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公开(公告)号：US10785436B1
公开(公告)日：2020-09-22
申请号：US16568203
申请日：2019-09-11
Applicant: PixArt Imaging Incorporation
Inventor： Wooi-Kip Lim
IPC: H04N5/341 , H04N5/3745 , H04N5/378 , H04N5/376
Abstract: An image sensor for capturing an image, includes: an array of pixel circuits, wherein each of the pixel circuits is for sensing a portion of the image, and generate a sample signal and a hold signal according to the portion of the image and a predetermined reset voltage respectively; and a transfer circuit, which is coupled to the array, and is for converting the sample signals and hold signals to corresponding digital sensing signals and corresponding digital reset signals respectively, to generate pixel signals respectively corresponding to the pixel circuits according to the digital sensing signals and the digital reset signals; wherein the transfer circuit converts the sample signal generated by one of the pixel circuits to the corresponding digital sensing signal and converts the hold signal generated by another one of the pixel circuits to the corresponding digital reset signal at least partially within a same period.
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公开(公告)号：US10606366B2
公开(公告)日：2020-03-31
申请号：US16449366
申请日：2019-06-22
Applicant: PixArt Imaging Incorporation, R.O.C.
Inventor： Yu-Hao Huang , Yi-Fang Lee , Ming-Tsan Kao
IPC: G06F3/01 , G06F3/03 , G06F3/0484
Abstract: An input system includes a first gesture detection unit and a second gesture detection unit. The first gesture detection unit includes a first light emitting device for emitting a first light beam, a first light sensing device for receiving the first light beam reflected by a first motion trajectory generated by a user and outputting a first image signal, and a first processing unit for processing the first image signal and outputting a first command signal. The second gesture detection unit includes a second light emitting device for emitting a second light beam, a second light sensing device for receiving the second light beam reflected by a second motion trajectory generated by the user and outputting a second image signal, and a second processing unit for processing the second image signal and outputting a second command signal.
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公开(公告)号：US20190310717A1
公开(公告)日：2019-10-10
申请号：US16449366
申请日：2019-06-22
Applicant: PixArt Imaging Incorporation, R.O.C.
Inventor： Yu-Hao Huang , Yi-Fang Lee , Ming-Tsan Kao
IPC: G06F3/01 , G06F3/0484 , G06F3/03
Abstract: An input system includes a first gesture detection unit and a second gesture detection unit. The first gesture detection unit includes a first light emitting device for emitting a first light beam, a first light sensing device for receiving the first light beam reflected by a first motion trajectory generated by a user and outputting a first image signal, and a first processing unit for processing the first image signal and outputting a first command signal. The second gesture detection unit includes a second light emitting device for emitting a second light beam, a second light sensing device for receiving the second light beam reflected by a second motion trajectory generated by the user and outputting a second image signal, and a second processing unit for processing the second image signal and outputting a second command signal.
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公开(公告)号：US10386240B2
公开(公告)日：2019-08-20
申请号：US16194385
申请日：2018-11-18
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US10359868B2
公开(公告)日：2019-07-23
申请号：US15641852
申请日：2017-07-05
Applicant: PixArt Imaging Incorporation, R.O.C.
Inventor： Chia-Cheun Liang , Yi-Hsien Ko
IPC: G06F3/038 , G06F3/033 , G06F3/0354 , G06F3/03 , G06F3/048
Abstract: The present invention discloses a method and apparatus for controlling an object movement on a screen. The method senses a first change in a position of a pointing device in a coordinate system to obtain a first displacement, and controls the object movement by a first displacement output ratio according to the first displacement. The method senses a second change in a position of the pointing device in a coordinate system to obtain a second displacement, and controls the object movement by a second displacement output ratio when a difference between a direction of the first displacement and a direction of the second displacement exceeds a first angle threshold, wherein the second displacement output ratio is lower than the first displacement output ratio.
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Patent Agency Ranking
公开(公告)号：US20190113390A1
公开(公告)日：2019-04-18
申请号：US16183727
申请日：2018-11-07
Applicant: PixArt Imaging Incorporation
Inventor： Chih-Ming Sun , Ming-Han Tsai
Abstract: The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on a part of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.
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公开(公告)号：US10161802B2
公开(公告)日：2018-12-25
申请号：US15917606
申请日：2018-03-10
Applicant: PixArt Imaging Incorporation
Inventor： Ming-Han Tsai , Shin-Lin Wang
Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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公开(公告)号：US20180190786A1
公开(公告)日：2018-07-05
申请号：US15911113
申请日：2018-03-03
Applicant: PixArt Imaging Incorporation
Inventor： Chih-Ming Sun , Hsin-Hui Hsu , Ming-Han Tsai
IPC: H01L29/51 , H01L29/40 , H01L21/308 , H01L21/762
CPC classification number: H01L29/518 , H01L21/3086 , H01L21/76224 , H01L29/401 , H01L29/42324
Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.
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69.发明申请公开(公告)号：US20180115731A1
公开(公告)日：2018-04-26
申请号：US15598886
申请日：2017-05-18
Applicant: PixArt Imaging Incorporation
Inventor： Yung-Chung Lee , Yi-Cheng Chiu , Hsin-Hui Hsu , Jui-Te Chiu , Han-Chi Liu
IPC: H04N5/3745 , H04N5/378 , H04N5/355
CPC classification number: H04N5/37452 , H04N5/35554 , H04N5/35581 , H04N5/3559
Abstract: The present invention provides a global shutter high dynamic range pixel and a global shutter high dynamic range image sensor. The global shutter high dynamic range pixel includes: a photoelectric transducer unit, a floating node, a first charge transfer unit, a second charge transfer unit and a pixel signal output unit. The first charge transfer unit includes a Metal-Oxide-Semiconductor (MOS) capacitor. The MOS capacitor is configured to operably accumulate at least a portion of the charges transferred from the photoelectric transducer unit. The MOS capacitor is turned ON or OFF according to a control signal, thereby forming a gate-induced potential well internally within the MOS capacitor, so as to control the portion of charges.
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公开(公告)号：US09941379B2
公开(公告)日：2018-04-10
申请号：US15068573
申请日：2016-03-12
Applicant: PixArt Imaging Incorporation
Inventor： Chih-Ming Sun , Hsin-Hui Hsu , Ming-Han Tsai
IPC: H01L21/308 , H01L21/311 , H01L21/762 , H01L29/51 , H01L29/40
CPC classification number: H01L29/518 , H01L21/3086 , H01L21/76224 , H01L29/401 , H01L29/42324
Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.
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