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    Crystallized semicoductor thin film manufacturing method and its manufacturing apparatus
    63.
    发明申请
    Crystallized semicoductor thin film manufacturing method and its manufacturing apparatus 审中-公开
    结晶半导体薄膜制造方法及其制造装置

    公开(公告)号：US20060154456A1

    公开(公告)日：2006-07-13

    申请号：US10542447

    申请日：2004-01-13

    申请人： Yoshihiro Taniguchi ,  Hiroshi Tsunazawa ,  Shinya Okazaki ,  Tetsuya Inui

    发明人： Yoshihiro Taniguchi ,  Hiroshi Tsunazawa ,  Shinya Okazaki ,  Tetsuya Inui

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268

    摘要： A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film (5), the semiconductor thin film (5) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam (6) and a sub beam (7), having smaller energy per unit area than that of the main beam (6), which adjoins the main beam (6), being irradiated to the semiconductor thin film (5).

    摘要翻译： 晶体化半导体薄膜的制造方法为：通过对半导体薄膜（5）进行微细狭缝形状的能量束的脉冲照射，能量束的区域的半导体薄膜（5） 照射的整个区域在厚度方向上熔化固化，结晶化，主梁（6）和副梁（7）的单位面积的能量比主梁（6）的能量小，其中 邻接主梁（6），照射到半导体薄膜（5）。

    Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
    67.
    发明申请
    Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus 审中-公开
    制造半导体薄膜的方法和半导体薄膜制造装置

    公开(公告)号：US20050272185A1

    公开(公告)日：2005-12-08

    申请号：US11147641

    申请日：2005-06-07

    申请人： Masanori Seki ,  Yoshihiro Taniguchi ,  Tetsuya Inui

    发明人： Masanori Seki ,  Yoshihiro Taniguchi ,  Tetsuya Inui

    IPC分类号： H01L21/20 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

    CPC分类号： H01L21/02675 ,  C30B13/24 ,  C30B29/06 ,  H01L21/2026 ,  H01L27/1214 ,  H01L29/78672 ,  Y10T117/10

    摘要： A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.

    摘要翻译： 一种包含多晶半导体区域的半导体薄膜的制造方法，其通过用至少两种类型的激光束照射前体半导体薄膜，并对前体半导体薄膜进行熔融再结晶，其中前体半导体薄膜用预定的 参考激光束，并且根据用参考激光束照射的部位的反射率的变化来控制激光束的发射时间或功率密度。 一种在本发明的制造方法中使用的半导体薄膜制造装置，其包括至少两个光源，感测单元和控制单元。 形成的晶体由于每个辐射能量的变化引起的晶体长度没有差异。

    Exposure device and image forming device
    68.
    发明申请
    Exposure device and image forming device 失效
    曝光装置和成像装置

    公开(公告)号：US20050151824A1

    公开(公告)日：2005-07-14

    申请号：US10501509

    申请日：2003-01-09

    申请人： Tadashi Iwamatsu ,  Shigeru Nishio ,  Tetsuya Inui

    发明人： Tadashi Iwamatsu ,  Shigeru Nishio ,  Tetsuya Inui

    IPC分类号： B41J2/44 ,  B41J2/447 ,  B41J2/45 ,  B41J2/455 ,  G02B6/122 ,  H01L51/50 ,  H04N1/036 ,  H05B33/00 ,  B41J2/435

    CPC分类号： B41J2/45

    摘要： An emissive element array of a plurality of organic EL elements is arranged linearly on a single-crystal silicon substrate or polycrystalline silicon substrate with a drive circuit including an element switching its respective emissive element. The organic EL emissive elements have an edge emitting structure utilizing light emitted in an edge direction perpendicular to the direction of deposition of electrode layers and organic compound layers, and is constructed such that the emitting area of one emissive element, S, as viewed in the direction of deposition, and the period of emissive elements disposed side by side, d, have the relationship of S>d2. In this way, organic EL techniques can be applied to provide the required amount of light exposure and to produce an exposure device that is small and inexpensive.

    摘要翻译： 多个有机EL元件的发射元件阵列线性地布置在单晶硅衬底或多晶硅衬底上，其中驱动电路包括切换其各自发射元件的元件。 有机EL发光元件具有利用沿垂直于电极层和有机化合物层的沉积方向的边缘方向发射的光的边缘发射结构，并且被构造成使得在一个发射元件S的发射面积 沉积方向和并排设置的发射元件的周期d具有S> d <2>的关系。 以这种方式，可以应用有机EL技术来​​提供所需量的曝光并且产生小而便宜的曝光装置。