公开(公告)号：US08922862B2

公开(公告)日：2014-12-30

申请号：US13642039

申请日：2011-02-17

申请人： Takeshi Honda ,  Nobuaki Takanashi

发明人： Takeshi Honda ,  Nobuaki Takanashi

IPC分类号： G02B26/08 ,  G02B26/10 ,  H02K33/16 ,  B81B3/00 ,  G02B7/182 ,  G02B27/10

CPC分类号： H02K33/16 ,  B81B3/0032 ,  B81B2201/042 ,  G02B7/1821 ,  G02B26/085 ,  G02B26/10 ,  G02B26/101 ,  G02B26/105 ,  G02B27/104

摘要： A magnetic force drive device (7) has the first movable part (100) and the first driving unit (200). The first movable part (100) has the first movable plate (111), and a permanent magnet (120) that is magnetized in a direction substantially parallel to the first movable plate (111), and is supported by the first frame body (112) and the first pair of beam parts (113), so as to be able to oscillate around the Y axis, which is substantially parallel to the first movable plate (111) and substantially perpendicular to the direction in which the permanent magnet (120) is magnetized. The first driving unit (200) has a yoke (210), and a coil (220) that magnetizes the yoke (210). The yoke (210) has the first end part (211a), and a second end part (212a) that is placed on substantially the opposite side of the first end part (211a) against one magnetic pole of the permanent magnet (120). The first end part (211a) and second end part (212a) are magnetized in mutually different polarities, and drive the first movable part (100) in the same oscillation direction.

摘要翻译： 磁力驱动装置（7）具有第一可动部（100）和第一驱动部（200）。 第一可移动部件（100）具有第一可动板（111）和在与第一可动板（111）基本平行的方向上被磁化的永磁体（120），并由第一框架体 ）和第一对梁部分（113），以便能够围绕基本上平行于第一可移动板（111）并且基本上垂直于永磁体（120）的方向的Y轴摆动， 被磁化。 第一驱动单元（200）具有磁轭（210）和使磁轭（210）磁化的线圈（220）。 磁轭（210）具有第一端部（211a）和第二端部（212a），该第二端部（212a）与第一端部（211a）的大致相对的一侧相对于永磁体（120）的一个磁极放置。 第一端部（211a）和第二端部（212a）以相互不同的极性被磁化，并且以相同的振荡方向驱动第一可动部（100）。

公开(公告)号：US20130278984A1

公开(公告)日：2013-10-24

申请号：US13996493

申请日：2012-02-27

申请人： Takeshi Honda ,  Nobuaki Takanashi

发明人： Takeshi Honda ,  Nobuaki Takanashi

IPC分类号： G02B26/10

CPC分类号： G02B26/10 ,  B81B7/0016 ,  B81B2201/042 ,  G02B26/0858 ,  G02B26/105

摘要： Optical scanning device 10 according to the present invention includes: plate-like movable mirror 11 having reflection surface 12 for reflecting light on one surface, and piezoelectric unit 13 including a plurality of piezoelectric elements on the other surface; a pair of torsionally deformable torsion beams 2 and 3 arranged opposite to each other at both ends of movable mirror 11 and swingably supporting movable mirror 11; driving units 4 and 5 for driving movable mirror 11 to oscillate; and compensating voltage application means 8 for applying a compensating voltage that is an alternating-current voltage to piezoelectric unit 13 when movable mirror 11 oscillates, thereby causing compensatory deformation in movable mirror 11 to compensate for deformation that occurs in movable mirror 11 due to the oscillation of movable mirror 11.

