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公开(公告)号：US06486050B1
公开(公告)日：2002-11-26
申请号：US10159302
申请日：2002-05-31
Applicant: Ching-ting Lee
Inventor： Ching-ting Lee
IPC: H01L2128
CPC classification number: H01L21/28575 , H01L21/246
Abstract: A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.
Abstract translation: 公开了一种用于制造III族氮化物半导体器件的方法。 该方法采用氧化和硫化处理来降低金属和p型III族氮化物半导体之间的比接触电阻。 该方法包括使用（NH4）2Sx溶液对p型III族氮化物半导体进行表面处理以从其表面去除天然氧化物; 蒸发金属层到表面处理的p型III族氮化物半导体上; 然后通过热合金处理合金加工金属和p型III族氮化物半导体。 该方法还可以包括在硫化处理之前的预氧化步骤。 以这种方式，可以在金属层和p型III族氮化物半导体之间形成欧姆接触。
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公开(公告)号：USD414924S
公开(公告)日：1999-10-12
申请号：US92230
申请日：1998-08-14
Applicant: Ching Ting Wang
Designer： Ching Ting Wang
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公开(公告)号：USD346148S
公开(公告)日：1994-04-19
申请号：US005691
申请日：1993-03-09
Applicant: Ching-Ting Chen
Designer： Ching-Ting Chen
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公开(公告)号：US10105768B2
公开(公告)日：2018-10-23
申请号：US15201936
申请日：2016-07-05
Applicant: Ching-Ting Chen
Inventor： Ching-Ting Chen
Abstract: A cutter holder has a body and a damping assembly. The damping assembly is contained inside the body. The damping assembly has a central damping pole and six auxiliary damping poles. The six auxiliary damping poles are arranged around the central damping pole. The body has a specific weight. The central damping pole has a specific weight larger than the specific weight of the body. Each one of the six auxiliary damping poles has a specific weight larger than the specific weight of the body. The damping assembly is utilized to reduce vibrations caused by machining.
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公开(公告)号：US20170021468A1
公开(公告)日：2017-01-26
申请号：US14808218
申请日：2015-07-24
Applicant: Ching-Ting Chen
Inventor： Ching-Ting Chen
CPC classification number: B23Q11/1023 , B23B29/046 , B23B29/20 , B23B2250/12
Abstract: An adaptor has a conjunction section and an abutting portion; wherein the abutting portion is axially connected to the conjunction section. The conjunction section has an external surface, a conduction recess, and an inlet hole. The conduction recess is defined in the external surface of the conjunction section and has a bottom face. The inlet hole is defined through the bottom face. The abutting portion has a cutter holder through hole defined through the abutting portion to assemble a cutter holder. The adaptor can be applied on a tool magazine, and the tool magazine has a rotary changer that supplies cutting fluid.
Abstract translation: 适配器具有连接部分和邻接部分; 其中所述抵接部分轴向连接到所述连接部分。 连接部分具有外表面，导电凹部和入口孔。 导电凹槽限定在连接部分的外表面中并具有底面。 入口孔通过底面定义。 抵接部具有通过邻接部限定的切割器保持架通孔，以组装刀架。 适配器可以应用在刀库上，刀库具有提供切削液的旋转变换器。
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Patent Agency Ranking
66.发明申请Photovoltaic Device Including a CZTS Absorber Layer and Method of Manufacturing the Same 审中-公开包括CZTS吸收层的光伏器件及其制造方法公开(公告)号：US20130074911A1
公开(公告)日：2013-03-28
申请号：US13241248
申请日：2011-09-23
Applicant: Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
Inventor： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC: H01L31/0296 , H01L31/18
CPC classification number: H01L31/0326 , H01L31/072 , Y02E10/50
Abstract: A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0
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67.发明申请Ink composition, Chalcogenide Semiconductor Film, Photovoltaic Device and Methods for Forming the same 审中-公开墨水组成，硫族化物半导体膜，光伏器件及其形成方法公开(公告)号：US20120282730A1
公开(公告)日：2012-11-08
申请号：US13437935
申请日：2012-04-03
Applicant: Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
Inventor： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
IPC: H01L31/18 , H01B1/02 , H01L21/368 , B82Y40/00 , B82Y30/00
CPC classification number: C09D11/52 , H01L21/02568 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L31/0326 , H01L31/072 , H01L31/1828 , Y02E10/543 , Y02P70/521
Abstract: An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material.
