METHOD AND APPARATUS FOR ADJUSTING VIEWING AREA, AND DEVICE CAPABLE OF THREE-DIMENSION DISPLAYING VIDEO SIGNAL
    61.
    发明申请
    METHOD AND APPARATUS FOR ADJUSTING VIEWING AREA, AND DEVICE CAPABLE OF THREE-DIMENSION DISPLAYING VIDEO SIGNAL 有权
    用于调整观察区域的方法和装置以及可显示三维视频信号的装置

    公开(公告)号:US20140375778A1

    公开(公告)日:2014-12-25

    申请号:US14354949

    申请日:2011-12-21

    IPC分类号: H04N13/04

    摘要: Disclosed in the present application are a method and device for determining the position of a viewer and adjusting a viewing area, and a device for displaying three-dimensional video signals, such that the position of a viewer in front of an electronic device can be accurately determined and the viewing area can be adjusted according to the specific position, enabling the viewer to be unaware of any sudden viewing change when watching 3D signals. The method for determining the position of the viewer is applied in an electronic device comprising a display screen capable of displaying three-dimensional video signals. The viewing areas of the electronic device include a three-dimensional display area and a non-three-dimensional display area. The method comprises: acquiring the image in front of the electronic device; judging whether the image contains the face image of the viewer; if the image contains the face image, identifying at least one feature in the face image to determine the position of the viewer; according to the at least one feature, determining whether the viewing area of the viewer is a three-dimensional display area or a non-three-dimensional display area.

    摘要翻译: 在本申请中公开了一种用于确定观看者的位置和调整观看区域的方法和装置,以及用于显示三维视频信号的装置,使得电子设备前面的观众的位置可以准确地 并且可以根据特定位置来调整观看区域,使得观看者在观看3D信号时不会意识到任何突然的观看变化。 用于确定观看者的位置的方法被应用于包括能够显示三维视频信号的显示屏的电子设备中。 电子设备的观看区域包括三维显示区域和非三维显示区域。 该方法包括:获取电子设备前面的图像; 判断图像是否包含观看者的脸部图像; 如果图像包含脸部图像,则识别脸部图像中的至少一个特征以确定观看者的位置; 根据至少一个特征,确定观看者的观看区域是三维显示区域还是非三维显示区域。

    Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer
    62.
    发明授权
    Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer 有权
    使用快速退火在SiGe层上形成均匀的Ni(Pt)Si(Ge)接触

    公开(公告)号:US08865556B2

    公开(公告)日:2014-10-21

    申请号:US13611893

    申请日:2012-09-12

    摘要: Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and at least one active area formed in the wafer; a gate stack over a portion of the at least one active area which serves as a channel of the device; source and drain regions of the device adjacent to the gate stack, wherein the source and drain regions of the device include a semiconductor material selected from: silicon and silicon germanium; and silicide contacts to the source and drain regions of the device, wherein an interface is present between the silicide contacts and the semiconductor material, and wherein the interface has an interface roughness of less than about 5 nanometers.

    摘要翻译: 提供了不使用盖层形成光滑硅化物的技术。 一方面,提供一种FET器件。 FET器件包括在BOX上具有SOI层的SOI晶片和形成在晶片中的至少一个有源区域; 所述至少一个有效区域的一部分上的栅极堆叠,其用作所述装置的通道; 源极和漏极区域,其中该器件的源极和漏极区域包括选自硅和硅锗的半导体材料; 并且硅化物接触到器件的源极和漏极区域,其中在硅化物触点和半导体材料之间存在界面,并且其中界面的界面粗糙度小于约5纳米。

    Biomarkers for ovarian cancer
    63.
    发明授权
    Biomarkers for ovarian cancer 有权
    卵巢癌生物标记物

    公开(公告)号:US08682591B2

    公开(公告)日:2014-03-25

    申请号:US13372137

    申请日:2012-02-13

    CPC分类号: G06F19/34 G01N33/57449

    摘要: The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.

    摘要翻译: 本发明涉及一种在受试者中鉴定卵巢癌状态的方法,包括:(a)测量来自受试者的样品中的至少一种生物标志物,和(b)将测量与卵巢癌状态相关联。 本发明还涉及用于在受试者中鉴定卵巢癌状态的试剂盒。

    COMPOSITIONS AND METHODS FOR DIAGNOSING OVARIAN CANCER
    64.
    发明申请
    COMPOSITIONS AND METHODS FOR DIAGNOSING OVARIAN CANCER 审中-公开
    用于诊断OVARIAN癌症的组合物和方法

    公开(公告)号:US20140024552A1

    公开(公告)日:2014-01-23

    申请号:US13985140

    申请日:2012-02-15

    IPC分类号: G01N33/574

    摘要: The invention provides methods and compositions for distinguishing ovarian cancer from a benign pelvic mass using two or more of the following biomarkers: IL-6, MMP9, tPA, IGFBP2, MMP7, Tenascin, NAP2, glycodelin, MCSF, MMP2, Inhibin A, uPAR, and EGFR. The methods are useful in distinguishing a benign pelvic mass from ovarian cancer in subjects, particularly in subjects identified as having increased CA125 levels.

