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    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    62.
    发明申请
    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    相变存储器件及其制造方法

    公开(公告)号：US20080135825A1

    公开(公告)日：2008-06-12

    申请号：US11936503

    申请日：2007-11-07

    申请人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

    发明人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

    IPC分类号： H01L47/00 ,  H01L21/8239

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1666

    摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。 下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。

    Multibit phase change memory device and method of driving the same
    63.
    发明授权
    Multibit phase change memory device and method of driving the same 有权
    多位相变存储器件及其驱动方法

    公开(公告)号：US07233017B2

    公开(公告)日：2007-06-19

    申请号：US11082054

    申请日：2005-03-15

    申请人： Sung Min Yoon ,  Sangouk Ryu ,  Woong Chul Shin ,  Nam Yeal Lee ,  Byoung Gon Yu

    发明人： Sung Min Yoon ,  Sangouk Ryu ,  Woong Chul Shin ,  Nam Yeal Lee ,  Byoung Gon Yu

    IPC分类号： H01L47/00

    CPC分类号： G11C11/5692 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.

    摘要翻译： 一种多位相变存储器件，其被构造为使得多个单个相变存储器件在平面区域或垂直方向上对准，并且提供其驱动方法。 多位相变存储器件包括：相变材料层，具有与加热电极接触的多个接触部分，并且具有多个有源区域，每个有源区域形成单位相变存储器件。 相变材料层可以由多个有源区域以多个阵列排列的一个材料层构成。 或者，相变材料层可以由多个相变材料层构成，其中一个或多个有源区域分别对齐在一个阵列中。 多个相变材料层可以设置在平面区域的相同水平面上，或者多个相变材料层可以分别设置在相同垂直线上的不同平面区域上。

    Data bus system for micro controller
    64.
    发明授权
    Data bus system for micro controller 有权
    微控制器数据总线系统

    公开(公告)号：US07133954B2

    公开(公告)日：2006-11-07

    申请号：US10625126

    申请日：2003-07-22

    申请人： Yil-suk Yang ,  Jong-dae Kim ,  Tae-moon Roh ,  Dae-woo Lee ,  Sang-gi Kim ,  Il-yong Park ,  Byoung-gon Yu

    发明人： Yil-suk Yang ,  Jong-dae Kim ,  Tae-moon Roh ,  Dae-woo Lee ,  Sang-gi Kim ,  Il-yong Park ,  Byoung-gon Yu

    IPC分类号： G06F13/00 ,  G06F13/40

    CPC分类号： G06F13/4217 ,  Y02D10/14 ,  Y02D10/151

    摘要： Provided is a data bus system for a micro controller which has an input/output (I/O) unit, a central processing unit (CPU), an internal memory unit, and a peripheral circuitry. The data bus system includes an external access bus used when data is output from the CPU or data is input to the I/O unit or the internal memory unit; an internal access bus used when data is input to the CPU, data is output from the I/O unit or the internal memory unit, or data is input to or output from the peripheral circuitry; and an internal memory test bus used when data is output from the internal memory unit and input to the I/O unit.

    摘要翻译： 提供了一种用于微控制器的数据总线系统，其具有输入/输出（I / O）单元，中央处理单元（CPU），内部存储器单元和外围电路。 数据总线系统包括当从CPU输出数据或将数据输入到I / O单元或内部存储器单元时使用的外部存取总线; 当数据输入到CPU时使用的内部访问总线，数据从I / O单元或内部存储器单元输出，或者数据被输入到外围电路或从外围电路输出; 以及当从内部存储器单元输出数据并输入到I / O单元时使用的内部存储器测试总线。

    Low power and high density source driver and current driven active matrix organic electroluminescent device having the same
    66.
    发明申请
    Low power and high density source driver and current driven active matrix organic electroluminescent device having the same 有权
    具有相同功能的低功率和高密度源极驱动器和电流驱动的有源矩阵有机电致发光器件

    公开(公告)号：US20050007315A1

    公开(公告)日：2005-01-13

    申请号：US10739735

    申请日：2003-12-17

    申请人： Yil-Suk Yang ,  Byung-Doo Kim ,  Jong-Dae Kim ,  Tae-Moon Roh ,  Dae-Woo Lee ,  Byoung-Gon Yu ,  Il-Yong Park ,  Sung-Ku Kwon

    发明人： Yil-Suk Yang ,  Byung-Doo Kim ,  Jong-Dae Kim ,  Tae-Moon Roh ,  Dae-Woo Lee ,  Byoung-Gon Yu ,  Il-Yong Park ,  Sung-Ku Kwon

    IPC分类号： G09G3/30 ,  G09G3/32

    CPC分类号： G09G3/3283 ,  G09G3/3241 ,  G09G2310/027 ,  G09G2330/021

    摘要： Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel. The source driver includes: a shift register for generating an enable signal for storing data; a data latch circuit for storing digital data inputted from an exterior; a line latch circuit for sequentially storing the data in response to the enable signal and outputting the stored data in parallel at one time in response to a load signal; a current type digital-to-analog converter for converting the digital data outputted from the line latch circuit into an analog signal, the analog signal being outputted in a form of a current signal; and a high voltage shield circuit for transferring the output of the current digital-to-analog converter to source lines of an external panel and for shielding internal circuits from a high voltage of the panel. The shift register, the data latch circuit, the line latch circuit, the current type digital-to-analog converter and the high voltage shield circuit are driven at a normal voltage.