摘要翻译： 根据本发明的光学扫描装置10包括：具有用于在一个表面上反射光的反射表面12的板状可动反射镜11和在另一个表面上包括多个压电元件的压电单元13; 一对在可动镜11的两端彼此相对布置的可扭转的扭转梁2和3，以及可摆动支撑的可动镜11; 用于驱动可动镜11摆动的驱动单元4和5; 以及补偿电压施加装置8，用于当可动反射镜11摆动时向压电单元13施加作为交流电压的补偿电压，从而在可移动反射镜11中引起补偿变形，以补偿由于振荡而在可移动反射镜11中发生的变形 的可动镜11。

公开(公告)号：US20130063799A1

公开(公告)日：2013-03-14

申请号：US13642039

申请日：2011-02-17

申请人： Takeshi Honda ,  Nobuaki Takanashi

发明人： Takeshi Honda ,  Nobuaki Takanashi

IPC分类号： G02B26/10 ,  H02K33/16

CPC分类号： H02K33/16 ,  B81B3/0032 ,  B81B2201/042 ,  G02B7/1821 ,  G02B26/085 ,  G02B26/10 ,  G02B26/101 ,  G02B26/105 ,  G02B27/104

摘要： A magnetic force drive device (7) has the first movable part (100) and the first driving unit (200). The first movable part (100) has the first movable plate (111), and a permanent magnet (120) that is magnetized in a direction substantially parallel to the first movable plate (111), and is supported by the first frame body (112) and the first pair of beam parts (113), so as to be able to oscillate around the Y axis, which is substantially parallel to the first movable plate (111) and substantially perpendicular to the direction in which the permanent magnet (120) is magnetized. The first driving unit (200) has a yoke (210), and a coil (220) that magnetizes the yoke (210). The yoke (210) has the first end part (211a), and a second end part (212a) that is placed on substantially the opposite side of the first end part (211a) against one magnetic pole of the permanent magnet (120). The first end part (211a) and second end part (212a) are magnetized in mutually different polarities, and drive the first movable part (100) in the same oscillation direction.

摘要翻译： 磁力驱动装置（7）具有第一可动部（100）和第一驱动部（200）。 第一可移动部件（100）具有第一可动板（111）和在与第一可动板（111）基本平行的方向上被磁化的永磁体（120），并由第一框架体 ）和第一对梁部分（113），以便能够围绕基本上平行于第一可移动板（111）并且基本上垂直于永磁体（120）的方向的Y轴摆动， 被磁化。 第一驱动单元（200）具有磁轭（210）和使磁轭（210）磁化的线圈（220）。 磁轭（210）具有第一端部（211a）和第二端部（212a），该第二端部（212a）与第一端部（211a）的大致相对的一侧相对于永磁体（120）的一个磁极放置。 第一端部（211a）和第二端部（212a）以相互不同的极性被磁化，并且以相同的振荡方向驱动第一可动部（100）。

公开(公告)号：US20120129832A1

公开(公告)日：2012-05-24

申请号：US13388210

申请日：2010-08-04

申请人： Shigeo Yamanoi ,  Hidenori Namiki ,  Takahiro Katagiri ,  Mayuko Akiu ,  Katsuji Kagechika ,  Takeshi Honda ,  Koji Matsumoto ,  Ryutaro Nakashima

发明人： Shigeo Yamanoi ,  Hidenori Namiki ,  Takahiro Katagiri ,  Mayuko Akiu ,  Katsuji Kagechika ,  Takeshi Honda ,  Koji Matsumoto ,  Ryutaro Nakashima

IPC分类号： A61K31/5377 ,  C07D413/12 ,  A61P1/18 ,  A61P3/10 ,  A61P3/04 ,  C07D413/14 ,  A61K31/4245

CPC分类号： C07D413/12 ,  C07D271/06 ,  C07D413/14

摘要： Provided are a compound having an excellent hypoglycemic action, or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition having an excellent therapeutic effect and/or prophylactic effect on type 1 diabetes, type 2 diabetes, and the like, which cause an increase in the blood sugar level due to abnormal sugar metabolism. A compound represented by general formula (I), or a pharmaceutically acceptable salt thereof, is disclosed.

