摘要:
Disclosed in the present application are a method and device for determining the position of a viewer and adjusting a viewing area, and a device for displaying three-dimensional video signals, such that the position of a viewer in front of an electronic device can be accurately determined and the viewing area can be adjusted according to the specific position, enabling the viewer to be unaware of any sudden viewing change when watching 3D signals. The method for determining the position of the viewer is applied in an electronic device comprising a display screen capable of displaying three-dimensional video signals. The viewing areas of the electronic device include a three-dimensional display area and a non-three-dimensional display area. The method comprises: acquiring the image in front of the electronic device; judging whether the image contains the face image of the viewer; if the image contains the face image, identifying at least one feature in the face image to determine the position of the viewer; according to the at least one feature, determining whether the viewing area of the viewer is a three-dimensional display area or a non-three-dimensional display area.
摘要:
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and at least one active area formed in the wafer; a gate stack over a portion of the at least one active area which serves as a channel of the device; source and drain regions of the device adjacent to the gate stack, wherein the source and drain regions of the device include a semiconductor material selected from: silicon and silicon germanium; and silicide contacts to the source and drain regions of the device, wherein an interface is present between the silicide contacts and the semiconductor material, and wherein the interface has an interface roughness of less than about 5 nanometers.
摘要:
The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.
摘要:
The invention provides methods and compositions for distinguishing ovarian cancer from a benign pelvic mass using two or more of the following biomarkers: IL-6, MMP9, tPA, IGFBP2, MMP7, Tenascin, NAP2, glycodelin, MCSF, MMP2, Inhibin A, uPAR, and EGFR. The methods are useful in distinguishing a benign pelvic mass from ovarian cancer in subjects, particularly in subjects identified as having increased CA125 levels.
摘要:
The instant invention provides methods and compositions for the diagnosis and treatment of cancer. The invention also provides method and compositions for determining if a subject is, or is at risk of becoming, chemoresistant.
摘要:
A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.
摘要:
The instant invention provides methods and compositions for the detection of prostate cancer is a subject. In one embodiment, a method of detecting prostate cancer in a subject comprises the steps of (a) detecting the presence of at least one biomarker listed in Table 1 in a serum sample, wherein the presence of the biomarker in the serum sample is indicative of prostate cancer.
摘要:
A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.
摘要:
A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.
摘要:
A miniaturized electro-mechanical switch includes a moveable portion having a contact configured to make, when the switch is actuated, an electrical connection between two stationary points. At least the contact is composed of a fully silicided material. A structure includes a silicon layer formed over an insulator layer and a micromechanical switch formed at least partially within the silicon layer. The micromechanical switch has a conductive structure, and where at least electrically contacting portions of the conductive structure are comprised of fully silicided material.