公开(公告)号：US20090261314A1

公开(公告)日：2009-10-22

申请号：US12232745

申请日：2008-09-23

申请人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

发明人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

IPC分类号： H01L45/00

CPC分类号： H01L27/249 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.

摘要翻译： 提供了可以被配置为堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。 提供至少一个第一电极和至少一个第二电极。 所述至少一个第二电极可以穿过所述至少一个第一电极。 至少一个数据存储层可以在至少一个第一电极和至少一个第二电极之间的交叉点处。 所述至少一个第一电极和所述至少一个第二电极中的任何一个可以包括连接到所述至少一个数据存储层的至少一个结二极管。

公开(公告)号：US20090244980A1

公开(公告)日：2009-10-01

申请号：US12382790

申请日：2009-03-24

申请人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

发明人： Kwang-soo Seol ,  Young-gu Jin ,  Yoon-dong Park

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C16/3409 ,  G11C16/344 ,  G11C16/3454

摘要： Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.

摘要翻译： 提供一种用于减少电荷的横向移动的方法和装置。 该方法可以包括通过对至少一个存储器单元施加预编程电压以使得具有比所述至少一个擦除状态存储器单元更窄的阈值电压分布来对处于擦除状态的至少一个存储器单元进行预编程，以及 使用负的有效验证电压来验证预编程存储器单元是否处于预编程状态。

公开(公告)号：US20090244514A1

公开(公告)日：2009-10-01

申请号：US12222208

申请日：2008-08-05

申请人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

发明人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

IPC分类号： G01C3/08

CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

公开(公告)号：US20090208630A1

公开(公告)日：2009-08-20

申请号：US12071335

申请日：2008-02-20

申请人： Young-Soo Koh ,  Yong-Dong Park

发明人： Young-Soo Koh ,  Yong-Dong Park

IPC分类号： A23G9/20 ,  A23G9/22 ,  A23G9/04

CPC分类号： A23G9/04 ,  A23C2260/152 ,  A23G9/20 ,  A23G9/22

摘要： The present invention relates to a spout pouch ice cream and frozen yogurt manufacturing method and a device capable of injecting ice cream after an overrun process through a narrow drinking tube of the spout pouch. In accordance with the present invention, the ice cream or the frozen yogurt can be injected into the inner diameter (8 to 9 mm) of the drinking tube of the spout pouch. Accordingly, it is possible to manufacture the spout pouch type of ice cream or frozen yogurt that can have the advantages of the spout pouch and enjoy the natural taste of ice cream or frozen yogurt.

摘要翻译： 本发明涉及喷口袋冰淇淋和冷冻酸奶制造方法以及能够通过喷口袋的狭窄饮用管道在超速加工之后注入冰淇淋的装置。 根据本发明，冰淇淋或冷冻酸奶可以注射到出口袋的饮用管的内径（8至9mm）内。 因此，可以制造可以具有喷口袋的优点的冰淇淋或冷冻酸奶的吐出袋型，并享受冰淇淋或冷冻酸奶的天然味道。

公开(公告)号：US20090207643A1

公开(公告)日：2009-08-20

申请号：US12222504

申请日：2008-08-11

申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

IPC分类号： G11C19/02

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  Y10S977/933

摘要： Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

摘要翻译： 提供使用磁畴壁移动的数据存储装置及其操作方法。 数据存储装置包括具有验证区域的磁迹。 在验证区域内，交替排列第一和第二磁畴。 第一磁畴对应于第一数据，第二磁畴对应于第二数据。 验证传感器布置在验证区域的末端。 电流施加元件被配置为向磁道施加一个或多个脉冲电流。 第一计数器连接到验证传感器并且被配置为对通过验证传感器的磁畴的数量进行计数。

公开(公告)号：US20090190397A1

公开(公告)日：2009-07-30

申请号：US12232138

申请日：2008-09-11

申请人： Kyoung Lae Cho ,  Donghun Yu ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim ,  Heeseok Eun

发明人： Kyoung Lae Cho ,  Donghun Yu ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim ,  Heeseok Eun

IPC分类号： G11C16/06 ,  G11C16/00 ,  G11C7/00

CPC分类号： G11C11/5642 ,  G11C16/3418 ,  G11C29/00

摘要： A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.