    摘要翻译: 本发明提供使用以下两种或更多种生物标志物来区分卵巢癌与良性骨盆块的方法和组合物:IL-6,MMP9,tPA,IGFBP2,MMP7,腱生蛋白,NAP2,糖链蛋白,MCSF,MMP2,抑制素A,uPA​​R ,和EGFR。 该方法可用于区分受试者中良性骨盆质量与卵巢癌,特别是在鉴定为具有增加的CA125水平的受试者中。

    BIOMARKERS FOR CANCER
    65.
    发明申请
    BIOMARKERS FOR CANCER 审中-公开
    癌症生物标志物

    公开(公告)号:US20140005059A1

    公开(公告)日:2014-01-02

    申请号:US12530456

    申请日:2009-09-08

    IPC分类号: G01N33/574

    CPC分类号: G01N33/57449 G01N33/574

    摘要: The instant invention provides methods and compositions for the diagnosis and treatment of cancer. The invention also provides method and compositions for determining if a subject is, or is at risk of becoming, chemoresistant.

    摘要翻译: 本发明提供了用于诊断和治疗癌症的方法和组合物。 本发明还提供了用于确定受试者是否具有成为化疗耐药性的风险的方法和组合物。

    NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS
    66.
    发明申请
    NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS 有权
    用于薄膜太阳能电池的氮化硅薄膜应力层

    公开(公告)号:US20140000712A1

    公开(公告)日:2014-01-02

    申请号:US13534519

    申请日:2012-06-27

    IPC分类号: H01L31/0264 H01L31/18

    摘要: A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

    摘要翻译: 形成光伏器件的方法包括在衬底的顶部形成热应力消除层,并在热应力消除层上形成牺牲背电极金属层。 在牺牲背电极金属层上形成半导体光子吸收层,吸收层与牺牲背极金属层的大致整个厚度反应,形成包含牺牲背电极金属的金属化合物的反欧姆接触 层和吸收层,与热应力消除层组合。

    Biomarkers for prostate cancer
    67.
    发明授权
    Biomarkers for prostate cancer 有权
    前列腺癌生物标志物

    公开(公告)号:US08603734B2

    公开(公告)日:2013-12-10

    申请号:US12663191

    申请日:2008-06-04

    IPC分类号: C12Q1/00 G01N24/00

    摘要: The instant invention provides methods and compositions for the detection of prostate cancer is a subject. In one embodiment, a method of detecting prostate cancer in a subject comprises the steps of (a) detecting the presence of at least one biomarker listed in Table 1 in a serum sample, wherein the presence of the biomarker in the serum sample is indicative of prostate cancer.

    摘要翻译: 本发明提供用于检测前列腺癌的方法和组合物是受试者。 在一个实施方案中,检测受试者中前列腺癌的方法包括以下步骤:(a)在血清样品中检测表1中列出的至少一种生物标志物的存在,其中血清样品中生物标志物的存在表明 前列腺癌。

    Contact resistivity reduction in transistor devices by deep level impurity formation
    68.
    发明授权
    Contact resistivity reduction in transistor devices by deep level impurity formation 有权
    深层杂质形成对晶体管器件的接触电阻率降低

    公开(公告)号:US08557693B2

    公开(公告)日:2013-10-15

    申请号:US12793046

    申请日:2010-06-03

    IPC分类号: H01L21/22

    摘要: A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.

    摘要翻译: 在半导体器件中形成低电阻接触结构的方法包括在半导体衬底中形成掺杂半导体区域; 在所述掺杂半导体区域的上部形成深层杂质区域; 通过退火激活掺杂半导体区域和深层杂质区域中的掺杂剂; 以及在深层杂质区上形成金属接触,从而在它们之间产生金属 - 半导体界面。

    Methods to fabricate silicide micromechanical device
    69.
    发明授权
    Methods to fabricate silicide micromechanical device 有权
    制造硅化物微机械装置的方法

    公开(公告)号:US08470628B2

    公开(公告)日:2013-06-25

    申请号:US13164126

    申请日:2011-06-20

    IPC分类号: H01L21/66

    摘要: A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.

    摘要翻译: 公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。 该方法包括提供设置在设置在硅衬底上的绝缘层上的硅层; 从所述绝缘层释放所述硅层的一部分,使得其至少部分地悬挂在所述绝缘层中的空腔上; 在至少所述硅层的释放部分的至少一个表面上沉积金属(例如Pt),并且使用热处理,使用沉积的金属至少完全硅化硅层的释放部分。 当整个Si元件被硅化时,该方法消除了对释放的Si元件的硅化物引起的应力。 此外,在形成完全硅化材料之后,也不使用常规的湿化学蚀刻,从而减少引起硅化物腐蚀和粘性增加的可能性。

    Silicide Micromechanical Device and Methods to Fabricate Same
    70.
    发明申请
    Silicide Micromechanical Device and Methods to Fabricate Same 有权
    硅化物微机械装置及其制造方法

    公开(公告)号:US20130020183A1

    公开(公告)日:2013-01-24

    申请号:US13625294

    申请日:2012-09-24

    IPC分类号: H01H59/00

    摘要: A miniaturized electro-mechanical switch includes a moveable portion having a contact configured to make, when the switch is actuated, an electrical connection between two stationary points. At least the contact is composed of a fully silicided material. A structure includes a silicon layer formed over an insulator layer and a micromechanical switch formed at least partially within the silicon layer. The micromechanical switch has a conductive structure, and where at least electrically contacting portions of the conductive structure are comprised of fully silicided material.

    摘要翻译: 小型化机电开关包括具有触点的可移动部分,该触点构造成当开关被致动时使得两个静止点之间的电连接。 至少接触由完全硅化的材料组成。 一种结构包括形成在绝缘体层上的硅层和至少部分地形成在硅层内的微机电开关。 微机械开关具有导电结构,并且其中导电结构的至少电接触部分由完全硅化材料构成。