摘要:
Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide—similar to a field oxide—under the poly gate.
摘要:
Described is a method of creating a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide—similar to a field oxide—under the poly gate.
摘要:
A method for increasing aroma and reducing fungal growth in vegetables and fruits is described. The method uses hexanal in a controlled atmosphere to treat the harvested fruit. The method has been found to be particularly effective for Penicillium sp. and Botrytis sp.
摘要:
The present invention discloses a method for selecting policy decision functional entity in the Resource and Admission Control System. The method includes that: for resource and admission control in the PULL mode, after the Transport Resource Control Function Entity (TRC-FE) receives a resource request message from the Customer Premises Equipment (CPE) or after the Policy Enforcement Function Entity (PE-FE) receives a transport layer signaling sent by CPE, if the TRC-FE or PE-FE is interacting with more than one Policy Decision Functional Entities (PD-FEs), the TRC-FE or the PE-FE may select a PD-FE according to the stored identification information of PD-FE or statically configured PD-FE, and send a resource decision request message to the selected PD-FE. With the application of the present invention, in resource and admission control in the PULL mode, after receiving the resource request initiated by CPE through the transport layer signaling message, the TRC-FE or PE-FE may select the exact PD-FE to implement the resource reservation process, thereby resolving the problem in prior art that during the resource and admission control process the TRC-FE or PE-FE can not select the exact PD-FE to send resource decision requests.
摘要:
The present invention discloses a system and a method for resource access control. In the system, a resource access control function entity comprises path selection function means, which is configured to set a QoS policy and select a path meeting the QoS requirement for a service flow based on set QoS policy. In the present invention, by adding the path selection function means and selecting the path using the path selection function means, the x-RACF has the QoS policy based function of path selection and resource control for the service flow accessing to an access network, and thus the QoS guarantee capability of the NGN service is strengthened.
摘要:
The present invention discloses a method for resource and admission control, which relates to the communication field. The method of the present invention includes the following steps: during the process of the service authorization of resource and admission control in the PULL mode, the policy decision function entity (PD-FE) performs the QoS resource authorization for the service request, then informs the authorization information of the authorized service flow to the Policy Execute Function Entity (PE-FE); after the PE-FE receives the authorization information, the association relationship between the PD-FE and the authorization information of the authorized service flow is established; during the process of resource reservation of the authorized service flow initiated by the Customer Premises Equipment (CPE), the PE-FE selects the PD-FE according to the above mentioned corresponding relationship, and interacts with the PD-FE. The method of the present invention enables PE-FE or TRC-FE to select to implement the process of resource reservation request for the is PD-FE authorized by the service flow that initiates the resource reservation request, after receiving the resource reservation request of the service flow.
摘要:
An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
摘要:
The present invention relates to technique for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing, the method comprising the steps of: assigning a set of 64 k TS's to GPRS/EGPRS services on an Abis link, the set of 64 k TS's shared among all BTS's connected to the Abis interface; a PCU assigning sufficient Abis transmission resources to a TRX based on the load thereof if the TRX has EGPRS services; a BSC interconnecting Abis transmission resources and BSC-PCU transmission resources and informing a BTS that said Abis transmission resources have been assigned to a TRE mapped to the TRX; the PCU reassigning bandwidth of the Abis transmission resources based on changes in the load of the TRX; in each TRX, all RTS's statistical-time-division-multiplexing all transmission resources of the TRX based on flow in different periods for different RTS's. The present invention will achieve dynamic sharing of Abis transmission resources on a RTS layer so as to optimize using of Abis transmission resources, reduce waste and decrease operating cost.
摘要:
A dual-deck optical disc system and a method of controlling the dual-deck optical disc system enable data to be simultaneously recorded and reproduced. The dual-deck optical disc system may include a plurality of decks operable to record data on and reproduce data from optical discs mounted in the plurality of decks; and a controller that controls the plurality of decks to record an external signal on a first optical disc of the optical discs while reproducing data from a second optical disc of the optical discs.
摘要:
A transistor structure is manufactured for ESD protection in an integrated circuit device. A semiconductor substrate has source and drain diffusion regions and respective source and drain wells under the source and drain diffusion regions. A shallow trench isolation formed over the semiconductor substrate and into the semiconductor substrate separates the source and drain diffusion regions and a portion of the source and drain wells. Source and drain contact structures respectively formed on the shallow trench isolation over the source and drain diffusion regions and extend through the shallow trench isolation to contact the source and drain diffusion regions. An ion implantation is performed through the contact openings into the bottoms of the source and drain wells to control the device trigger voltage and position the discharge current far away from the surface, which increases the device ESD performance significantly.