摘要翻译： 提供存储器件和存储器数据读取方法。 存储器件可以包括：多位单元阵列; 编程单元，其将N个数据页存储在多位单元阵列中的存储器页面中; 以及控制单元，其将N个数据页划分为第一组和第二组，从存储器页面读取第一组的数据，并且基于读取的数据确定从存储器页面读取第二组的数据的方案 第一组。

公开(公告)号：US20090185417A1

公开(公告)日：2009-07-23

申请号：US12213944

申请日：2008-06-26

申请人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

发明人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C29/00 ,  G11C2216/14

摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

摘要翻译： 提供了存储器编程设备和/或方法。 存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。 数据存储单元可以被配置为存储数据页。 第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。 索引存储单元可以被配置为存储所生成的索引信息。 编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。 第一计数单元可以将生成的索引信息发送到编程单元。 存储器编程装置可以监视存储器单元中阈值电压的分布状态。

公开(公告)号：US20090184360A1

公开(公告)日：2009-07-23

申请号：US12285403

申请日：2008-10-03

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。

公开(公告)号：US20090109761A1

公开(公告)日：2009-04-30

申请号：US12076310

申请日：2008-03-17

申请人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

IPC分类号： G11C16/20

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/10

摘要： Provided is a method of operating a three-dimensional nonvolatile memory device which may increase the reliability and efficiency of the three-dimensional nonvolatile memory device. The method of operating a nonvolatile memory device may include: resetting the nonvolatile memory device by injecting charges into charge storage layers of a plurality of memory cells of a block; and setting the nonvolatile memory device by removing at least some of the charges injected into the charge storage layers of one or more memory cells selected from among the plurality of memory cells.

摘要翻译： 提供了一种操作三维非易失性存储器件的方法，其可以增加三维非易失性存储器件的可靠性和效率。 操作非易失性存储器件的方法可以包括：通过向块的多个存储单元的电荷存储层注入电荷来复位非易失性存储器件; 以及通过去除从多个存储单元中选择的一个或多个存储单元的电荷存储层中注入的电荷中的至少一些电荷来设置非易失性存储器件。

公开(公告)号：US07514325B2

公开(公告)日：2009-04-07

申请号：US11505936

申请日：2006-08-18

申请人： Suk-Pil Kim ,  Jae-Woong Hyun ,  Yoon-Dong Park ,  Won-Joo Kim ,  Dong-Gun Park ,  Choong-Ho Lee

发明人： Suk-Pil Kim ,  Jae-Woong Hyun ,  Yoon-Dong Park ,  Won-Joo Kim ,  Dong-Gun Park ,  Choong-Ho Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L29/42392 ,  H01L29/66795

摘要： Example embodiments of the present invention relate to a semiconductor device and methods of fabricating the same. Other example embodiments of the present invention relate to a fin-field effect transistor (Fin-FET) having a fin-type channel region and methods of fabricating the same. A Fin-FET having a gate all around (GAA) structure that may use an entire area around a fin as a channel region is provided. The Fin-FET having the GAA structure includes a semiconductor substrate having a body, a pair of support pillars and a fin. The pair of support pillars may protrude from the body. A fin may be spaced apart from the body and may have ends connected to and supported by the pair of support pillars. A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate. A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.

摘要翻译： 本发明的示例性实施例涉及一种半导体器件及其制造方法。 本发明的其它示例性实施例涉及一种具有鳍型沟道区的鳍式场效应晶体管（Fin-FET）及其制造方法。 提供了可以使用围绕鳍片的整个区域作为沟道区域的具有栅极全（GAA）结构的鳍FET。 具有GAA结构的Fin-FET包括具有主体，一对支撑柱和鳍的半导体衬底。 一对支柱可能从身体突出。 翅片可以与主体间隔开，并且可以具有连接到一对支撑柱并由其支撑的端部。 栅电极可围绕半导体衬底的鳍的至少一部分。 栅电极可以与半导体衬底绝缘。 栅极绝缘层可以插入在半导体衬底的栅电极和鳍之间。