Umos-like gate-controlled thyristor structure for ESD protection
    61.
    发明授权
    Umos-like gate-controlled thyristor structure for ESD protection 有权
    类似Umos的栅极控制晶闸管结构,用于ESD保护

    公开(公告)号:US06555878B2

    公开(公告)日:2003-04-29

    申请号:US10233764

    申请日:2002-09-03

    IPC分类号: H01L2362

    CPC分类号: H01L27/0262 H01L29/7436

    摘要: Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide—similar to a field oxide—under the poly gate.

    摘要翻译: 描述了具有用于IC器件中的ESD保护电路的U形门(UMOS)的MOS栅极控制SCR(UGSCR)结构,其与浅沟槽隔离(STI)和自对准硅化物(自对准硅)制造技术相兼容 。 UMOS门位于p基板中,并且被两侧的n阱包围。 邻近UMOS门的一侧,形成跨越第一n阱的第一n +扩散。 n +扩散以及旁边扩散的p +拾取器形成SCR(晶闸管)的阴极。 在UMOS门的另一侧附近,在第二n阱中形成第二n +和p +扩散。 第二个n +和p +扩散与UMOS门一起形成SCR的阳极和要保护的电路的输入端。 SCR由第一n +扩散/ n阱(阴极),p衬底,第二n阱和第二p + / n +扩散(阳极)形成。 闭锁免疫电路通过在聚栅下形成一个衬有厚栅极氧化物(类似于场氧化物)的U形门结构来实现。

    UMOS-like gate-controlled thyristor structure for ESD protection
    62.
    发明授权
    UMOS-like gate-controlled thyristor structure for ESD protection 失效
    类似UMOS的门控晶闸管结构,用于ESD保护

    公开(公告)号:US06458632B1

    公开(公告)日:2002-10-01

    申请号:US09814478

    申请日:2001-03-14

    IPC分类号: H01L21332

    CPC分类号: H01L27/0262 H01L29/7436

    摘要: Described is a method of creating a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide—similar to a field oxide—under the poly gate.

    摘要翻译: 描述了一种用于在IC器件中的用于ESD保护电路的U形栅极(UMOS)的MOS栅极控制SCR(UGSCR)结构的方法,其与浅沟槽隔离(STI)和自对准硅化物(STI)兼容 自杀)制造技术。 UMOS门位于p基板中,并且被两侧的n阱包围。 邻近UMOS门的一侧,形成跨越第一n阱的第一n +扩散。 n +扩散以及旁边扩散的p +拾取器形成SCR(晶闸管)的阴极。 在UMOS门的另一侧附近,在第二n阱中形成第二n +和p +扩散。 第二个n +和p +扩散与UMOS门一起形成SCR的阳极和要保护的电路的输入端。 SCR由第一n +扩散/ n阱(阴极),p衬底,第二n阱和第二p + / n +扩散(阳极)形成。 闭锁免疫电路通过在聚栅下形成一个衬有厚栅极氧化物(类似于场氧化物)的U形门结构来实现。

    Method for selecting policy decision functional entity in a resource and admission control system
    64.
    发明授权
    Method for selecting policy decision functional entity in a resource and admission control system 有权
    在资源和准入控制系统中选择策略决策功能实体的方法

    公开(公告)号:US08381261B2

    公开(公告)日:2013-02-19

    申请号:US12865130

    申请日:2008-05-21

    IPC分类号: G06F21/00

    摘要: The present invention discloses a method for selecting policy decision functional entity in the Resource and Admission Control System. The method includes that: for resource and admission control in the PULL mode, after the Transport Resource Control Function Entity (TRC-FE) receives a resource request message from the Customer Premises Equipment (CPE) or after the Policy Enforcement Function Entity (PE-FE) receives a transport layer signaling sent by CPE, if the TRC-FE or PE-FE is interacting with more than one Policy Decision Functional Entities (PD-FEs), the TRC-FE or the PE-FE may select a PD-FE according to the stored identification information of PD-FE or statically configured PD-FE, and send a resource decision request message to the selected PD-FE. With the application of the present invention, in resource and admission control in the PULL mode, after receiving the resource request initiated by CPE through the transport layer signaling message, the TRC-FE or PE-FE may select the exact PD-FE to implement the resource reservation process, thereby resolving the problem in prior art that during the resource and admission control process the TRC-FE or PE-FE can not select the exact PD-FE to send resource decision requests.

