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    Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
    61.
    发明申请
    Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) 失效
    拉伸应变SiGe绝缘体上的应变Si MOSFET（SGOI）

    公开(公告)号：US20060001088A1

    公开(公告)日：2006-01-05

    申请号：US10883443

    申请日：2004-07-01

    申请人： Kevin Chan ,  Jack Chu ,  Kern Rim ,  Leathen Shi

    发明人： Kevin Chan ,  Jack Chu ,  Kern Rim ,  Leathen Shi

    IPC分类号： H01L21/00 ,  H01L31/0392

    CPC分类号： H01L29/78687 ,  H01L21/2007 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/78603

    摘要： A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate comprising a tensile-strained SiGe alloy layer located atop an insulating layer; and a strained Si layer atop the tensile-strained SiGe alloy layer. The present invention also provides a method of forming the tensile-strained SGOI substrate as well as the heterostructure described above. The method of the present invention decouples the preference for high strain in the strained Si layer and the Ge content in the underlying layer by providing a tensile-strained SiGe alloy layer directly atop on an insulating layer. Specifically, the method includes forming a first multilayered structure comprising at least a tensile-strained SiGe alloy layer located above a relaxed SiGe alloy layer, wherein the tensile-strained SiGe alloy contains a lower Ge content than the relaxed SiGe alloy layer; bonding the first multilayered structure to an insulating layer of a second multilayered structure on a surface opposite the relaxed SiGe alloy layer; and removing the relaxed SiGe alloy layer.

    摘要翻译： 提供了用作形成高性能金属氧化物半导体场效应晶体管（MOSFET）器件的模板的半导体结构。 更具体地，本发明提供一种包括绝缘体上硅衬底的结构，其包括位于绝缘层顶部的拉伸应变SiGe合金层; 以及拉伸应变SiGe合金层顶部的应变Si层。 本发明还提供了形成拉伸应变SGOI基板以及上述异质结构的方法。 本发明的方法通过在绝缘层上直接提供拉伸应变SiGe合金层来分离应变Si层中的高应变和下层中的Ge含量的偏好。 具体地说，该方法包括形成至少包含位于松弛SiGe合金层上方的拉伸应变SiGe合金层的第一多层结构，其中拉伸应变SiGe合金含有比松弛SiGe合金层低的Ge含量; 将第一多层结构结合到与松弛SiGe合金层相对的表面上的第二多层结构的绝缘层; 并去除松弛的SiGe合金层。

    ULTRA HIGH-SPEED SI/SIGE MODULATION-DOPED FIELD EFFECT TRANSISTORS ON ULTRA THIN SOI/SGOI SUBSTRATE
    62.
    发明申请
    ULTRA HIGH-SPEED SI/SIGE MODULATION-DOPED FIELD EFFECT TRANSISTORS ON ULTRA THIN SOI/SGOI SUBSTRATE 有权
    超薄SOI / SGOI基板上的超高速SI / SIGE调制场效应晶体管

    公开(公告)号：US20050045905A1

    公开(公告)日：2005-03-03

    申请号：US10652400

    申请日：2003-08-29

    申请人： Jack Chu ,  Qiqing Ouyang

    发明人： Jack Chu ,  Qiqing Ouyang

    IPC分类号： H01L21/335 ,  H01L29/10 ,  H01L29/778 ,  H01L29/786 ,  H01L29/24

    CPC分类号： H01L29/1054 ,  H01L29/78687

    摘要： A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.

    摘要翻译： 基于硅和硅锗的半导体MODFET器件的设计与制造方法。 MODFET设计包括高移动性层结构，能够实现超高速，低噪声，适用于各种通信应用，包括射频，微波，亚毫米波和毫米波。 外延场效应晶体管层结构包括用于高迁移率应变n沟道和p沟道晶体管的关键（垂直和横向）器件缩放和层结构设计，其包含硅和硅锗层，以在超超导体上形成最佳调制掺杂异质结构 薄的SOI或SGOI衬底，能够实现大大提高射频性能。

    Methods and apparatus for treatment of aneurysmal tissue
    63.
    发明申请
    Methods and apparatus for treatment of aneurysmal tissue 审中-公开
    用于治疗动脉瘤组织的方法和装置

    公开(公告)号：US20050043786A1

    公开(公告)日：2005-02-24

    申请号：US10643649

    申请日：2003-08-18

    申请人： Jack Chu ,  Scott Doig ,  David Brin

    发明人： Jack Chu ,  Scott Doig ,  David Brin

    IPC分类号： A61F2/00 ,  A61F2/06 ,  A61F2/88

    CPC分类号： A61F2/88 ,  A61F2250/0067

    摘要： Methods and apparatus for aiding aneurysm repair are provided. Such apparatus is constructed to support or bolster the aneurysmal site initially, while contracting if the aneurysmal site shrinks or contracts. The apparatus also supplies a pharmaceutical agent to aid in healing the surrounding aneurysmal tissue. The apparatus may comprise a drug eluting polymer or may have a passive coating which can be selectively deployed by adding an activation agent after deployment. The device can be used alone or in conjunction with a AAA stent graft that isolates the aneurysmal sac from the vascular system.

