公开(公告)号：US08036045B2

公开(公告)日：2011-10-11

申请号：US12315025

申请日：2008-11-26

申请人： Joo Hyeon Lee ,  Yin Jae Lee

发明人： Joo Hyeon Lee ,  Yin Jae Lee

IPC分类号： G11C7/10

CPC分类号： G11C7/1045 ,  G11C7/1006 ,  G11C7/1012

摘要： A data output control circuit in a semiconductor memory device includes a driving signal generating unit configured to decode first and second I/O mode signals and first and second address level signals in response to a bank active signal and generate driving signals, and a data output multiplexing unit configured to output data signals of global I/O lines as multiplexing signals in response to the driving signals.

摘要翻译： 半导体存储器件中的数据输出控制电路包括：驱动信号生成单元，被配置为响应于存储体有效信号来解码第一和第二I / O模式信号以及第一和第二地址电平信号，并产生驱动信号，以及数据输出 复用单元，被配置为响应于驱动信号，将全局I / O线的数据信号作为多路复用信号输出。

公开(公告)号：US08033139B2

公开(公告)日：2011-10-11

申请号：US12459111

申请日：2009-06-26

申请人： Joo Hyeon Lee

发明人： Joo Hyeon Lee

IPC分类号： G11C7/00

CPC分类号： G11C11/4094 ,  G11C8/12 ,  G11C11/4076

摘要： A bank precharge signal generation circuit includes a precharge signal generation unit for generating a second precharge signal including a pulse, which is generated in a period delayed by a predetermined period as compared to a pulse of a first precharge signal, in response to an all-bank precharge signal, and a bank precharge signal generation unit for receiving the first and second precharge signals and generate first and second bank precharge signals for precharging first and second banks.

摘要翻译： 存储体预充电信号产生电路包括一个预充电信号产生单元，用于产生一个第二预充电信号，该第二预充电信号包括脉冲，该脉冲响应于全频信号产生装置，该脉冲在与第一预充电信号的脉冲相比延迟预定周期的周期中产生， 存储体预充电信号和存储体预充电信号生成单元，用于接收第一和第二预充电信号，并产生用于对第一和第二存储体进行预充电的第一和第二存储体预充电信号。

公开(公告)号：US07927166B2

公开(公告)日：2011-04-19

申请号：US12357350

申请日：2009-01-21

申请人： Chang-Mo Park ,  Jae-Kook Ha ,  Joo-Hyeon Lee

发明人： Chang-Mo Park ,  Jae-Kook Ha ,  Joo-Hyeon Lee

IPC分类号： H01J9/00

CPC分类号： H01L51/5231

摘要： In a method of manufacturing an organic light emitting display according to an embodiment, when a thin film transistor substrate including a display area and a non-display area is prepared, an organic light emitting layer is formed on the display area. Then, a first cathode layer is formed on the organic light emitting layer through a first deposition method, and a second cathode layer is formed on the first cathode layer through a second deposition method. The first and/or second deposition method may be performed by using heat. Thus, the light-emitting quality of the organic light emitting display may be improved.

摘要翻译： 在根据实施例的制造有机发光显示器的方法中，当准备包括显示区域和非显示区域的薄膜晶体管基板时，在显示区域上形成有机发光层。 然后，通过第一沉积方法在有机发光层上形成第一阴极层，并且通过第二沉积方法在第一阴极层上形成第二阴极层。 第一和/或第二沉积方法可以通过使用热来进行。 因此，可以提高有机发光显示器的发光质量。

公开(公告)号：US20100085819A1

公开(公告)日：2010-04-08

申请号：US12319063

申请日：2008-12-30

申请人： Joo Hyeon Lee ,  Yin Jae Lee

发明人： Joo Hyeon Lee ,  Yin Jae Lee

IPC分类号： G11C7/00 ,  G11C8/18

CPC分类号： G11C8/18 ,  G11C7/1018

摘要： A burst length control circuit capable of performing read and write operations in high speed according to a burst length and a semiconductor memory device using the same includes a clock signal generating unit for generating first and second internal clock signals from a clock signal in response to a first and second burst signals, a control signal generating unit for driving in response to the first and second internal clock signals, wherein the control signal generating unit for generating first and second control signals, enable sections of the first and second control signals being controlled according to the first and second burst signals at a read operation or write operation, and a burst termination signal generating unit for generating a burst termination signal in response to the first and second burst signals. The first control signal is disabled in response to the burst termination signal.

