利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

210 条记录 (耗时 0.04 秒)

    Process for removing organic materials during formation of a metal interconnect
    2.
    发明授权
    Process for removing organic materials during formation of a metal interconnect 有权
    在形成金属互连件期间去除有机材料的方法

    公开(公告)号：US07122484B2

    公开(公告)日：2006-10-17

    申请号：US10833558

    申请日：2004-04-28

    申请人： Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Hsu ,  Hun-Jan Tao

    发明人： Baw-Ching Perng ,  Yi-Chen Huang ,  Jun-Lung Huang ,  Bor-Wen Chan ,  Peng-Fu Hsu ,  Hsin-Ching Shih ,  Lawrance Hsu ,  Hun-Jan Tao

    IPC分类号： H01L21/469 ,  H01L21/44

    CPC分类号： H01L21/76814 ,  C11D3/3947 ,  C11D7/50 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76808

    摘要： A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.

    摘要翻译： 公开了一种从基底上的低k电介质层和金属层上方的开口除去有机材料的方法。 将由一种或多种添加剂如羟胺或铵盐组成的臭氧水溶液作为喷雾或浸渍施用。 可以加入螯合剂以保护金属层免于氧化。 可以将二酮加入到臭氧水溶液中或在随后的步骤中以气相或液相的形式施加，以除去在臭氧处理期间形成的任何金属氧化物。 可以使用包括CO 2和臭氧的超临界流体混合物来除去不易被上述液体溶液剥离的有机残留物。 去除方法防止低k电介质层的介电常数和折射率的变化，并且清洁地去除提高器件性能的残留物。

    Method of trimming technology
    3.
    发明授权
    Method of trimming technology 有权
    修边技术方法

    公开(公告)号：US07354847B2

    公开(公告)日：2008-04-08

    申请号：US10764913

    申请日：2004-01-26

    申请人： Bor-Wen Chan ,  Yi-Chun Huang ,  Baw-Ching Perng ,  Hun-Jan Tao

    发明人： Bor-Wen Chan ,  Yi-Chun Huang ,  Baw-Ching Perng ,  Hun-Jan Tao

    IPC分类号： H01L21/3205 ,  H01L27/10

    CPC分类号： H01L21/28123 ,  H01L21/0271 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823437

    摘要： A process for trimming a photoresist layer during the fabrication of a gate electrode in a MOSFET is described. A bilayer stack with a top photoresist layer on a thicker organic underlayer is patternwise exposed with 193 nm or 157 nm radiation to form a feature having a width w1 in the top layer. A pattern transfer through the underlayer is performed with an anisotropic etch based on H2/N2 and SO2 chemistry. The feature formed in the bilayer stack is trimmed by 10 nm or more to a width w2 by a HBr/O2/Cl2 plasma etch. The pattern transfer through an underlying gate layer is performed with a third etch based on HBr/O2/Cl2 chemistry. The underlayer is stripped by an O2 ashing with no damage to the gate electrode. Excellent profile control of the gate electrode is achieved and a larger (w1−w2) is possible than in prior art methods.

    摘要翻译： 描述了在MOSFET的栅电极制造期间修整光致抗蚀剂层的工艺。 在较厚的有机底层上具有顶部光致抗蚀剂层的双层叠层以193nm或157nm辐射图案曝光以形成顶层中具有宽度w 1 1的特征。 通过底层的图案转移通过基于H 2 N 2 N 2 N 2 SO 3和SO 2 H 2化学的各向异性蚀刻进行。 通过HBr / O 2 / Cl 2等离子体将形成在双层叠层中的特征修剪10nm以上至宽度w 2 2 <！ - SIPO

    Advanced control for plasma process
    4.
    发明授权
    Advanced control for plasma process 有权
    等离子体工艺的先进控制

    公开(公告)号：US06812044B2

    公开(公告)日：2004-11-02

    申请号：US10324465

    申请日：2002-12-19

    申请人： Hsien-Kuang Chiu ,  Bor-Wen Chan ,  Baw-Ching Perng ,  Yuan-Hung Chiu ,  Hun-Jan Tao

    发明人： Hsien-Kuang Chiu ,  Bor-Wen Chan ,  Baw-Ching Perng ,  Yuan-Hung Chiu ,  Hun-Jan Tao

    IPC分类号： H01L2100

    CPC分类号： H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

    摘要： A method for monitoring plasma parameters during a plasma process such as a plasma etching process, comparing the measured plasma parameters to predetermined parameter specifications, and either terminating the plasma process or modifying the plasma process in progress to re-establish the plasma parameters within the parameter specifications. The plasma parameters may be measured by the self-excited electron resonance spectroscopy (SEEKS) technique or by microwave interferometry.

    摘要翻译： 一种用于在诸如等离子体蚀刻工艺的等离子体工艺期间监测等离子体参数的方法，将测量的等离子体参数与预定参数规格进行比较，以及终止等离子体处理或修改正在进行的等离子体处理，以重新建立参数内的等离子体参数 规格。 等离子体参数可以通过自激电子共振光谱（SEEKS）技术或通过微波干涉测量来测量。

    Measuring low dielectric constant film properties during processing
    8.
    发明授权
    Measuring low dielectric constant film properties during processing 有权
    在加工期间测量低介电常数膜性能

    公开(公告)号：US07400401B2

    公开(公告)日：2008-07-15

    申请号：US11096049

    申请日：2005-03-31

    申请人： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

    发明人： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

    IPC分类号： G01J4/00

    CPC分类号： G01N21/211

    摘要： A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

    摘要翻译： 用于确定制造基板上的低k电介质膜的介电常数的方法和系统包括使用椭偏仪测量介电常数的电子部件，使用IR光谱仪测量介电常数的离子分量，测量总电介质 使用微波光谱仪恒定并导出介电常数的偶极分量。 测量和确定是非接触的，并且可以在进行测量后进一步处理的生产设备上进行。

    Measuring low dielectric constant film properties during processing
    9.
    发明申请
    Measuring low dielectric constant film properties during processing 有权
    在加工期间测量低介电常数膜性能

    公开(公告)号：US20060220653A1

    公开(公告)日：2006-10-05

    申请号：US11096049

    申请日：2005-03-31

    申请人： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

    发明人： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

    IPC分类号： G01R31/00 ,  G01N21/00 ,  G01J4/00

    CPC分类号： G01N21/211

    摘要： A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

    摘要翻译： 用于确定制造基板上的低k电介质膜的介电常数的方法和系统包括使用椭偏仪测量介电常数的电子部件，使用IR光谱仪测量介电常数的离子分量，测量总电介质 使用微波光谱仪恒定并导出介电常数的偶极分量。 测量和确定是非接触的，并且可以在进行测量后进一步处理的生产设备上进行。