摘要翻译： 提供具有优异的降血糖作用的化合物或其药学上可接受的盐，以及对1型糖尿病，2型糖尿病等具有优异的治疗效果和/或预防效果的药物组合物，其引起增加 血糖水平由于糖代谢异常。 公开了由通式（I）表示的化合物或其药学上可接受的盐。

公开(公告)号：US07773405B2

公开(公告)日：2010-08-10

申请号：US12308062

申请日：2007-06-01

申请人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

发明人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

IPC分类号： G11C11/00

CPC分类号： G11C11/1659 ,  G11C11/1655 ,  G11C11/1675

摘要： A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current 1w is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.

摘要翻译： 磁性随机存取存储器包括：第一和第二布线，多个第三布线，多个存储单元和终端单元。 第一和第二布线沿Y方向延伸。 多个第三配线沿X方向延伸。 对应于第一和第二布线和第三布线之间的交叉点设置存储单元。 终端单元设置在多个存储单元之间并连接到第一和第二布线。 存储单元包括晶体管和磁阻元件。 晶体管串联连接在第一和第二布线之间，并根据第三布线的信号进行控制。 磁阻元件连接到晶体管连接到的布线。 在写入操作时，当写入电流1w通过晶体管从第一和第二布线中的一个提供给另一个时，端接单元接地。

公开(公告)号：US20100177558A1

公开(公告)日：2010-07-15

申请号：US12376925

申请日：2007-07-13

申请人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

发明人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

IPC分类号： G11C11/02 ,  G11C8/08 ,  G11C7/00

CPC分类号： G11C8/08 ,  G11C11/1659 ,  G11C11/1675

摘要： An MRAM of a spin transfer type according to the invention is provided with a memory cell 10 and a word driver 30. The memory cell 10 has a magnetic resistance element 1 and a selection transistor TR having one of source/drain electrodes which is connected with one end of the magnetic resistance element 1. The word driver 30 drives a word line WL connected with a gate electrode of the selection transistor TR. The word driver 30 changes a drive voltage of the word line WL according to the write data DW to be written in the magnetic resistance element 1.

摘要翻译： 根据本发明的自旋转移型的MRAM具有存储单元10和字驱动器30.存储单元10具有磁阻元件1和选择晶体管TR，其具有与源极/漏极电极 字驱动器30驱动与选择晶体管TR的栅极连接的字线WL。 字驱动器30根据要写入磁阻元件1的写数据DW改变字线WL的驱动电压。

公开(公告)号：US07688617B2

公开(公告)日：2010-03-30

申请号：US12083692

申请日：2006-10-17

申请人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

发明人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

IPC分类号： G11C11/02

CPC分类号： G06F11/1044 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2029/0411

摘要： An operation method of an MRAM of the present invention is an operation method of the MRAM in which a data write operation is carried out in a toggle write. The operation method of the present invention includes: (A) reading a data from a data cell by using a reference signal which is generated by using a reference cell; (B) performing an error detection on the read data; (C) correcting the data stored in the data cell, when an error is detected in the read data; (D) reading the data from the data cell as a first re-read data after the (C), when the error is detected in the read data, (E) performing the error detection on the first re-read data; (F) correcting the data stored in the reference cell, when an error is detected in the first re-read data; (G) reading the data from the data cell as a second re-read data after the (F), when the error is detected in the first re-read data; (H) performing the error detection on the second re-read data; and (I) correcting the data stored in the data cell again, when the error is detected in the second re-read data.

摘要翻译： 本发明的MRAM的操作方法是在切换写入中执行数据写入操作的MRAM的操作方法。 本发明的操作方法包括：（A）通过使用通过使用参考单元生成的参考信号从数据单元读取数据; （B）对所读取的数据执行错误检测; （C）当在读取数据中检测到错误时，校正存储在数据单元中的数据; （D）在（C）之后读取来自数据单元的数据作为第一重新读取数据，当在读取数据中检测到错误时，（E）对第一重新读取的数据执行错误检测; （F）当在所述第一重读数据中检测到错误时，校正存储在所述参考单元中的数据; （G）当在所述第一重新读取的数据中检测到所述错误时，读取来自所述数据单元的数据作为所述（F）之后的第二重新读取数据; （H）对所述第二再读数据执行所述错误检测; 以及（I）当在第二重新读取的数据中检测到错误时，再次校正存储在数据单元中的数据。