    摘要翻译: 本发明公开了一种在资源和准入控制系统中选择策略决策功能实体的方法。 该方法包括:在传输资源控制功能实体(TRC-FE)接收到来自客户驻地设备(CPE)的资源请求消息或策略执行功能实体(PE- FE)接收CPE发送的传输层信令,如果TRC-FE或PE-FE与多个策略决策功能实体(PD-FE)进行交互,则TRC-FE或PE-FE可以选择PD- FE根据存储的PD-FE的标识信息或静态配置的PD-FE,并向所选择的PD-FE发送资源决策请求消息。 随着本发明的应用,在PULL模式的资源和准入控制中,TRC-FE或PE-FE在接收到CPE通过传输层信令消息发起的资源请求后,可以选择准确的PD-FE来实现 资源预留处理,从而解决现有技术中的问题,在资源和准入控制处理期间,TRC-FE或PE-FE不能选择确切的PD-FE来发送资源决策请求。

    System and a Method for Resource Access Control
    65.
    发明申请
    System and a Method for Resource Access Control 审中-公开
    系统和资源访问控制方法

    公开(公告)号:US20100329266A1

    公开(公告)日:2010-12-30

    申请号:US12747132

    申请日:2008-05-21

    IPC分类号: H04L12/28

    摘要: The present invention discloses a system and a method for resource access control. In the system, a resource access control function entity comprises path selection function means, which is configured to set a QoS policy and select a path meeting the QoS requirement for a service flow based on set QoS policy. In the present invention, by adding the path selection function means and selecting the path using the path selection function means, the x-RACF has the QoS policy based function of path selection and resource control for the service flow accessing to an access network, and thus the QoS guarantee capability of the NGN service is strengthened.

    摘要翻译: 本发明公开了一种用于资源访问控制的系统和方法。 在该系统中,资源访问控制功能实体包括路径选择功能装置,其被配置为基于设置的QoS策略来设置QoS策略并选择满足服务流的QoS要求的路径。 在本发明中,通过添加路径选择功能单元,并且使用路径选择功能单元来选择路径,x-RACF具有基于QoS策略的路径选择和资源控制功能,用于访问接入网络的业务流,以及 从而加强了NGN业务的QoS保证能力。

    Method for resource and admission control
    66.
    发明申请
    Method for resource and admission control 有权
    资源和准入控制方法

    公开(公告)号:US20100287612A1

    公开(公告)日:2010-11-11

    申请号:US12863599

    申请日:2008-06-06

    申请人: Mo Sun Jun Song

    发明人: Mo Sun Jun Song

    IPC分类号: H04L9/00

    CPC分类号: H04L47/782

    摘要: The present invention discloses a method for resource and admission control, which relates to the communication field. The method of the present invention includes the following steps: during the process of the service authorization of resource and admission control in the PULL mode, the policy decision function entity (PD-FE) performs the QoS resource authorization for the service request, then informs the authorization information of the authorized service flow to the Policy Execute Function Entity (PE-FE); after the PE-FE receives the authorization information, the association relationship between the PD-FE and the authorization information of the authorized service flow is established; during the process of resource reservation of the authorized service flow initiated by the Customer Premises Equipment (CPE), the PE-FE selects the PD-FE according to the above mentioned corresponding relationship, and interacts with the PD-FE. The method of the present invention enables PE-FE or TRC-FE to select to implement the process of resource reservation request for the is PD-FE authorized by the service flow that initiates the resource reservation request, after receiving the resource reservation request of the service flow.

    摘要翻译: 本发明公开了一种与通信领域相关的资源和准入控制方法。 本发明的方法包括以下步骤:在PULL模式下资源和准入控制的业务授权过程中,策略决策功能实体(PD-FE)对服务请求进行QoS资源授权,然后通知 授权服务流向策略执行功能实体(PE-FE)的授权信息; PE-FE收到授权信息后,建立PD-FE与授权业务流程授权信息的关联关系; 在由客户驻地设备(CPE)发起的授权业务流的资源预留过程中,PE-FE根据上述对应关系选择PD-FE,并与PD-FE进行交互。 本发明的方法使得PE-FE或TRC-FE能够选择实现资源预留请求的过程,即在接收资源预留请求的资源预留请求之后,由发起资源预留请求的业务流授权的PD-FE 服务流程。

    High repetition rate laser produced plasma EUV light source

    公开(公告)号:US20080197297A1

    公开(公告)日:2008-08-21

    申请号:US11471434

    申请日:2006-06-20

    IPC分类号: G01J3/10

    摘要: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

    METHOD AND APPARATUS FOR OPTIMIZED ASSIGNMENT OF ABIS TRANSMISSION RESOURCES BASED ON DYNAMIC STATISTICAL TIME DIVISION MULTIPLEXING
    68.
    发明申请
    METHOD AND APPARATUS FOR OPTIMIZED ASSIGNMENT OF ABIS TRANSMISSION RESOURCES BASED ON DYNAMIC STATISTICAL TIME DIVISION MULTIPLEXING 有权
    基于动态统计时间分段多路复用的ABIS传输资源优化分配方法与装置

