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81 条记录 (耗时 0.027 秒)

    Method of inhibiting formation of and breaking of mercury butter in chlor-alkali cells
    61.
    发明授权
    Method of inhibiting formation of and breaking of mercury butter in chlor-alkali cells 失效
    抑制氯碱电池中汞黄油的形成和破坏的方法

    公开(公告)号：US4391681A

    公开(公告)日：1983-07-05

    申请号：US377606

    申请日：1982-05-13

    申请人： Susan Anderson ,  David E. Brown ,  David E. Graham ,  Mahmood N. Mahmood ,  Maurice C. M. Man

    发明人： Susan Anderson ,  David E. Brown ,  David E. Graham ,  Mahmood N. Mahmood ,  Maurice C. M. Man

    IPC分类号： C25B1/36 ,  C25B1/16 ,  C25B1/42

    CPC分类号： C25B1/36

    摘要： The present invention relates to a method of inhibiting the formation of and/or breaking of preformed mercury butter in chlor-alkali cells. The method comprises introducing at any one of the numerous stages of the electrolytic process an aqueous solution of a surfactant material which enables the interfacial tension of the sodium-amalgam interface to be increased to or maintained above a value of 180 dynes/cm. The surfactants may be extracts of decaying vegetation, solutions of carboxylic acids or chlorohydrocarbons. Extracts containing lignite or humic acids are most effective.

    摘要翻译： 本发明涉及一种在氯碱电池中抑制预形成的汞黄油的形成和/或断裂的方法。 该方法包括在电解过程的许多阶段的任何一个阶段引入表面活性剂材料的水溶液，使得能够将钠 - 汞齐界面的界面张力增加到180达因/厘米以上。 表面活性剂可以是腐烂植被，羧酸或氯代烃溶液的提取物。 含有褐煤或腐殖酸的提取物是最有效的。

    Electrodes and method of preparation thereof for use in electrochemical cells
    62.
    发明授权
    Electrodes and method of preparation thereof for use in electrochemical cells 失效
    用于电化学电池的电极及其制备方法

    公开(公告)号：US4342792A

    公开(公告)日：1982-08-03

    申请号：US262415

    申请日：1981-05-11

    申请人： David E. Brown ,  Stephen M. Hall ,  Mahmood N. Mahmood

    发明人： David E. Brown ,  Stephen M. Hall ,  Mahmood N. Mahmood

    IPC分类号： H01M4/88 ,  C25B11/04 ,  C25B11/06 ,  H01M4/90 ,  B05D5/12

    CPC分类号： C25B11/0478 ,  H01M4/90

    摘要： This invention relates to novel electrodes and a method of preparation thereof for use in electrochemical cells. The novel electrodes contain a combination of electrocatalysts deposited on a metal substrate.The electrocatalysts are deposited from a homogeneous solution of the compounds of (a) at least one metal selected from iron, cobalt, manganese and nickel, (b) at least one metal selected from molybdenum, vanadium and tungsten, and (c) at least one rare earth metal of the lanthanide group having an atomic number of 57-71 inclusive, the metal compounds are decomposed to the oxides and the oxide coated substrate cured at elevated temperature in a reducing atmosphere. The electrodes thus produced can be used as an anode or as a cathode in fuel cells and in cells for the electrolysis of water or brines.

    摘要翻译： 本发明涉及新型电极及其制备方法，用于电化学电池。 新型电极包含沉积在金属基底上的电催化剂的组合。 所述电极催化剂由（a）选自铁，钴，锰和镍中的至少一种金属的化合物的均匀溶液沉积，（b）至少一种选自钼，钒和钨的金属，和（c）至少 镧系元素的一种稀土金属的原子序数为57-71，其中金属化合物分解成氧化物，氧化物涂覆的基底在还原气氛中在升高的温度下固化。 由此产生的电极可用作燃料电池中的阳极或阴极，以及用于电解水或盐水的电池。

    Method for forming semiconductor devices with active silicon height variation
    64.
    发明授权
    Method for forming semiconductor devices with active silicon height variation 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US08263453B2