    摘要翻译： 提供了辅助动脉瘤修复的方法和装置。 这种装置被构造成最初支撑或支撑动脉瘤部位，同时如果动脉瘤部位缩小或收缩则承包。 该装置还提供药剂以帮助愈合周围的动脉瘤组织。 该装置可以包括药物洗脱聚合物或可以具有被动涂层，其可以在部署之后通过添加活化剂来选择性地部署。 该装置可以单独使用或与用于将动脉瘤囊与血管系统隔离的AAA支架移植物结合使用。

    Adjustable wheel structure
    64.
    发明授权
    Adjustable wheel structure 失效
    可调节车轮结构

    公开(公告)号：US4918783A

    公开(公告)日：1990-04-24

    申请号：US352449

    申请日：1989-05-16

    申请人： Jack Chu

    发明人： Jack Chu

    IPC分类号： B60B33/04

    CPC分类号： B60B33/04 ,  Y10T16/182 ,  Y10T16/193

    摘要： An improved adjustable wheel structure mainly adapted for use in a trailing vehicle on which a yacht, boat or motorcycle can be mounted for transportation; the present wheel structure is provided with a special nut member having its inner surface half threaded and half smoothed, and the nut member is able to be adjusted forward or backward so that the threaded inner surface thereof can be selectively engaged with a vertically disposed adjusting screw rod which has a smaller diameter than the central through hole of the slidable nut member so that the wheel structure can be smoothly adjusted in height; as the threaded side of the nut member is adjusted to disengage from the screw rod with the smoothed side thereof in contact with the adjusting screw rod, the wheel structure can be adjusted quickly rather than in stepwise manner.

    摘要翻译： 一种改进的可调节车轮结构，主要适用于可以安装游艇，船或摩托车运输的尾部车辆; 本车轮结构具有内表面为半螺纹且半平的特殊螺母构件，并且螺母构件能够向前或向后调节，使得其螺纹内表面可选择性地与竖直设置的调节螺钉 杆的直径小于可滑动螺母构件的中心通孔，使得轮结构能够在高度上平稳地调节; 由于螺母构件的螺纹侧被调节成与螺杆脱离，其平滑的侧面与调节螺杆接触，可以快速而不是逐步地调节轮结构。

    Search query user interface
    65.
    发明授权
    Search query user interface 有权

    公开(公告)号：US09836550B2

    公开(公告)日：2017-12-05

    申请号：US12145079

    申请日：2008-06-24

    申请人： Jack Chu ,  Chris Mancini ,  Lawrence Morrisroe

    发明人： Jack Chu ,  Chris Mancini ,  Lawrence Morrisroe

    IPC分类号： G06F3/048 ,  G06F17/30 ,  G06F3/14 ,  G06F5/10

    CPC分类号： G06F17/30899 ,  G06F3/048 ,  G06F3/1438 ,  G06F5/10

    摘要： In a client-server system where a client system presents a browser for user interaction, a browser user interface includes functionality for handling dynamic interface elements received by the browser in connection with received pages, presented as part of the browser user interface and modified in response to selected user input without requiring farther interaction with a server. In addition to, or in place of, dynamic interface elements such as slide sheets, the browser user interface might also include a rotation display area, tool displays that can overlay a page, opaquely or semi-transparently, menu structures, and an ability for the user to modify a page layout without requiring server interaction. The browser might comprise storage for a plurality of rotation display items for storing a summary and a primary presentation for each rotation display item, logic for displaying, by the browser, primary presentations for less all of the plurality of rotation display items in the rotation display area, logic for displaying, by the browser, summaries for items wherein the number of summaries is greater than the number of primary presentations presented at one time, logic for highlighting, among the summaries displayed, the ones of the summaries that correspond to the primary presentations displayed in the rotation display area; and logic for rotating the plurality of rotation display items to display primary presentations for a different subsets of the rotation display items and for updating highlighting of summaries to correspond to the different subsets of rotation display items.

    Low powered activation electronic device
    68.
    发明申请
    Low powered activation electronic device 有权
    低功率激活电子设备

    公开(公告)号：US20110084683A1

    公开(公告)日：2011-04-14

    申请号：US12806460

    申请日：2010-08-13

    申请人： Jack Chu

    发明人： Jack Chu

    IPC分类号： H02J1/00

    CPC分类号： H03K17/9645 ,  A61F13/42 ,  A63H3/36 ,  H01H2239/074

    摘要： A low powered activation electronic device includes a power source, an electronic circuit, having two spaced apart electrodes, electrically connected to the power source to form an opened circuit, and two fabric contacts made of textile material provided at the two electrodes of the electronic circuit, wherein the electronic circuit is formed a closed circuit to activate the electronic device in responsive to a physical touch by a human operator at the two fabric contacts.

    摘要翻译： 低功率激活电子设备包括电源，电子电路，具有两个间隔开的电极，电连接到电源以形成开路，以及由设置在电子电路的两个电极处的纺织材料制成的两个织物触点 ，其中所述电子电路形成闭合电路，以响应于所述两个织物触点处的操作者的物理触摸来激活所述电子设备。