公开(公告)号：US07255626B2

公开(公告)日：2007-08-14

申请号：US11131266

申请日：2005-05-18

Applicant: Hung-Peng Fu

Inventor： Hung-Peng Fu

IPC: A63H17/267

CPC classification number: A63H17/002 ,  A63H29/22 ,  A63H31/00

Abstract: This invention is directed to a device of “a tutorial and wits-increment toy car”, mainly consists of a shell body with gear case at both sides, and within the gear case sets up multiple wheels used to act as mechanical powers transfer connection between the motor and the wheels, whereas at the top and back of the shell body fixed with multiple metal buttons and hexagonal buttons. According to the former structure, altering the size of wheel can adjust the wheel rotating speed, and makes the learners understand the basic electronic and mechanical control theory while playing the toy car, and makes the present invention become a best tool of cerebration training.

Abstract translation: 本发明涉及一种“教具和智能增益玩具车”的装置，主要由两侧具有齿轮箱的壳体构成，并且在齿轮箱内设置多个车轮，用于作为机械动力传递连接 电机和车轮，而在壳体的顶部和后部固定有多个金属按钮和六边形按钮。 根据前一种结构，改变车轮尺寸可以调节车轮转速，使学习者在玩玩具车时了解基本的电子和机械控制理论，使本发明成为脑训练的最佳工具。

公开(公告)号：US07122484B2

公开(公告)日：2006-10-17

申请号：US10833558

申请日：2004-04-28

Applicant: Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Hsu ,  Hun-Jan Tao

Inventor： Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Hsu ,  Hun-Jan Tao

IPC: H01L21/469 ,  H01L21/44

CPC classification number: H01L21/76814 ,  C11D3/3947 ,  C11D7/50 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76808

Abstract: A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.

Abstract translation: 公开了一种从基底上的低k电介质层和金属层上方的开口除去有机材料的方法。 将由一种或多种添加剂如羟胺或铵盐组成的臭氧水溶液作为喷雾或浸渍施用。 可以加入螯合剂以保护金属层免于氧化。 可以将二酮加入到臭氧水溶液中或在随后的步骤中以气相或液相的形式施加，以除去在臭氧处理期间形成的任何金属氧化物。 可以使用包括CO 2和臭氧的超临界流体混合物来除去不易被上述液体溶液剥离的有机残留物。 去除方法防止低k电介质层的介电常数和折射率的变化，并且清洁地去除提高器件性能的残留物。

公开(公告)号：US06969688B2

公开(公告)日：2005-11-29

申请号：US10266880

申请日：2002-10-08

Applicant: Baw-Ching Perng ,  Fang-Cheng Chen ,  Hun-Jan Tao ,  Peng-Fu Hsu ,  Yue-Ho Hsieh ,  Chih-Cheng Wang ,  Shih-Yi Hsiao

Inventor： Baw-Ching Perng ,  Fang-Cheng Chen ,  Hun-Jan Tao ,  Peng-Fu Hsu ,  Yue-Ho Hsieh ,  Chih-Cheng Wang ,  Shih-Yi Hsiao

IPC: H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/461

CPC classification number: H01L21/31111

Abstract: A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.

Abstract translation: 用于蚀刻铪和锆的氧化物的湿蚀刻剂溶液组合物和方法，其包括相对于任意体积的湿蚀刻剂溶液以大于约50重量％存在的至少一种溶剂; 相对于任意体积的湿蚀刻溶液，至少一种螯合剂以约0.1重量％至约10重量％存在; 并且相对于任意体积的湿蚀刻剂溶液，至少一种含卤素的酸的存在量为约0.0001重量％至约10重量％。

公开(公告)号：US20050245082A1

公开(公告)日：2005-11-03

申请号：US10833558

申请日：2004-04-28

Applicant: Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Sheu ,  Hun-Jan Tao

Inventor： Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Sheu ,  Hun-Jan Tao

IPC: C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76814 ,  C11D3/3947 ,  C11D7/50 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76808

Abstract: A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.

Abstract translation: 公开了一种从基底上的低k电介质层和金属层上方的开口除去有机材料的方法。 将由一种或多种添加剂如羟胺或铵盐组成的臭氧水溶液作为喷雾或浸渍施用。 可以加入螯合剂以保护金属层免于氧化。 可以将二酮加入到臭氧水溶液中或在随后的步骤中以气相或液相的形式施加，以除去在臭氧处理期间形成的任何金属氧化物。 可以使用包括CO 2和臭氧的超临界流体混合物来除去不易被上述液体溶液剥离的有机残留物。 去除方法防止低k电介质层的介电常数和折射率的变化，并且清洁地去除提高器件性能的残留物。