摘要翻译： 能够根据突发长度高速执行读写操作的突发长度控制电路和使用该突发长度的半导体存储器件包括：时钟信号产生单元，用于响应于时钟信号产生第一和第二内部时钟信号 第一和第二突发信号，用于响应于第一和第二内部时钟信号而驱动的控制信号产生单元，其中用于产生第一和第二控制信号的控制信号产生单元使第一和第二控制信号的部分根据 在读取操作或写入操作时与第一和第二突发信号相关联，以及突发终止信号产生单元，用于响应于第一和第二突发信号产生突发终止信号。 第一控制信号响应于突发终止信号被禁用。

公开(公告)号：US20090261709A1

公开(公告)日：2009-10-22

申请号：US12357350

申请日：2009-01-21

申请人： Chang-Mo PARK ,  Jae-Kook Ha ,  Joo-Hyeon Lee

发明人： Chang-Mo PARK ,  Jae-Kook Ha ,  Joo-Hyeon Lee

IPC分类号： H01J1/62 ,  B05D5/12

CPC分类号： H01L51/5231

摘要： In a method of manufacturing an organic light emitting display according to an embodiment, when a thin film transistor substrate including a display area and a non-display area is prepared, an organic light emitting layer is formed on the display area. Then, a first cathode layer is formed on the organic light emitting layer through a first deposition method, and a second cathode layer is formed on the first cathode layer through a second deposition method. The first and/or second deposition method may be performed by using heat. Thus, the light-emitting quality of the organic light emitting display may be improved.

摘要翻译： 在根据实施例的制造有机发光显示器的方法中，当准备包括显示区域和非显示区域的薄膜晶体管基板时，在显示区域上形成有机发光层。 然后，通过第一沉积方法在有机发光层上形成第一阴极层，并且通过第二沉积方法在第一阴极层上形成第二阴极层。 第一和/或第二沉积方法可以通过使用热来进行。 因此，可以提高有机发光显示器的发光质量。

公开(公告)号：US20090221209A1

公开(公告)日：2009-09-03

申请号：US12357327

申请日：2009-01-21

申请人： Jae-Kook HA ,  Chang-Woong Chu ,  Jin-Koo Chung ,  Joo-Hyeon Lee

发明人： Jae-Kook HA ,  Chang-Woong Chu ,  Jin-Koo Chung ,  Joo-Hyeon Lee

IPC分类号： H01J9/00

CPC分类号： H01L51/56 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5012 ,  H01L51/5048

摘要： In accordance with one or more embodiments of the present disclosure, a method of manufacturing a light-emitting element includes forming an anode on a substrate, forming a first transport layer including one or more first polar compounds on the anode, forming a first non-polar solvent layer on the first transport layer, forming a first polar solution layer including one or more light-emitting compounds on the first non-polar solution layer, drying a polar solvent of the first polar solution layer and the first non-polar solvent layer so that a light-emitting layer including the one or more light-emitting compounds is formed on the first transport layer and forming a cathode on the light-emitting layer. The cathode is disposed opposite to the anode. As such, damage to the first transport layer may be reduced when forming the light-emitting layer, which may improve the reliability and productivity of a manufacturing process.

摘要翻译： 根据本公开的一个或多个实施例，制造发光元件的方法包括在衬底上形成阳极，在阳极上形成包括一个或多个第一极性化合物的第一传输层， 在第一传输层上形成极性溶剂层，在第一非极性溶液层上形成包含一种或多种发光化合物的第一极性溶液层，干燥第一极性溶液层和第一非极性溶剂层的极性溶剂 使得在第一传输层上形成包含一种或多种发光化合物的发光层，并在发光层上形成阴极。 阴极与阳极相对设置。 因此，当形成发光层时，可能减少对第一传输层的损伤，这可以提高制造工艺的可靠性和生产率。

公开(公告)号：US20090206739A1

公开(公告)日：2009-08-20

申请号：US12354371

申请日：2009-01-15

申请人： Joo-Hyeon LEE ,  Chang-Woong CHU ,  Chang-Mo PARK ,  Won-Hoe KOO

发明人： Joo-Hyeon LEE ,  Chang-Woong CHU ,  Chang-Mo PARK ,  Won-Hoe KOO

IPC分类号： H01L51/50 ,  H01L21/02

CPC分类号： H01L51/5246

摘要： An organic light-emitting diode (“OLED”) device includes an organic light-emitting substrate part and a protective cover part. The organic light-emitting substrate part includes a base substrate and an OLED display portion formed on the base substrate to display an image. The protective cover part includes a first frit glass disposed on the OLED display portion to cover the OLED display portion, and a second frit glass formed around a periphery of the first frit glass. The second frit glass is connected to the first frit glass.

