公开(公告)号：US20120081197A1

公开(公告)日：2012-04-05

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi PARK ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Gyungock Kim

IPC: H01P7/00

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

公开(公告)号：US20120027336A1

公开(公告)日：2012-02-02

申请号：US12975161

申请日：2010-12-21

Applicant: Jeong Woo PARK ,  Gyungock Kim

Inventor： Jeong Woo PARK ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/105

Abstract: Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.

Abstract translation: 提供了马赫 - 曾德尔调制器。 马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导，在输入和输出波导之间并联连接的第一分支波导和第二分支波导，以及连接区域， 第一分支波导和第二分支波导。 第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域，并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间 第一和第二分支波导的区域。

公开(公告)号：US20110109955A1

公开(公告)日：2011-05-12

申请号：US12771939

申请日：2010-04-30

Applicant: Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/015 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212

Abstract: Provided is an electro-optic device. Sine the electro-optic device includes a plurality of first conductive type semiconductor layers and a plurality of depletion layers formed by a third semiconductor disposed between the plurality of first conductive type semiconductor layers, an electro-optic device optimized for a high speed and low power consumption can be provided.

Abstract translation: 提供了一种电光装置。 所述电光装置一般包括多个第一导电类型半导体层和由设置在多个第一导电类型半导体层之间的第三半导体层形成的多个耗尽层，为高速和低功率优化的电光装置 可以提供消费。

公开(公告)号：US20110051222A1

公开(公告)日：2011-03-03

申请号：US12652623

申请日：2010-01-05

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/015 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212

Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.

Abstract translation: 提供了一种电光装置。 电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。 第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。

公开(公告)号：US20110038588A1

公开(公告)日：2011-02-17

申请号：US12642707

申请日：2009-12-18

Applicant: Duk Jun KIM ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun KIM ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/10

CPC classification number: G02B6/124

Abstract: Provided is an optical coupler. The optical coupler includes a lower cladding layer on a substrate, a core layer on the lower cladding layer, the core layer comprising a diffraction grating coupler and an optical waveguide, and an upper cladding layer on the core layer. The upper cladding layer has a thickness of about one quarter of a wavelength of an optical signal passing through the core layer divided by a refractive index of the first upper cladding layer. Thus, Fresnel reflection may be minimized, and also, it may prevent a Fabry-Perot interferometer from occurring.

Abstract translation: 提供了一种光耦合器。 光耦合器包括在基底上的下包层，下包覆层上的芯层，芯层包括衍射光栅耦合器和光波导，以及芯层上的上覆层。 上包层具有通过芯层的光信号的波长的大约四分之一的厚度除以第一上包层的折射率。 因此，菲涅尔反射可以被最小化，并且也可以防止发生法布里 - 珀罗干涉仪。

公开(公告)号：US07881574B2

公开(公告)日：2011-02-01

申请号：US12491454

申请日：2009-06-25

Applicant: Junghyung Pyo ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Junghyung Pyo ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B6/34

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/34

Abstract: Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.

Abstract translation: 提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅 所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及 具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

公开(公告)号：US07756176B2

公开(公告)日：2010-07-13

申请号：US11952408

申请日：2007-12-07

Applicant: Gyungock Kim ,  In Gyoo Kim ,  Junghyung Pyo ,  Ki Seok Chang

Inventor： Gyungock Kim ,  In Gyoo Kim ,  Junghyung Pyo ,  Ki Seok Chang

IPC: H01S5/00

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

Abstract: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.

Abstract translation: 公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。 因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

公开(公告)号：US20100130010A1

公开(公告)日：2010-05-27

申请号：US12538080

申请日：2009-08-07

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: H01L21/308 ,  G01B11/27

CPC classification number: H01L21/0338 ,  G01B11/27 ,  G03F9/7069 ,  G03F9/7088 ,  H01L21/0337

Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

Abstract translation: 提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。 该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

公开(公告)号：US20100060369A1

公开(公告)日：2010-03-11

申请号：US12516105

申请日：2007-10-31

Applicant: Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

Inventor： Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

IPC: H03B7/14

CPC classification number: H01L49/003 ,  H01L29/94 ,  H03B17/00

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract translation: 提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。 振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器， 限制施加电流的最大量并向MIT装置施加直流恒定电压的电动电源以及在MIT装置上照射电磁波的光源，其中振荡特性是通过使用 光源。

公开(公告)号：US20090207472A1

公开(公告)日：2009-08-20

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/786

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。