COMPRESSED SENSING BASED OBJECT IMAGING SYSTEM AND IMAGING METHOD THEREFOR

    公开(公告)号:US20210144278A1

    公开(公告)日:2021-05-13

    申请号:US16618376

    申请日:2018-01-18

    Abstract: A compressed sensing based object imaging system and an imaging method thereof. The object imaging system comprises a light source generation unit (11), a filter unit (12), an image generation unit (13), an image acquisition unit (14), and an image reconstruction unit (15). The light source generation unit (11) generates experimental laser; the filter unit (12) filters high frequency scattered light and forms parallel light; the image generation unit (13) generates an experimental image in which an object image (16) and a specific measurement matrix (17) are superimposed; the image acquisition unit (14) performs compression sampling on the generated experimental image; and the image reconstruction unit (15) reconstructs sampling data to restore the object image (16). The imaging method comprises: establishing a sample database comprising the specific target object image (16); training sample images to obtain the specific measurement matrix (17); and simultaneously completing image sampling, image compression and image recognition in an all-optical system. The system and the method can greatly reduce the data volume recorded in image recognition and image matching, thus improving the real-time performance of the system, and providing a possibility of concurrent processing by machine vision and artificial intelligence.

    Cerium sulfate chelated sulfur dioxide, a preparation method and a use thereof

    公开(公告)号:US10899628B2

    公开(公告)日:2021-01-26

    申请号:US16094939

    申请日:2018-03-15

    Abstract: The disclosure discloses cerium sulfate chelated sulfur dioxide, a preparation method and a use thereof. The cerium sulfate chelated sulfur dioxide has a molecular formula of Ce[SO4][SO2].2H2O. It is a white crystal and the preparation method thereof may comprise the following steps: adding anhydrous cerium sulfate to dilute sulfuric acid with stirring for dissolvation; adding a solvent followed by refluxing at 45-50° C. for 2.0-2.5 h; heating the reaction product to remove the solvent, cooling to 20° C. or lower, and adding dilute sulfuric acid to allow precipitation of all crystals; cooling down the product followed by suction filtration, washing the obtained crystals by the solvent, so that crude cerium sulfate chelated sulfur dioxide can be obtained. The solubility of the cerium sulfate chelated sulfur dioxide of the disclosure has been significantly improved compared to the anhydrous cerium sulfate. The obtained solution is colorless and transparent, so that the cerium sulfate chelated sulfur dioxide can be used as a better titrant with wide application and supreme performance.

    MULTI-STABLE ELECTRORESPONSIVE SMART WINDOW AND PREPARATION METHOD THEREOF

    公开(公告)号:US20200326580A1

    公开(公告)日:2020-10-15

    申请号:US16498755

    申请日:2018-10-10

    Abstract: A multi-stable electroresponsive smart window and preparation method thereof are disclosed. The multi-stable electroresponsive smart window comprises a first light transmitting conductive substrate, a parallel orientation layer, a positive polymer stabilized cholesteric texture layer, a positive cholesteric texture layer and a second light transmitting conductive substrate disposed in stack successively. The multi-stable electroresponsive smart window of the present disclosure can realize a diversified light transmission state such as colored and transparent state, colored and blur state, colorless and blur state, and colorless and transparent state by changing the magnitude of the access voltage, thereby satisfying the various demands in people's work and life. In addition, the multi-stable electroresponsive smart window of the present disclosure has the characteristics of simple production, rich patterns, energy saving and environmental protection, which has good application prospects in the fields of window glass, home glass window and glass curtain wall, and the like.

    METHOD FOR PREPARING ELECTROWETTING DISPLAY SUPPORT PLATE

    公开(公告)号:US20200004009A1

    公开(公告)日:2020-01-02

    申请号:US16484882

    申请日:2017-11-15

    Abstract: A method for preparing an electrowetting display support plate (5), comprising the following steps: preparing a substrate (7) having an electrode layer; preparing a hydrophobic insulating layer (13) and pixel walls (20) on the substrate (7) having an electrode layer, the pixel walls (20) being made of a hydrophilic material; performing plasma etching on the substrate (7) having the pixel walls (20), the power of the plasma etching being 30-1,000 W/m2; and heating the substrate (7) subjected to the plasma etching, so as to recover the hydrophobicity of the hydrophobic insulating layer (13). According to the method, the technical bias that the display support plate (5) being treated by means of the plasma etching would influence the quality of the hydrophobic insulating layer (13) is eliminated.

    METHOD AND DEVICE FOR ELIMINATING IMAGE BORDER OF ELECTROPHORETIC ELECTRONIC PAPER

    公开(公告)号:US20190318695A1

    公开(公告)日:2019-10-17

    申请号:US16469892

    申请日:2017-11-08

    Abstract: A device and method for eliminating an image border of electrophoretic electronic paper includes the following steps: S1, acquiring gray-scale driving waveform information and gray-scale position information, wherein the driving waveform information comprises a level value and a duration corresponding thereof; S2, outputting regulation waveform information based on an termination level value of a first gray scale, a level duration and a starting level value of a second gray scale, wherein the regulation waveform information comprises a level value, an embedding time and an embedding position of a waveform; and S3, modifying the gray-scale driving waveform information based on the regulation waveform information, and controlling an output of a drive electrode based on the modified gray-scale driving waveform information. By using the device and method, an impact of the fringe electric field on movement of electronic paper micro-capsules is eliminated, thus effectively reducing border ghosting.

