Methods of operating nonvolatile memory devices
    61.
    发明授权
    Methods of operating nonvolatile memory devices 有权
    操作非易失性存储设备的方法

    公开(公告)号:US08000148B2

    公开(公告)日:2011-08-16

    申请号:US12805501

    申请日:2010-08-03

    IPC分类号: G11C16/04

    CPC分类号: G11C16/34

    摘要: Methods of operating nonvolatile memory devices are provided. In a method of operating a nonvolatile memory device including a plurality of memory cells, recorded data is stabilized by inducing a boosting voltage on a channel of a memory cell in which the recorded data is recorded. The memory cell is selected from a plurality of memory cells and the boosting voltage on the channel of the selected memory cell is induced by a channel voltage of at least one memory cell connected to the selected memory cell.

    摘要翻译: 提供了非易失性存储器件的操作方法。 在操作包括多个存储单元的非易失性存储器件的方法中,通过在其中记录有记录数据的存储单元的通道上感应升压电压来稳定记录数据。 从多个存储单元中选择存储单元,并且所选存储单元的通道上的升压电压由连接到所选存储单元的至少一个存储单元的通道电压引起。

    Sump for dishwasher
    63.
    发明授权
    Sump for dishwasher 有权
    碗碟洗碗机

    公开(公告)号:US07922831B2

    公开(公告)日:2011-04-12

    申请号:US11701431

    申请日:2007-02-02

    IPC分类号: B08B3/00

    CPC分类号: A47L15/4204 A47L15/4225

    摘要: A sump for a dishwasher includes a sump case for collecting washing fluid, a pump housing on the sump case, a filtering assembly provided on an upper portion of the pump housing, and a sealing member disposed around the pump housing. The pump housing is provided with a pump case therein.

    摘要翻译: 用于洗碗机的贮槽包括用于收集洗涤流体的贮槽壳体,在贮槽壳体上的泵壳体,设置在泵壳体的上部上的过滤组件以及围绕泵壳体设置的密封构件。 泵壳体中设置有泵壳体。

    Semiconductor substrates and manufacturing methods of the same
    64.
    发明授权
    Semiconductor substrates and manufacturing methods of the same 有权
    半导体衬底及其制造方法相同

    公开(公告)号:US07902007B2

    公开(公告)日:2011-03-08

    申请号:US12219360

    申请日:2008-07-21

    IPC分类号: H01L21/84

    CPC分类号: H01L29/7841

    摘要: Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

    摘要翻译: 提供半导体基板及其制造方法。 半导体衬底包括衬底区域,绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离,并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案,通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域,以及填充绝缘体 在浮体区域和衬底区域之间的材料。

    Dishwasher and sound-insulation member therefor
    65.
    发明授权
    Dishwasher and sound-insulation member therefor 有权
    洗碗机和隔音构件

    公开(公告)号:US07867340B2

    公开(公告)日:2011-01-11

    申请号:US11862288

    申请日:2007-09-27

    IPC分类号: B08B3/02

    CPC分类号: A47L15/4209

    摘要: A dishwasher is provided which can reduce the discharge of noise produced by the dishwasher, thereby preventing a user from being upset due to the noise and achieving not only a comfortable use environment but also an improvement in productivity. With the dishwasher, it is possible to prevent the noise, caused during operation of the dishwasher, from being discharged from a lower side of a door, by use of a sound-insulation member with a simplified configuration. In the manufacture of the dishwasher, improved assembly productivity can be accomplished.

    摘要翻译: 提供了一种洗碗机,其可以减少由洗碗机产生的噪音的排放,从而防止使用者由于噪音而不舒服,并且不仅实现舒适的使用环境,而且提高生产率。 通过使用洗碗机,可以通过使用具有简化结构的隔音构件来防止在洗碗机操作期间引起的噪音从门的下侧排出。 在洗碗机的制造中,可以实现提高的组装生产率。

    Semiconductor apparatus
    66.
    发明授权
    Semiconductor apparatus 有权
    半导体装置

    公开(公告)号:US07847348B2

    公开(公告)日:2010-12-07

    申请号:US12382281

    申请日:2009-03-12

    摘要: Provided is a semiconductor apparatus including a substrate region, an active region on the substrate region, a gate pattern on the active region, and first and second impurities-doped regions along both edges of the active region that do not overlap the gate pattern. The length of the first and second impurities-doped regions in the horizontal direction may be shorter than in the vertical direction. The first and second impurities-doped regions may be formed to be narrow along both edges of the active region so as not to overlap the gate pattern.

    摘要翻译: 提供了一种半导体装置,其包括衬底区域,衬底区域上的有源区域,有源区域上的栅极图案,以及不与栅极图案重叠的有源区域沿着两个边缘的第一和第二杂质掺杂区域。 第一和第二杂质掺杂区域在水平方向上的长度可以比​​在垂直方向上短。 第一和第二杂质掺杂区域可以形成为沿着有源区域的两个边缘窄,以便不与栅极图案重叠。