Abstract:
There is disclosed a rope device for tying a pet. The rope device includes a clamp, a rope and a cam. The clamp defines a channel and a recess communicated with the channel. The rope includes a first end connected to the clamp and a second end inserted through the channel. The cam is put in the recess. The cam includes a pivotal point, a furthest point from the pivotal point, and a nearest point from the pivotal point. As the rope is pulled in a direction, the cam is rotated in order to move the furthest point from the rope so as to allow the rope to move between the wall of the channel and the cam. As the rope is pulled in an opposite direction, the cam is rotated in order to move the furthest point towards the rope so as to pinch the rope between the wall of the channel and the cam.
Abstract:
A nonvolatile memory cell is provided. The memory cell includes a storage transistor and an injector in a well of an n-type conductivity. The well is formed in a semiconductor substrate of a p-type conductivity. The storage transistor comprises a source, a drain, a channel, and a charge storage region. The source and the drain are formed in the well and having the p-type conductivity with the channel of the well defined therebetween. The charge storage region is disposed over and insulated from the channel region by an insulator. Further provided are methods operating the memory cell, including means for injecting electrons from the channel through the insulator onto the charge storage region and means for injecting holes from the injector through the well through the channel through the insulator onto the charge storage region. The memory cell can be implemented in a conventional logic CMOS process.
Abstract:
A safety device is disclosed for use with a collar for a pet. The safety device includes a central member, a first lateral member and a second lateral member. The first lateral member is for pivotal and releasable engagement with the central member. The second lateral member is for pivotal and releasable engagement with the central member.
Abstract:
A conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function, voltage-divider function, and mass-filtering function to charge-carriers flows. The conductor-insulator system provides Image-Force barrier lowering effect to collect charge-carriers. The charge-injection system includes the conductor-filter system and the conductor-insulator system, wherein the filter of the conductor-filter system contacts the conductor of the conductor-insulator system. Method and apparatus on charges filtering, injection, and collection are provided for semiconductor device and nonvolatile memory device. Additionally, method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided to the charge-injection system and devices operation. Memory cells and array architectures and manufacturing method thereof are provided.
Abstract:
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes an electrical conductive floating gate formed in a trench in a semiconductor substrate, and an electrical conductive control gate having a portion disposed over and insulated from the floating gate. An electrical conductive tunneling gate is disposed over and insulated from the control gate by an insulating layer to form a tri-layer structure permitting both electron and hole charges tunneling through at similar tunneling rate. Spaced apart source and drain regions are formed with the source region disposed adjacent to and insulated from a lower portion of the floating gate, and with the drain region disposed adjacent to and insulated from an upper portion of the floating gate with a channel region formed therebetween and along a sidewall of the trench.
Abstract:
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a third conductive region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the third conductive region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
Abstract:
A web with a smooth feel, a bright appearance and durability is disclosed here. The web includes a first fabric of nylon fibers, a second fabric of polyester fibers woven together with the first fabric of nylon fibers and a decorative layer attached to the second fabric. The decorative layer is easily attached to the second fabric by means of coating or heating.
Abstract:
A spooling apparatus includes a housing, a spool received in the housing so that the spool can be rotated from an original position by an external force and automatically returned to the original position when released from the external force, a rope wound on the spool and a tension-controlling device received in the housing for controlling the tension of the rope in order to control the speed of the rope when wound back onto the spool. Furthermore, the spooling apparatus includes a braking device for slowing down the speed of the rope.