公开(公告)号：US07432203B2

公开(公告)日：2008-10-07

申请号：US11147675

申请日：2005-06-08

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/44

CPC classification number: H01L21/76885 ,  H01L21/76837 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio.

Abstract translation: 公开了半导体器件及其制造方法。 所示的半导体器件制造方法包括在低氧化物层上形成钛和氮化钛（Ti / TiN）金属层; 在Ti / TiN金属层上形成铝金属层; 在所述铝金属层上形成氧化铟锡（ITO）层; 并通过光刻法形成ITO层，铝金属层和Ti / TiN金属层，以形成金属层图案并暴露出低氧化物层的表面，从而有助于填充相邻 通过产生具有减小的纵横比的金属层图案来形成金属层图案的线。

公开(公告)号：US07416982B2

公开(公告)日：2008-08-26

申请号：US11254441

申请日：2005-10-20

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/44

CPC classification number: H01L23/53238 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

Abstract translation: 公开了具有铜线层的半导体器件及其制造方法。 所示的半导体器件包括具有接触孔的镶嵌绝缘层，包含第一钌层，氧化钌层和第二钌层的阻挡金属层，形成在阻挡金属层上的种子铜层，以及铜线层 由Cu-Ag-Au固溶体制成。 公开的制造半导体器件的示例性方法减少和/或防止阻挡金属层与硅衬底或镶嵌绝缘层的接触特性劣化。 此外，通过形成由Cu-Ag-Au固溶体制成的铜线层，可以提高长期的器件可靠性。

公开(公告)号：US07391588B2

公开(公告)日：2008-06-24

申请号：US11442238

申请日：2006-05-30

Applicant: Kyoung-man Cho ,  Jae-suk Lee

Inventor： Kyoung-man Cho ,  Jae-suk Lee

IPC: G11B33/00 ,  H01R12/00 ,  H01R29/00

CPC classification number: H01R12/62 ,  H01R12/7094 ,  H01R12/714 ,  H01R13/2442 ,  H01R13/7033

Abstract: A connector, and a hard disk drive having the connector, the connector including connecting pins arranges so as to be spaced apart from one another; and a connecting member to contact the connecting pins and cause an electrical short in response to no external force being applied to the connecting pins; wherein the electrical short is removed in response to an external force being applied to the connecting pins. The connecting pins are moved so as not to contact the connecting member in response to an external force being applied to the connecting pins.

Abstract translation: 连接器和具有连接器的硬盘驱动器，连接器包括连接销布置成彼此间隔开; 以及连接构件，其接触所述连接销并且响应于没有外力施加到所述连接销而引起电短路; 其中响应于施加到所述连接销的外力来去除所述电短路。 连接销被移动以便响应于施加到连接销的外力而不接触连接构件。

公开(公告)号：US07364968B2

公开(公告)日：2008-04-29

申请号：US11611679

申请日：2006-12-15

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/8242

CPC classification number: H01L28/84 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The capacitor in a semiconductor device includes a substrate, a lower electrode formed over the substrate, a diffusion barrier formed over the lower electrode, a plurality of agglomerates formed over the diffusion barrier, a dielectric layer formed over the surface of the agglomerates to form an uneven surface, and an upper electrode formed over the dielectric layer.

Abstract translation: 半导体器件中的电容器包括衬底，形成在衬底上的下电极，形成在下电极上的扩散阻挡层，形成在扩散阻挡层上的多个附聚物，形成在附聚物表面上的电介质层，以形成 不平坦的表面和形成在电介质层上的上电极。

公开(公告)号：US07341942B2

公开(公告)日：2008-03-11

申请号：US11312353

申请日：2005-12-21

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/283

CPC classification number: H01L21/76838 ,  H01L21/2855 ,  H01L21/7684

Abstract: A method for forming a metal line of a semiconductor device forms an aluminum line having an excellent orientation. A specific resistance of a metal line is reduced, thereby enabling sufficient supply of a desired electric current. The method includes steps of forming a lower reflection preventing layer on a silicon wafer, forming a first aluminum layer on the lower reflection preventing layer, forming a second aluminum layer on the first aluminum layer, lowering a surface roughness of the second aluminum layer, forming an upper reflection preventing layer on the second aluminum layer, and forming an aluminum line.

Abstract translation: 形成半导体器件的金属线的方法形成具有优异取向的铝线。 金属线的电阻降低，从而能够充分地提供所需的电流。 该方法包括在硅晶片上形成下反射防止层的步骤，在下反射防止层上形成第一铝层，在第一铝层上形成第二铝层，降低第二铝层的表面粗糙度，形成 在第二铝层上形成上反射防止层，形成铝线。

公开(公告)号：US20070060705A1

公开(公告)日：2007-03-15

申请号：US11485832

申请日：2006-07-13

Applicant: Jae-Suk Lee ,  Shahinur Rahman ,  Shashadhar Samal ,  Hee-Soo Yoo

Inventor： Jae-Suk Lee ,  Shahinur Rahman ,  Shashadhar Samal ,  Hee-Soo Yoo

IPC: C08L53/00

CPC classification number: C08F297/02 ,  C08F297/023

Abstract: The present invention relates to an amphiphilic triblock copolymer comprising a poly(2-vinylpyridine) block and a poly(alkylisocyanate) block and the preparation method thereof, and particularly relates to an amphiphilic triblock copolymer comprising a coil-shaped hydrophilic poly(2-vinylpyridine) block and a rod-shaped lipophilic poly(alkylisocyanate) block, having a controlled structure of coil-rod-coil or rod-coil-rod, and the preparation method thereof.