摘要翻译： 有机发光二极管（“OLED”）器件包括有机发光基板部分和保护盖部分。 有机发光基板部分包括基底基板和形成在基底基板上以显示图像的OLED显示部分。 保护盖部分包括布置在OLED显示部分上以覆盖OLED显示部分的第一玻璃料玻璃和围绕第一玻璃料玻璃周边形成的第二玻璃料玻璃。 第二熔结玻璃连接到第一玻璃料。

公开(公告)号：US20080210960A1

公开(公告)日：2008-09-04

申请号：US12008425

申请日：2008-01-11

申请人： Jae-kook Ha ,  Chang-woong Chu ,  Joo-hyeon Lee ,  Jun-ho Choi

发明人： Jae-kook Ha ,  Chang-woong Chu ,  Joo-hyeon Lee ,  Jun-ho Choi

IPC分类号： H01L33/00 ,  H01L51/54

CPC分类号： H01L51/5076 ,  H01L27/3209 ,  H01L27/3211 ,  H01L51/001 ,  H01L51/5004 ,  H01L51/5036 ,  H01L51/5052 ,  H01L51/506 ,  H01L51/5206

摘要： In one embodiment, a display device includes: a first electrode; a hole transfer layer which is formed on the first electrode, the hole transfer layer comprising a first host used as a hole transfer material and a first dopant used as an electron accepting material; an emitting material layer which is formed on the hole transfer layer, the emitting material layer comprising red, blue and green light material layers stacked in sequence; an electron transfer layer which is formed on the emitting material layer, the electron transfer layer comprising a second host used as an electron transfer material and a second dopant used as an electron donating material; and a second electrode which is formed on the electron transfer layer.

摘要翻译： 在一个实施例中，显示装置包括：第一电极; 空穴转移层，形成在第一电极上，空穴转移层包括用作空穴转移材料的第一主体和用作电子接受材料的第一掺杂物; 形成在所述空穴转移层上的发光材料层，所述发光材料层包括依次堆叠的红色，蓝色和绿色光材料层; 形成在发光材料层上的电子转移层，电子转移层包括用作电子转移材料的第二主体和用作给电子材料的第二掺杂剂; 以及形成在电子转移层上的第二电极。

公开(公告)号：US20080118743A1

公开(公告)日：2008-05-22

申请号：US11867910

申请日：2007-10-05

申请人： Joo Hyeon LEE ,  Chang Mo PARK

发明人： Joo Hyeon LEE ,  Chang Mo PARK

IPC分类号： G11B11/105 ,  H01J9/02 ,  H01J9/14

CPC分类号： H01L51/56 ,  C23C14/042 ,  H01L27/322 ,  H01L27/3244 ,  Y10T428/26

摘要： A mask for depositing an organic film includes a mask sheet having at least two openings with different sizes and a blocking part formed in a region where the at least two openings are not formed. A supporting frame is formed on a back side of the mask sheet to support the mask sheet, and a mask frame receives a peripheral region of the supporting frame and supports a vertical pressure applied to the supporting frame and the mask sheet.

摘要翻译： 用于沉积有机膜的掩模包括具有至少两个具有不同尺寸的开口的掩模片和在未形成至少两个开口的区域中形成的阻挡部分。 支撑框架形成在掩模片的背面上以支撑掩模片，并且掩模框架容纳支撑框架的周边区域并且支撑施加到支撑框架和掩模片材的垂直压力。

公开(公告)号：US20080073700A1

公开(公告)日：2008-03-27

申请号：US11849755

申请日：2007-09-04

申请人： Joo-Hyeon Lee

发明人： Joo-Hyeon Lee

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L29/40114

摘要： A method for manufacturing a flash memory device includes: forming a floating gate on a tunnel oxide film formed on a semiconductor substrate; forming an ONO film on the floating gate; performing a well implant process to form a well on the semiconductor substrate; and performing an ashing process and a cleaning process using at least two of H2SO4, H2O2, HF, H2O, and O3. As a result, roughness is not generated on the upper surface of the ONO film which tends to cause data retention failures of the flash memory device during a high temperature operating life (HTOL) testing process, making it possible to improve the reliability of the flash memory device.

摘要翻译： 一种制造闪速存储器件的方法包括：在形成在半导体衬底上的隧道氧化膜上形成浮置栅极; 在浮闸上形成ONO膜; 执行良好的注入工艺以在半导体衬底上形成阱; 以及使用H 2 SO 2 H 2，H 2 O 2 O 2的至少两个进行灰化处理和清洁处理。 ，HF，H 2 O和O 3。 结果，在高温运行寿命（HTOL）测试过程中，在ONO膜的上表面上不会产生粗糙度，其倾向于引起闪存器件的数据保持故障，从而可以提高闪存的可靠性 存储设备。