    CERIUM SULFATE CHELATED SULFUR DIOXIDE, A PREPARATION METHOD AND A USE THEREOF

    公开(公告)号:US20190185336A1

    公开(公告)日:2019-06-20

    申请号:US16094939

    申请日:2018-03-15

    CPC classification number: C01F17/0081 C01P2002/82 C01P2002/88

    Abstract: The disclosure discloses cerium sulfate chelated sulfur dioxide, a preparation method and a use thereof. The cerium sulfate chelated sulfur dioxide has a molecular formula of Ce[SO4][SO2].2H2O. It is a white crystal and the preparation method thereof may comprise the following steps: adding anhydrous cerium sulfate to dilute sulfuric acid with stirring for dissolvation; adding a solvent followed by refluxing at 45-50° C. for 2.0-2.5 h; heating the reaction product to remove the solvent, cooling to 20° C. or lower, and adding dilute sulfuric acid to allow precipitation of all crystals; cooling down the product followed by suction filtration, washing the obtained crystals by the solvent, so that crude cerium sulfate chelated sulfur dioxide can be obtained. The solubility of the cerium sulfate chelated sulfur dioxide of the disclosure has been significantly improved compared to the anhydrous cerium sulfate. The obtained solution is colorless and transparent, so that the cerium sulfate chelated sulfur dioxide can be used as a better titrant with wide application and supreme performance.

    FREQUENCY MULTIPLIER BASED ON A LOW DIMENSIONAL SEMICONDUCTOR STRUCTURE
    69.
    发明申请
    FREQUENCY MULTIPLIER BASED ON A LOW DIMENSIONAL SEMICONDUCTOR STRUCTURE 有权
    基于低尺寸半导体结构的频率乘法器

    公开(公告)号:US20160035837A1

    公开(公告)日:2016-02-04

    申请号:US14767301

    申请日:2014-03-25

    Inventor: Kunyuan Xu

    CPC classification number: H01L29/2003 H01L29/778 H03B19/14

    Abstract: A frequency multiplier based on a low dimensional semiconductor structure, including an insulating substrate layer, a semiconductor conducting layer arranged on the surface of the insulating substrate layer, an insulating protective layer arranged on the surface of the semiconductor conducting layer, an insulating carving groove penetrating the semiconductor conducting layer, an inlet electrode arranged on the side surface of the semiconductor conducting layer, and an outlet electrode arranged on the side surface corresponding to the access electrode is provided. The semiconductor conducting layer comprises two two-dimensional, quasi-one-dimensional, or one-dimensional current carrying channels near to and parallel to each other. The frequency multiplier has advantages that the structure is simple, the process is easy to implement, no extra filter circuit needs to be added, dependence on material characteristics is little, and the selection range of materials is wide.

    Abstract translation: 基于低维半导体结构的倍频器,包括绝缘基板层,布置在绝缘基板层的表面上的半导体导电层,布置在半导体导电层的表面上的绝缘保护层,穿透 设置半导体导电层,布置在半导体导电层的侧表面上的入口电极和布置在与存取电极相对应的侧表面上的出口电极。 半导体导电层包括彼此靠近并且彼此平行的两个二维,准一维或一维载流通道。 倍频器具有结构简单,易于实现的优点,不需要添加额外的滤波电路,材料特性依赖性小,材料选择范围广。

    SEMICONDUCTOR EPIAXIAL STRUCTURE AND LIGHT-EMITTING DEVICE THEREOF
    70.
    发明申请
    SEMICONDUCTOR EPIAXIAL STRUCTURE AND LIGHT-EMITTING DEVICE THEREOF 有权
    半导体光纤结构及其发光器件

    公开(公告)号:US20150340551A1

    公开(公告)日:2015-11-26

    申请号:US14130624

    申请日:2012-12-26

    Abstract: The present invention discloses an epiaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epiaxial structure, which similarly achieves the effects of reduced Auger recombination and/or decreased drain current through the trimming of the band edge shape of the energy band structure by the local built-in electric field, thereby improving internal quantum efficiency of the device.

    Abstract translation: 本发明公开了一种半导体发光器件的双轴结构,包括电子注入区,空穴注入区,多量子阱有源区,用于阻挡载流子的势垒层和一个或多个带边成形层。 所述带边缘成形层的掺杂类型和/或掺杂浓度与相邻层的掺杂类型和/或掺杂浓度不同。 其可以通过调整掺杂类型,掺杂浓度和/或层厚度而形成的局部内置电场来修整半导体能带的带边缘形状,使得多量子阱活性中的载流子 区域均匀分布,整个俄歇复合减小,阻挡载流子的势垒层的有效势垒高度增加,以减少由多量子阱有源区溢出的载流子形成的漏极电流,从而改善内部 量子效率。 本发明还公开了采用所述的双轴结构的半导体发光器件,其类似地实现了通过局部内置结构的能带结构的带边缘形状的修整来减小俄歇复合和/或降低的漏极电流的效果, 在电场中,从而提高器件的内部量子效率。

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