Abstract translation: 油墨组合物包括溶剂体系，多种金属硫族化物纳米颗粒，金属离子和金属络合离子中的至少一种和钠源。 金属离子和金属络合离子中的至少一种分布在金属硫族化物纳米颗粒的表面上，并适于将金属硫族化物纳米颗粒分散在溶剂体系中。 钠源分散在溶剂体系中和/或包含在至少一种金属硫族化物纳米颗粒，金属离子和金属络合物离子中。 金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自由元素周期表第I族，第II族，第III族，第IV族元素和钠组成的组，并且包括硫族化物半导体的所有金属元素 材料。
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68.发明申请公开(公告)号：US20120282721A1
公开(公告)日：2012-11-08
申请号：US13234161
申请日：2011-09-16
Applicant: Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
Inventor： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
CPC classification number: C09D11/52 , H01L31/0322 , H01L31/0324 , H01L31/0326 , H01L31/0749 , Y02E10/541
Abstract: A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
Abstract translation: 公开了一种硫族化物半导体膜的形成方法和使用该硫族化物半导体膜的光电器件。 该方法包括以下步骤：涂覆前体溶液以在基底上形成层并退火该层以形成硫族化物半导体膜。 前体溶液包括溶剂，金属硫族化物纳米颗粒和分布在金属硫族化物纳米颗粒的表面上的金属离子和金属络合物离子中的至少一种。 金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自周期表第I族，第II族，第III族和第IV族元素组成的组，并包括硫族化物半导体材料的所有金属元素。
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公开(公告)号：US20120279420A1
公开(公告)日：2012-11-08
申请号：US13234158
申请日：2011-09-16
Applicant: Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
Inventor： Yueh-Chun Liao , Feng-Yu Yang , Ching Ting
CPC classification number: C09D11/52 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02628 , H01L31/0326 , Y02E10/50
Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
Abstract translation: 公开了一种用于形成硫族化物半导体膜的油墨组合物及其形成方法。 油墨组合物包括溶剂，多种金属硫族化物纳米颗粒和选自金属离子和金属络合离子的至少一种。 金属离子和/或复合离子分布在金属硫族化物纳米颗粒的表面上，并适于将金属硫族化物纳米颗粒分散在溶剂中。 金属硫族化物纳米颗粒，金属离子和金属络合离子的金属选自周期表第I族，第II族，第III族和第IV族元素组成的组，并包括硫族化物半导体材料的所有金属元素。
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70.发明申请LOW CALCIUM CEMENTITIOUS MATERIAL AND METHOD OF MANUFACTURING LOW CALCIUM CEMENT 有权低钙质量材料及制造低钙水泥的方法公开(公告)号：US20120152152A1
公开(公告)日：2012-06-21
申请号：US13163640
申请日：2011-06-17
Applicant: Samuel Yin , Ching-Ting Yang , Yuan-Kai Li
Inventor： Samuel Yin , Ching-Ting Yang , Yuan-Kai Li
CPC classification number: C04B28/008 , C04B2103/10 , Y02P40/165 , Y02W30/92 , C04B12/04 , C04B14/303 , C04B18/08 , C04B22/062 , C04B22/064 , C04B22/085 , C04B22/10 , C04B22/126 , C04B22/142 , C04B22/16 , C04B24/122 , C04B24/383 , C04B22/149
Abstract: A low-calcium-cementitious material having a calcium oxide content less than or equal to 10 wt % which is processed at room temperature into a low calcium cement mainly composed of mullite and a method manufacturing of the low calcium cement are provided. The low-calcium-cementitious material includes low calcium fly ash, an alkaline agent, and a congealing agent, wherein the calcium oxide content of the low-calcium-cementitious material is less than or equal to 10 wt %. The low calcium fly ash has a calcium oxide content less than or equal to 10 wt %. The low calcium cement manufacturing method includes providing a low calcium fly ash having a calcium oxide content less than or equal to 10 wt %; providing an alkaline agent; providing a congealing agent; and mixing the low-calcium-content fly ash, the alkaline agent, and the congealing agent and standing the mixture at room temperature to form a low calcium cement.
Abstract translation: 本发明提供一种氧化钙含量小于或等于10重量％的低钙水泥材料，其在室温下被加工成主要由莫来石组成的低钙水泥和低钙水泥的制造方法。 低钙水泥材料包括低钙粉煤灰，碱剂和凝结剂，其中低钙水泥质材料的氧化钙含量小于或等于10重量％。 低钙粉煤灰的氧化钙含量小于等于10重量％。 低钙水泥制造方法包括提供氧化钙含量小于或等于10重量％的低钙飞灰; 提供碱性剂; 提供凝结剂; 并混合低钙含量的飞灰，碱剂和凝结剂，并在室温下静置混合物，形成低钙水泥。
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