Abstract translation: 本发明涉及包含聚（2-乙烯基吡啶）嵌段和聚（异氰酸烷基酯）嵌段的两亲性三嵌段共聚物及其制备方法，特别涉及包含线圈状亲水性聚（2-乙烯基吡啶）的两亲性三嵌段共聚物 ）嵌段和棒状亲油性聚（烷基异氰酸酯）嵌段及其制备方法及其制备方法。

公开(公告)号：US20060141779A1

公开(公告)日：2006-06-29

申请号：US11319546

申请日：2005-12-29

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/44

CPC classification number: H01L21/76886 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes forming a photoresist pattern for ion implantation, implanting ions into the aluminum layer, and annealing by using a rapid thermal process.

Abstract translation: 一种形成铝触点的方法，包括在限定接触孔的层间绝缘层图案上形成阻挡金属层，并且在阻挡金属层上形成铝层以填充接触孔。 该方法还包括形成用于离子注入的光致抗蚀剂图案，将离子注入到铝层中，以及通过使用快速热处理进行退火。

公开(公告)号：US20060141752A1

公开(公告)日：2006-06-29

申请号：US11291948

申请日：2005-12-01

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02579 ,  H01L21/02532

Abstract: A P-type polysilicon layer having a stable and desired resistivity is formed by alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition, and thereafter forming a P-type polysilicon layer by thermally diffusing the plurality of group IIIA element atom layers into the plurality of silicon atom layers. The plurality of group IIIA element atom layers may comprise Al, Ga, In, and/or Tl.

公开(公告)号：US07018907B2

公开(公告)日：2006-03-28

申请号：US10748468

申请日：2003-12-30

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/76

CPC classification number: H01L21/76229

Abstract: Methods for forming shallow trench isolation structures are disclosed. In a disclosed example, after a trench is formed in a substrate, an oxide layer is formed on sidewalls and a bottom of the trench. Then, a metal or poly-silicon layer is formed on the oxide layer. Next, a portion of the metal or poly-silicon layer is etched such that the oxide layer on the bottom of the trench is exposed, while leaving the metal or poly-silicon layer on the sidewalls of the trench. Finally, a dielectric material layer is deposited to fully fill the trench.

Abstract translation: 公开了形成浅沟槽隔离结构的方法。 在公开的示例中，在衬底中形成沟槽之后，在沟槽的侧壁和底部上形成氧化物层。 然后，在氧化物层上形成金属或多晶硅层。 接下来，蚀刻金属或多晶硅层的一部分，使得沟槽底部的氧化物层被暴露，同时将金属或多晶硅层留在沟槽的侧壁上。 最后，沉积介电材料层以完全填充沟槽。

公开(公告)号：US20060002007A1

公开(公告)日：2006-01-05

申请号：US11149303

申请日：2005-06-10

Applicant: Jae-suk Lee ,  Young-rok Oh

Inventor： Jae-suk Lee ,  Young-rok Oh

IPC: G11B17/08

CPC classification number: G11B33/08 ,  G11B17/038

Abstract: A hard disk drive (HDD) having a disk damper and a disk protector. The HDD includes a base member, a spindle motor installed on the base member, a plurality of data storage disks mounted on the spindle motor, an actuator pivotably installed on the base member and moving a read/write head to specified positions over the disks, a disk damper disposed between adjacent disks of the plurality of disks and reducing vibrations of the disks, and a disk protector projecting by a specified height toward the disks form positions of top and bottom surfaces of the disk damper to correspond to outer edges of the disks where data is not recorded. Accordingly, if the disks are deflected due to an external shock, only the outer edges of the disks contact the disk protector, thereby preventing data recording surfaces of the disks from being damaged.

Abstract translation: 具有盘式阻尼器和盘保护器的硬盘驱动器（HDD）。 HDD包括基座构件，安装在基座构件上的主轴电机，安装在主轴电机上的多个数据存储盘，可枢转地安装在基座构件上并将读/写头移动到盘上指定位置的执行器， 设置在所述多个盘的相邻盘之间并减少所述盘的振动的盘式阻尼器，以及朝向所述盘突出特定高度的盘保护器形成所述盘式减震器的顶表面和底表面的位置以对应于所述盘的外边缘 其中不记录数据。 因此，如果磁盘由于外部冲击而偏转，则只有磁盘的外边缘与磁盘保护器接触，从而防止磁盘的数据记录表面被损坏。