公开(公告)号：US20100067292A1

公开(公告)日：2010-03-18

申请号：US12085158

申请日：2006-11-07

申请人： Takeshi Honda

发明人： Takeshi Honda

IPC分类号： G11C5/14 ,  H02B1/24 ,  G11C11/14

CPC分类号： G11C5/147 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/1697 ,  Y10T307/826

摘要： A semiconductor integrated circuit is provided that can prevent an internal voltage from the voltage generating circuit from varying during a long term. The semiconductor integrated circuit of the present invention includes a voltage generating circuit configured to generate a reference voltage; a function circuit configured to operate by using the reference voltage; a first capacitance connected to a first node between the voltage generating circuit and the function circuit; and a switch provided between the voltage generating circuit and the first node. The switch is in a turned-off state at least for a period during which the function circuit is in an activated state.

摘要翻译： 提供一种可以防止来自电压产生电路的内部电压在长期内变化的半导体集成电路。 本发明的半导体集成电路包括：电压产生电路，被配置为产生参考电压; 功能电路，被配置为通过使用所述参考电压进行操作; 连接到所述电压产生电路和所述功能电路之间的第一节点的第一电容; 以及设置在电压产生电路和第一节点之间的开关。 至少在功能电路处于激活状态的期间，开关处于截止状态。

公开(公告)号：US20100046283A1

公开(公告)日：2010-02-25

申请号：US12303821

申请日：2007-06-01

申请人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

发明人： Noboru Sakimura ,  Takeshi Honda ,  Tadahiko Sugibayashi

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1673 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.

摘要翻译： 本发明的磁性随机存取存储器包括：沿第一方向延伸的多个第一布线和多条第二布线; 多个第三布线和沿第二方向延伸的多个第四布线; 以及多个存储单元，分别设置在所述多个第一布线和所述多个第三布线的交点处。 所述多个存储单元中的每一个包括：第一晶体管和第二晶体管，其串联连接在所述多个第一布线中的一个与所述多个第二布线中的一个之间，并响应于所述多个第三布线之一上的信号而被控制 第一磁阻元件，其一端连接到第一晶体管和第二晶体管连接的写入布线，另一端接地; 以及第二磁阻元件，其一端连接到写入布线，另一端连接到第四布线。

公开(公告)号：US07630234B2

公开(公告)日：2009-12-08

申请号：US12066926

申请日：2006-09-07

申请人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

发明人： Tadahiko Sugibayashi ,  Takeshi Honda ,  Noboru Sakimura

IPC分类号： G11C11/14

CPC分类号： B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693

摘要： An MRAM having a first cell array group (2-0)and a second cell array group (2-1) containing a plurality of cell arrays (21) is used. Each of the first cell array group (2-0) and the second cell array group (2-1) includes a first current source unit for supplying a first write current IWBL to a bit line WBL of the cell array (21) and a first current waveform shaping unit having a first capacitor requiring precharge and shaping the waveform of the first write current IWBL. When the cell array (21) performs write into a magnetic memory (24), the first current waveform shaping unit of the first cell array group (2-0) and the first current waveform shaping unit of the second cell array group (2-1) charges and discharges electric charge accumulated in the first capacitor to wiring toward the bit line WBL at different periods from each other.

摘要翻译： 使用具有包含多个单元阵列（21）的第一单元阵列组（2-0）和第二单元阵列组（2-1）的MRAM。 第一单元阵列组（2-0）和第二单元阵列组（2-1）中的每一个包括用于将第一写入电流IWBL提供给单元阵列（21）的位线WBL的第一电流源单元和 第一电流波形整形单元，其具有需要预充电的第一电容器并且对第一写入电流IWBL的波形进行整形。 当单元阵列（21）对磁存储器（24）进行写入时，第一单元阵列组（2-0）的第一电流波形整形单元和第二单元阵列组（2- 1）对在第一电容器中累积的电荷进行充电和放电，以不同的周期向位线WBL布线。