    公开(公告)号:US20070177543A1

    公开(公告)日:2007-08-02

    申请号:US11627031

    申请日:2007-01-25

    IPC分类号: H04Q7/00

    摘要: The present invention relates to technique for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing, the method comprising the steps of: assigning a set of 64 k TS's to GPRS/EGPRS services on an Abis link, the set of 64 k TS's shared among all BTS's connected to the Abis interface; a PCU assigning sufficient Abis transmission resources to a TRX based on the load thereof if the TRX has EGPRS services; a BSC interconnecting Abis transmission resources and BSC-PCU transmission resources and informing a BTS that said Abis transmission resources have been assigned to a TRE mapped to the TRX; the PCU reassigning bandwidth of the Abis transmission resources based on changes in the load of the TRX; in each TRX, all RTS's statistical-time-division-multiplexing all transmission resources of the TRX based on flow in different periods for different RTS's. The present invention will achieve dynamic sharing of Abis transmission resources on a RTS layer so as to optimize using of Abis transmission resources, reduce waste and decrease operating cost.

    摘要翻译: 本发明涉及基于动态统计时分复用来优化Abis传输资源分配的技术,该方法包括以下步骤:在一个Abis链路上将一组64k TS分配给GPRS / EGPRS业务,该组64k TS在所有BTS与Abis接口之间共享; 如果TRX具有EGPRS服务,则PCU根据其负载向TRX分配足够的Abis传输资源; BSC互连Abis传输资源和BSC-PCU传输资源,并通知BTS所述Abis传输资源已被分配给映射到TRX的TRE; PCU根据TRX的负载变化重新分配Abis传输资源的带宽; 在每个TRX中,所有RTS的统计时分复用TRX的所有传输资源都是基于不同时段的不同RTS的流。 本发明将实现RTS层上Abis传输资源的动态共享,从而优化Abis传输资源的使用,减少浪费并降低运营成本。

    Dual-deck optical disc system and method of controlling the same
    69.
    发明申请
    Dual-deck optical disc system and method of controlling the same 审中-公开
    双层光盘系统及其控制方法

    公开(公告)号:US20070036049A1

    公开(公告)日:2007-02-15

    申请号:US11498132

    申请日:2006-08-03

    IPC分类号: G11B20/00

    摘要: A dual-deck optical disc system and a method of controlling the dual-deck optical disc system enable data to be simultaneously recorded and reproduced. The dual-deck optical disc system may include a plurality of decks operable to record data on and reproduce data from optical discs mounted in the plurality of decks; and a controller that controls the plurality of decks to record an external signal on a first optical disc of the optical discs while reproducing data from a second optical disc of the optical discs.

    摘要翻译: 双层光盘系统和控制双层光盘系统的方法使数据能够被同时记录和再生。 双层光盘系统可以包括可操作以在安装在多个甲板中的光盘上记录数据并从其再现数据的多个甲板; 以及控制器,其在从所述光盘的第二光盘再现数据的同时,控制所述多个记录板在所述光盘的第一光盘上记录外部信号。

    Method of manufacturing ESD protection structure
    70.
    发明授权
    Method of manufacturing ESD protection structure 失效
    制造ESD保护结构的方法

    公开(公告)号:US06855609B2

    公开(公告)日:2005-02-15

    申请号:US10670918

    申请日:2003-09-24

    IPC分类号: H01L27/02 H01L21/336

    摘要: A transistor structure is manufactured for ESD protection in an integrated circuit device. A semiconductor substrate has source and drain diffusion regions and respective source and drain wells under the source and drain diffusion regions. A shallow trench isolation formed over the semiconductor substrate and into the semiconductor substrate separates the source and drain diffusion regions and a portion of the source and drain wells. Source and drain contact structures respectively formed on the shallow trench isolation over the source and drain diffusion regions and extend through the shallow trench isolation to contact the source and drain diffusion regions. An ion implantation is performed through the contact openings into the bottoms of the source and drain wells to control the device trigger voltage and position the discharge current far away from the surface, which increases the device ESD performance significantly.

    摘要翻译: 在集成电路器件中制造用于ESD保护的晶体管结构。 半导体衬底具有源极和漏极扩散区域以及源极和漏极扩散区域下的源极和漏极阱。 形成在半导体衬底上并进入半导体衬底的浅沟槽隔离件分离源极和漏极扩散区域以及源极和漏极阱的一部分。 源极和漏极接触结构分别形成在源极和漏极扩散区上的浅沟槽隔离上,并延伸穿过浅沟槽隔离以接触源极和漏极扩散区域。 通过接触开口进入离子注入到源阱和漏极的底部,以控制器件触发电压并将放电电流定位远离表面,从而显着提高器件ESD性能。