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80 条记录 (耗时 0.069 秒)

    Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
    2.
    发明申请
    Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same 审中-公开
    半导体装置及其制造方法及其制造装置

    公开(公告)号：US20080237593A1

    公开(公告)日：2008-10-02

    申请号：US11794874

    申请日：2006-01-06

    申请人： Junichiro Nakayama ,  Ikumi Itsumi ,  Tetsuya Inui

    发明人： Junichiro Nakayama ,  Ikumi Itsumi ,  Tetsuya Inui

    IPC分类号： H01L29/04 ,  H01L21/00 ,  H01S3/098

    CPC分类号： H01L21/0268 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532

    摘要： There is provided a semiconductor device including a substrate and a semiconductor film deposited on the substrate, characterized in that the semiconductor film has a laterally grown crystal having an end with a surface projection height smaller than the thickness of the semiconductor film. There are also provided a semiconductor device fabrication method and apparatus utilizing a method and apparatus for fabricating the semiconductor device, that is capable of reducing a surface projection height or a ridge formed in a last region in repeating laser exposure in the SLS method, and a semiconductor device fabricated thereby.

    摘要翻译： 提供了一种半导体器件，其包括沉积在衬底上的衬底和半导体膜，其特征在于，所述半导体膜具有横向生长的晶体，其端部的表面突出高度小于半导体膜的厚度。 还提供了一种半导体器件制造方法和装置，其利用半导体器件的制造方法和装置，其能够减少在SLS方法中重复激光曝光的最后区域中形成的表面突出高度或脊， 由此制造半导体器件。

    Crystallized semiconductor device, method for producing same and crystallization apparatus
    3.
    发明申请
    Crystallized semiconductor device, method for producing same and crystallization apparatus 审中-公开
    结晶半导体器件及其制造方法及结晶装置

    公开(公告)号：US20060183303A1

    公开(公告)日：2006-08-17

    申请号：US10542663

    申请日：2004-01-19

    申请人： Tetsuya Inui ,  Hiroshi Tsunazawa ,  Shinya Okazaki

    发明人： Tetsuya Inui ,  Hiroshi Tsunazawa ,  Shinya Okazaki

    IPC分类号： H01L21/84 ,  C30B11/00 ,  H01L21/20

    CPC分类号： H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  Y10T117/1024

    摘要： In a method of manufacturing a crystallized semiconductor device of the present invention, a thermal diffusion layer (1) having higher thermal conductivity than that of a substrate (4) is formed on a surface of a semiconductor layer (2), and then laser light is applied to the semiconductor layer (2) from above the thermal diffusion layer (1). As a result, it becomes possible to manufacture the crystallized semiconductor device in which a crystal is longer than that of a conventional arrangement. According to the present invention, it is possible to provide the crystallized semiconductor device having the semiconductor layer in which the size of the crystal grain is larger than that of the conventional arrangement.

    摘要翻译： 在制造本发明的结晶化半导体器件的方法中，在半导体层（2）的表面上形成热导率高于衬底（4）的热扩散层（1），然后将激光 从热扩散层（1）的上方施加到半导体层（2）。 结果，可以制造晶体长于常规布置的晶体化半导体器件。 根据本发明，可以提供具有其中晶粒尺寸大于常规布置的半导体层的结晶半导体器件。

    Optical memory having narrowed track pitch
    5.
    发明授权
    Optical memory having narrowed track pitch 失效
    具有窄轨道间距的光学存储器

    公开(公告)号：US5586109A

    公开(公告)日：1996-12-17

    申请号：US354457

    申请日：1994-12-12

    申请人： Tetsuya Inui ,  Akira Takahashi ,  Kenji Ohta ,  Michinobu Mieda ,  Yoshiteru Murakami

    发明人： Tetsuya Inui ,  Akira Takahashi ,  Kenji Ohta ,  Michinobu Mieda ,  Yoshiteru Murakami

    IPC分类号： G11B7/0045 ,  G11B7/007 ,  G11B7/09 ,  G11B7/24 ,  G11B7/26 ,  G11B11/105 ,  G11B3/70

    CPC分类号： G11B7/261 ,  G11B11/10582 ,  G11B7/24 ,  G11B7/24079 ,  G11B7/26 ,  G11B7/00454 ,  G11B7/007 ,  G11B7/0938

    摘要： A transparent substrate of an optical memory is produced by injection molding using a stamper. Grooves and lands are alternately arranged on the optical memory, for tracking of light converged on the optical memory. The groove width is set in the range of 0.3 .mu.m to 0.4 .mu.m and the groove depth is set in the rage of 80 nm to 100 nm. A decrease in the width of a land at each edge is restrained to 0.2 .mu.m in maximum. With such dimensions, even when the track pitch is set to about 1.4 .mu.m, it is possible to obtain a track crossing signal with intensity sufficient for performing an access operation to a target track. Moreover, since the dimensions bring about an improved reflectance at a land, the optical memory achieves an improved C/N and recording density.

    摘要翻译： 通过使用压模的注射成型制造光学存储器的透明基板。 沟槽和焊盘交替布置在光学存储器上，用于跟踪会聚在光学存储器上的光。 槽宽度设定在0.3μm〜0.4μm的范围内，槽深度设定在80nm〜100nm的范围内。 每个边缘的陆地宽度减小最大限制在0.2亩。 利用这样的尺寸，即使当轨道间距设置为大约1.4μm时，也可以获得具有足以对目标轨道进行访问操作的强度的轨迹交叉信号。 此外，由于尺寸在陆地上产生改进的反射率，所以光学存储器实现了改进的C / N和记录密度。

    Optical memory disc
    10.
    发明授权
    Optical memory disc 失效
    光存储盘

    公开(公告)号：US4658393A

    公开(公告)日：1987-04-14

    申请号：US671865

    申请日：1984-11-15

    申请人： Kenji Ohta ,  Akira Takahashi ,  Tetsuya Inui ,  Takao Hyuga ,  Hideyoshi Yamaoka

    发明人： Kenji Ohta ,  Akira Takahashi ,  Tetsuya Inui ,  Takao Hyuga ,  Hideyoshi Yamaoka

    IPC分类号： G11B7/24 ,  G11B7/26 ,  G11B23/00 ,  G11B3/70

    CPC分类号： G11B7/26 ,  G11B23/0035 ,  G11B7/24

    摘要： An optical memory disc includes a glass substrate on which a plurality of concentric circular guide grooves (or a spiral groove) are formed for tracking purposes. A centering plate is secured to the glass substrate in a manner that the center of a circular opening formed in the centering plate is exactly adjusted to the center of the plurality of concentric circular guide grooves (spiral groove). The circular opening formed in the centering plate is utilized to drive the optical memory disc on a turntable. Since the circular opening is not formed directly in the glass substrate, the center adjustment is easily conducted, and there is no possibility that the glass substrate is damaged when the circular opening is formed.

    摘要翻译： 光存储盘包括玻璃基板，其上形成有用于跟踪目的的多个同心圆形导向槽（或螺旋槽）。 中心板以将中心盘中形成的圆形开口的中心精确地调整到多个同心圆形导向槽（螺旋槽）的中心的方式固定到玻璃基板。 在定心板上形成的圆形开口用于驱动旋转台上的光学存储盘。 由于圆形开口不直接形成在玻璃基板中，因此容易进行中心调整，并且在形成圆形开口时玻璃基板不可能被损坏。