公开(公告)号：US20210132428A1

公开(公告)日：2021-05-06

申请号：US16639786

申请日：2019-01-03

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenjun XIAO ,  Shijun WANG ,  Hehe HU ,  Haoliang ZHENG ,  Xi CHEN ,  Xiaochuan CHEN ,  Guangcai YUAN

IPC: G02F1/1343 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362

Abstract: A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.

公开(公告)号：US20210091223A1

公开(公告)日：2021-03-25

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Shuilang DONG ,  Wenhua WANG ,  Nianqi YAO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

公开(公告)号：US20180108759A1

公开(公告)日：2018-04-19

申请号：US15720070

申请日：2017-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke WANG ,  Hehe HU

IPC: H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/7869

Abstract: A thin film transistor, a fabrication method thereof, and an array substrate are provided. The fabrication method includes: forming a semiconductor layer and a photoresist layer on a substrate, dividing the substrate, the semiconductor layer and the photoresist layer into a first, second and third regions; performing ladder exposure on the photoresist layer, then developing, completely removing the photoresist layer of the first region and partly removing the photoresist layer of the second region; removing the semiconductor layer of the first region, and forming a pattern including an active region; thinning the photoresist layer: completely removing the photoresist layer of the second region, and partly removing a part of the photoresist layer of the third region; allowing the active region of the second region to be metalized and forming an ohmic contact layer; removing the photoresist layer of the third region; and forming a pattern including a source and a drain.

公开(公告)号：US20160343732A1

公开(公告)日：2016-11-24

申请号：US14785719

申请日：2015-04-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe HU

IPC: H01L27/12 ,  H01L21/465 ,  H01L21/469 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477

CPC classification number: H01L27/127 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/469 ,  H01L21/477 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/10 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.

Abstract translation: 本发明提供一种多晶氧化物薄膜晶体管（TFT）阵列基板及其制造方法。 通过本发明的两步法形成多晶氧化物TFT阵列基板的多晶氧化物薄膜层，省略了现有技术中所需的超高温退火工艺，其目的在于， 通过现有的无定形氧化物TFT阵列基板的制造设备，不需要特殊的设备或特殊的操作即可实现氧化物TFT阵列基板，而且易于实现; 同时，不再需要高温退火，能量消耗减少。