ROPE DEVICE
    61.
    发明申请
    ROPE DEVICE 审中-公开
    绳装置

    公开(公告)号:US20070011851A1

    公开(公告)日:2007-01-18

    申请号:US11160831

    申请日:2005-07-12

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    Abstract: There is disclosed a rope device for tying a pet. The rope device includes a clamp, a rope and a cam. The clamp defines a channel and a recess communicated with the channel. The rope includes a first end connected to the clamp and a second end inserted through the channel. The cam is put in the recess. The cam includes a pivotal point, a furthest point from the pivotal point, and a nearest point from the pivotal point. As the rope is pulled in a direction, the cam is rotated in order to move the furthest point from the rope so as to allow the rope to move between the wall of the channel and the cam. As the rope is pulled in an opposite direction, the cam is rotated in order to move the furthest point towards the rope so as to pinch the rope between the wall of the channel and the cam.

    Abstract translation: 公开了一种用于捆绑宠物的绳装置。 绳装置包括夹具,绳索和凸轮。 夹具限定了与通道连通的通道和凹槽。 绳索包括连接到夹具的第一端和插入通道的第二端。 凸轮被放在凹槽中。 凸轮包括枢转点,距离枢转点的最远点和离枢转点的最近点。 当绳索沿一个方向被拉动时,凸轮被旋转以使最远点从绳索移动,以便绳索在通道的壁和凸轮之间移动。 当绳索沿相反的方向拉动时,凸轮被转动以便将最远点朝向绳索移动,以便将绳索夹在通道的壁和凸轮之间。

    Methods of operating electrically alterable non-volatile memory cell
    62.
    发明申请
    Methods of operating electrically alterable non-volatile memory cell 失效
    操作电可变非易失性存储单元的方法

    公开(公告)号:US20060240613A1

    公开(公告)日:2006-10-26

    申请号:US11346816

    申请日:2006-02-03

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    Abstract: A nonvolatile memory cell is provided. The memory cell includes a storage transistor and an injector in a well of an n-type conductivity. The well is formed in a semiconductor substrate of a p-type conductivity. The storage transistor comprises a source, a drain, a channel, and a charge storage region. The source and the drain are formed in the well and having the p-type conductivity with the channel of the well defined therebetween. The charge storage region is disposed over and insulated from the channel region by an insulator. Further provided are methods operating the memory cell, including means for injecting electrons from the channel through the insulator onto the charge storage region and means for injecting holes from the injector through the well through the channel through the insulator onto the charge storage region. The memory cell can be implemented in a conventional logic CMOS process.

    Abstract translation: 提供非易失性存储单元。 存储单元包括n型导电性阱中的存储晶体管和注入器。 该阱形成在p型导电性的半导体衬底中。 存储晶体管包括源极,漏极,沟道和电荷存储区域。 源极和漏极形成在阱中并且具有p型导电性,阱之间的沟道被限定。 电荷存储区域通过绝缘体设置在沟道区域的上方并与绝缘体绝缘。 还提供了操作存储单元的方法,包括用于将电子从通道中通过绝缘体注入到电荷存储区域上的装置,以及用于将来自注射器的孔穿过阱通过穿过绝缘体的沟槽注入到电荷存储区上的装置。 存储器单元可以在传统的逻辑CMOS工艺中实现。

    Safety device of collar for pet
    63.
    发明授权
    Safety device of collar for pet 失效
    宠物衣领安全装置

    公开(公告)号:US07107941B2

    公开(公告)日:2006-09-19

    申请号:US10751294

    申请日:2004-01-02

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    CPC classification number: A44B11/25 A01K27/005

    Abstract: A safety device is disclosed for use with a collar for a pet. The safety device includes a central member, a first lateral member and a second lateral member. The first lateral member is for pivotal and releasable engagement with the central member. The second lateral member is for pivotal and releasable engagement with the central member.

    Abstract translation: 公开了一种用于宠物衣领的安全装置。 安全装置包括中心构件,第一横向构件和第二横向构件。 第一横向构件用于与中心构件枢转和可释放地接合。 第二横向构件用于与中心构件枢转和可释放地接合。

    Method and apparatus transporting charges in semiconductor device and semiconductor memory device

    公开(公告)号:US20060001053A1

    公开(公告)日:2006-01-05

    申请号:US11169399

    申请日:2005-06-28

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    Abstract: A conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function, voltage-divider function, and mass-filtering function to charge-carriers flows. The conductor-insulator system provides Image-Force barrier lowering effect to collect charge-carriers. The charge-injection system includes the conductor-filter system and the conductor-insulator system, wherein the filter of the conductor-filter system contacts the conductor of the conductor-insulator system. Method and apparatus on charges filtering, injection, and collection are provided for semiconductor device and nonvolatile memory device. Additionally, method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided to the charge-injection system and devices operation. Memory cells and array architectures and manufacturing method thereof are provided.

    Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells
    65.
    发明授权
    Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells 有权
    具有带弹道电荷注入器的沟槽结构的浮栅存储器单元和存储单元阵列

    公开(公告)号:US06958513B2

    公开(公告)日:2005-10-25

    申请号:US10457249

    申请日:2003-06-06

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    CPC classification number: H01L27/11521 H01L27/115 H01L29/42336 H01L29/7885

    Abstract: A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes an electrical conductive floating gate formed in a trench in a semiconductor substrate, and an electrical conductive control gate having a portion disposed over and insulated from the floating gate. An electrical conductive tunneling gate is disposed over and insulated from the control gate by an insulating layer to form a tri-layer structure permitting both electron and hole charges tunneling through at similar tunneling rate. Spaced apart source and drain regions are formed with the source region disposed adjacent to and insulated from a lower portion of the floating gate, and with the drain region disposed adjacent to and insulated from an upper portion of the floating gate with a channel region formed therebetween and along a sidewall of the trench.

    Abstract translation: 一种形成浮栅存储器单元阵列的方法,以及由此形成的阵列,其中每个存储单元包括形成在半导体衬底中的沟槽中的导电浮动栅极,以及导电控制栅极,其具有设置在绝缘上的部分 从浮动门。 导电隧道栅极通过绝缘层设置在控制栅极之上并与控制栅极绝缘,以形成三层结构,允许电子和空穴电荷以类似的隧穿速率隧穿。 间隔开的源极和漏极区域形成有源极区域,其设置为与浮置栅极的下部相邻并与其绝缘,并且漏极区域设置成与浮置栅极的上部相邻并与之隔绝,其中沟道区域形成在其间 并且沿着沟槽的侧壁。

    Method and apparatus for semiconductor device and semiconductor memory device
    66.
    发明申请
    Method and apparatus for semiconductor device and semiconductor memory device 有权
    半导体器件和半导体存储器件的方法和装置

    公开(公告)号:US20050201150A1

    公开(公告)日:2005-09-15

    申请号:US11055427

    申请日:2005-02-09

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    Abstract: Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a third conductive region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the third conductive region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

    Abstract translation: 为半导体器件和非易失性存储器件提供使用压电弹注电荷注入机构的电荷注入的方法和装置。 该装置包括应变源,注射过滤器,第一导电区域,第二导电区域和第三导电区域。 应变源允许在弹道电荷输送中的压电效应,使得能够在器件操作中实现压电弹药注入机制。 注入过滤器允许将一种极性类型的电荷载体从第一导电区域通过滤波器传输,并且通过第二导电区域传输到第三导电区域,同时阻止相反极性的电荷载体从第二导电区域传输到 第一导电区域。 本发明进一步提供一种能量带工程方法,其允许在不受到电介质击穿,不受冲击电离和不期望的RC影响的干扰的情况下操作装置。

    Web with smooth feel, bright appearance and durability
    67.
    发明申请
    Web with smooth feel, bright appearance and durability 审中-公开
    网络手感平滑,外观美观,耐用

    公开(公告)号:US20050130528A1

    公开(公告)日:2005-06-16

    申请号:US10736046

    申请日:2003-12-15

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    Abstract: A web with a smooth feel, a bright appearance and durability is disclosed here. The web includes a first fabric of nylon fibers, a second fabric of polyester fibers woven together with the first fabric of nylon fibers and a decorative layer attached to the second fabric. The decorative layer is easily attached to the second fabric by means of coating or heating.

    Abstract translation: 这里公开了具有平滑感,明亮的外观和耐用性的网。 网包括尼龙纤维的第一织物,与尼龙纤维的第一织物一起编织的聚酯纤维的第二织物和附着到第二织物的装饰层。 装饰层通过涂覆或加热容易地附着到第二织物上。

    Spooling apparatus
    68.
    发明授权
    Spooling apparatus 失效
    假脱机装置

    公开(公告)号:US06695101B1

    公开(公告)日:2004-02-24

    申请号:US10212337

    申请日:2002-08-05

    Applicant: Chih-Hsin Wang

    Inventor: Chih-Hsin Wang

    CPC classification number: A01K27/004 B65H75/4439

    Abstract: A spooling apparatus includes a housing, a spool received in the housing so that the spool can be rotated from an original position by an external force and automatically returned to the original position when released from the external force, a rope wound on the spool and a tension-controlling device received in the housing for controlling the tension of the rope in order to control the speed of the rope when wound back onto the spool. Furthermore, the spooling apparatus includes a braking device for slowing down the speed of the rope.

    Abstract translation: 卷线装置包括壳体,容纳在壳体中的线轴,使得线轴可以通过外力从原始位置旋转,并且当从外力释放时自动返回到原始位置,缠绕在线轴上的绳索和 张力控制装置容纳在壳体中以控制绳索的张力,以便当卷绕回到卷轴上时控制绳索的速度。 此外,卷线装置包括用于减慢绳索的速度的制动装置。

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