parts will be adjusted to make best gain performance and the mid-stage parts will be the next targets for analysis. Repeating the above-mentioned methods for decomposing the circuit can systemize the method for analyzing circuits and problems in each part of the circuit may be found more quickly.

    Abstract translation: 描述用于分析多级射频放大器的性能的方法和装置。 该方法将多级射频放大器简化为等效输入部分,输出部分和中间部分。 中期部分暂时未设定。 因此,相应的输入部分和输出部分将进行调整,以获得最佳增益性能,而中间部分将成为下一个分析目标。 重复上述用于分解电路的方法可以系统化分析电路的方法,并且可以更快地发现电路的每个部分中的问题。

    AMPLIFICATION CIRCUIT
    65.
    发明申请

    公开(公告)号:US20250158580A1

    公开(公告)日:2025-05-15

    申请号:US18391681

    申请日:2023-12-21

    Abstract: An amplification circuit includes a radio-frequency input terminal, a radio-frequency output terminal, a first amplification stage circuit, a second amplification stage circuit, and a variable impedance path. The radio-frequency input terminal is used to receive a radio-frequency signal. The radio-frequency output terminal is used to output the amplified radio-frequency signal. The first amplification stage circuit is coupled to the radio-frequency input terminal and the radio-frequency output terminal. The second amplification stage circuit is coupled to the radio-frequency input terminal and the radio-frequency output terminal. The variable impedance path is coupled to the first amplification stage circuit and the second amplification stage circuit. When the second amplification stage circuit is enabled, the variable impedance path has a low impedance. When the second amplification stage circuit is disabled, the variable impedance path has a high impedance.

    COUPLER STRUCTURE AND RELATED RADIO FREQUENCY CIRCUIT

    公开(公告)号:US20250149768A1

    公开(公告)日:2025-05-08

    申请号:US18391697

    申请日:2023-12-21

    Inventor: Chia-Jung Yeh

    Abstract: A coupler structure includes a main signal line, a first coupling line, a second coupling line and a spacer element. The main signal line is located on a first plane, the first coupling line is located on a second plane, and the second coupling line is located on a third plane, wherein the second plane and the third plane are both in parallel with the first plane, and the second plane and the third plane are both different from the first plane. The spacer element is connected to the main signal line. The projection of the spacer element on the first plane is located between the projection of the first coupling line on the first plane and the projection of the second coupling line on the first plane. The main signal line, the first coupling line and the second coupling line extend along a virtual line.

    AMPLIFY DEVICE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20250105804A1

    公开(公告)日:2025-03-27

    申请号:US18539131

    申请日:2023-12-13

    Inventor: Po-Yen Ho

    Abstract: An amplify device and a semiconductor device are provided in the disclosure. The amplify device includes an amplify unit, a radio frequency signal combination circuit, a first conductive wire and a second conductive wire. The first conductive wire is coupled between an output end of the amplify unit and a first input end of the radio frequency signal combination circuit. The second conductive wire is coupled between the output end of the amplify unit and a second input end of the radio frequency signal combination circuit. Wherein, a length of the first conductive wire is different from a length of the second conductive wire.

    Radio frequency amplifier and bias circuit

    公开(公告)号:US12224720B2

    公开(公告)日:2025-02-11

    申请号:US17474055

    申请日:2021-09-14

    Abstract: A radio frequency (RF) amplifier and a bias circuit are provided. The RF amplifier includes an amplifier, a first inductive-capacitive resonance circuit, and a first bias circuit. The amplifier includes an input terminal configured to receive an incoming RF signal through a first RF path. The first inductive-capacitive resonance circuit includes a first terminal coupled to a first reference voltage. A second terminal of the first inductive-capacitive resonance circuit is coupled to the first RF path. In response to the first reference voltage being at a first reference level, the RF amplifier is enabled; in response to the first reference voltage being at a second reference level, the RF amplifier is disabled. The first bias circuit includes a first terminal configured to be coupled to the first reference voltage and a second terminal coupled to the input terminal of the amplifier to provide a first direct current (DC) component.

    Semiconductor device for enhancing quality factor of inductor and method of forming the same

    公开(公告)号:US12176385B2

    公开(公告)日:2024-12-24

    申请号:US17990733

    申请日:2022-11-20

    Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

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