    公开(公告)日：2012-09-11

    申请号：US13184050

    申请日：2011-07-15

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

    DYNAMIC WIRELESS NETWORKS AND INTERACTIVE WIRELESS INFORMATION COMMUNICATION AND DELIVERY SYSTEMS
    65.
    发明申请
    DYNAMIC WIRELESS NETWORKS AND INTERACTIVE WIRELESS INFORMATION COMMUNICATION AND DELIVERY SYSTEMS 审中-公开
    动态无线网络和交互式无线信息通信和传送系统

    公开(公告)号：US20120188939A1

    公开(公告)日：2012-07-26

    申请号：US13010437

    申请日：2011-01-20

    申请人： David E. Brown ,  Rick Sturdivant ,  Aaron DeWitt ,  Chris Turner

    发明人： David E. Brown ,  Rick Sturdivant ,  Aaron DeWitt ,  Chris Turner

    IPC分类号： H04W88/06 ,  H04W64/00

    CPC分类号： G01S5/02 ,  H04W64/00 ,  H04W76/10 ,  H04W84/12 ,  H04W88/06

    摘要： Wireless information communication and delivery systems are described herein that include at least one wireless-enabled device, a device location system, a positioning and communication system, and an information repository system. A configurable wireless protocol device is disclosed that includes a multi-modal transceiver that can establish a communication network with a local wireless-enabled device. A wireless network is described that includes: at least one configurable wireless protocol device; at least one wireless-enabled device; and at least one wireless access point. Methods of locating a wireless-enabled device are described and include: providing a wireless-enabled device, providing a configurable wireless protocol device comprising a modified wireless-protocol; and utilizing the configurable wireless protocol device to actively scan for the wireless-enabled device.

    摘要翻译： 本文描述了包括至少一个无线功能的设备，设备定位系统，定位和通信系统以及信息存储系统的无线信息通信和传送系统。 公开了一种可配置的无线协议设备，其包括可以与本地无线设备建立通信网络的多模式收发器。 描述了一种无线网络，其包括：至少一个可配置的无线协议设备; 至少一个无线使能设备; 和至少一个无线接入点。 描述了定位无线使能设备的方法，包括：提供启用无线的设备，提供包括经修改的无线协议的可配置无线协议设备; 并利用可配置的无线协议设备来主动扫描无线功能设备。

    Method for auditing data integrity in a high availability database
    67.
    发明授权
    Method for auditing data integrity in a high availability database 有权
    在高可用性数据库中审计数据完整性的方法

    公开(公告)号：US07895501B2

    公开(公告)日：2011-02-22

    申请号：US11702860

    申请日：2007-02-06

    申请人： David E. Brown

    发明人： David E. Brown

    IPC分类号： H03M13/00

    CPC分类号： G06F11/1004 ,  G06F11/2035 ,  G06F11/2038 ,  G06F11/2097 ,  G06F17/30371

    摘要： A method for maintaining the integrity of a backup database table on a secondary node against a continuously replicated and dynamically changing original database table on a primary node includes generating an original checksum of a segment of the original database table between a beginning record and an ending record. The checksum and identification data may be stored in an original control database table. The original control database table may be replicated to a backup control database table. Thereafter, a backup checksum of a segment of the backup database table between a beginning record and an ending record is generated. A comparison between the backup checksum and the original checksum is made in response to a triggering update to the backup control database table. Collisions by application generate transactions in the source and target databases may be detected despite the use of third party “black box” replication processes.

    摘要翻译： 用于在次节点上维护备用数据库表的完整性的方法针对主节点上的连续复制和动态改变的原始数据库表包括在起始记录和结束记录之间生成原始数据库表的段的原始校验和 。 校验和和识别数据可以存储在原始控制数据库表中。 原始控制数据库表可以被复制到备份控制数据库表。 此后，生成开始记录和结束记录之间的备份数据库表的段的备份校验和。 响应于备份控制数据库表的触发更新，进行备份校验和与原始校验和之间的比较。 尽管使用第三方“黑匣子”复制过程，但可能会检测到源和目标数据库中应用程序生成的事务冲突。

    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION
    68.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权
    用于形成具有活性硅高度变化的半导体器件的方法

    公开(公告)号：US20100151660A1

    公开(公告)日：2010-06-17

    申请号：US12691477

    申请日：2010-01-21

    申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

    IPC分类号： H01L21/20

    CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

    摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

    摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。