    摘要翻译： 公开了一种低功率和高密度源极驱动器以及具有这种驱动器的电流驱动有源矩阵有机电致发光器件，其中所有元件都工作在正常电压，并且源极驱动器的所有电路都屏蔽了面板的高电压。 源极驱动器包括：移位寄存器，用于产生用于存储数据的使能信号; 数据锁存电路，用于存储从外部输入的数字数据; 行锁存电路，用于响应于使能信号顺序地存储数据并响应于负载信号一次并行地输出存储的数据; 用于将从线路锁存电路输出的数字数据转换为模拟信号的电流型数模转换器，模拟信号以电流信号的形式输出; 以及用于将当前数模转换器的输出传送到外部面板的源极线并用于屏蔽内部电路与面板的高电压的高压屏蔽电路。 移位寄存器，数据锁存电路，线路锁存电路，电流型数模转换器和高压屏蔽电路以正常电压驱动。

    Nonvolatile ferroelectric memory using selective reference cell
    67.
    发明授权
    Nonvolatile ferroelectric memory using selective reference cell 有权
    使用选择性参考电池的非易失性铁电存储器

    公开(公告)号：US6147896A

    公开(公告)日：2000-11-14

    申请号：US429752

    申请日：1999-10-28

    申请人： Shi-Ho Kim ,  Bo-Woo Kim ,  Byoung-Gon Yu ,  Won-Jae Lee

    发明人： Shi-Ho Kim ,  Bo-Woo Kim ,  Byoung-Gon Yu ,  Won-Jae Lee

    IPC分类号： G11C7/06 ,  G11C11/22

    CPC分类号： G11C11/22

    摘要： A nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend lifetime of memory. A reference cell of the memory is activated to provide a reference voltage to a sense amplifier only when the sense amplifier needs the reference voltage. The memory comprises a plurality of cells arranged in a matrix form and including memory cells and reference cells, and a plurality of sense amplifiers arranged in a row of the matrix, in which each sense amplifier compares voltages induced from a reference cell and a selected memory cell to read information stored in the selected memory cell, and in which each reference cell is activated only when both a selection signal from a column address and a word line connected to said reference cell are enabled.

    摘要翻译： 一种非易失性铁电存储器，其减少参考单元的周期数以延长存储器的使用寿命。 仅当感测放大器需要参考电压时，激活存储器的参考单元才能向读出放大器提供参考电压。 存储器包括以矩阵形式布置并且包括存储器单元和参考单元的多个单元以及布置在矩阵的一行中的多个读出放大器，其中每个读出放大器将从参考单元引起的电压和所选择的存储器进行比较 单元读取存储在所选择的存储器单元中的信息，并且其中每个参考单元仅当来自列地址的选择信号和连接到所述参考单元的字线都被使能时被激活。

    Active matrix organic light emitting diode
    69.
    发明授权
    Active matrix organic light emitting diode 有权
    有源矩阵有机发光二极管

    公开(公告)号：US08476622B2

    公开(公告)日：2013-07-02

    申请号：US13343384

    申请日：2012-01-04

    申请人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

    发明人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/20 ,  H01L33/00 ,  H01L29/201

    CPC分类号： H01L51/5284 ,  H01L27/1218 ,  H01L27/322 ,  H01L27/326 ,  H01L29/78633 ,  H01L29/7869

    摘要： Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

    摘要翻译： 公开了有源矩阵有机发光二极管及其制造方法。 有源矩阵有机发光二极管包括：基板; 形成在基板的一部分上方的黑色矩阵; 形成在黑矩阵上方的至少一个薄膜晶体管; 形成为完全覆盖所述至少一个薄膜晶体管的钝化膜; 形成在钝化膜上方的平坦化层; 形成在所述平坦化层的与形成有所述至少一个薄膜晶体管的位置相反的上方的滤色器; 以及形成在滤色器上方的有机发光二极管。

    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
    70.
    发明授权
    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
    使用相变存储器件的非易失性可编程开关器件及其制造方法

    公开(公告)号：US08445887B2

    公开(公告)日：2013-05-21

    申请号：US12428628

    申请日：2009-04-23

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1226 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

    摘要翻译： 提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。 开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有 与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属 电极层和设置成填充通孔的第二金属电极层。 开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。