公开(公告)号：US06801408B1

公开(公告)日：2004-10-05

申请号：US09705420

申请日：2000-11-02

申请人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

发明人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

IPC分类号： G11B539

CPC分类号： G11B5/3916

摘要： In at least one embodiment, the apparatus of the invention is a read sensor which includes a shield, a sensor element, a read gap positioned between the shield and the sensor element, and an extra gap positioned between the shield and the sensor element and adjacent the read gap. The sensor element is positioned in a sensor layer. With the sensor element and the shield separated by only the relatively thin gap layer, high sensitivity of the sensor element is obtained. Further, by placing the relatively thick extra gap between the shield and the sensor layer and about the sensor element, the potential for shorting is minimized. The shield can be planarized to keep the read gap and the sensor layer at, and about, the sensor element substantially planar. This, in turn, results in improved control of sensor track widths and greatly reduces the potential for pooling of photoresist. In at least one embodiment, the method of the invention is for fabricating a read sensor and includes depositing a read gap onto a planarized shield, depositing an extra gap adjacent an exposed portion of the read gap, and depositing a sensor element onto the exposed portion of the first gap and adjacent to the extra gap.

摘要翻译： 在至少一个实施例中，本发明的装置是读取传感器，其包括屏蔽件，传感器元件，位于屏蔽件和传感器元件之间的读取间隙，以及位于屏蔽件和传感器元件之间的相邻的间隙 读差距。 传感器元件位于传感器层中。 传感器元件和屏蔽仅由相对薄的间隙层隔开，可以获得传感器元件的高灵敏度。 此外，通过在屏蔽和传感器层之间以及传感器元件周围放置相对较厚的额外间隙，使短路的可能性最小化。 可以将屏蔽层平坦化，以将读取的间隙和传感器层保持在传感器元件的基本平面上并且围绕其传播。 这反过来导致传感器轨道宽度的改进的控制，并且大大降低了光致抗蚀剂的集合的潜力。 在至少一个实施例中，本发明的方法用于制造读取传感器，并且包括将读取间隙沉积在平坦化屏蔽上，在读取间隙的暴露部分附近沉积额外的间隙，以及将传感器元件沉积到暴露部分上 的第一个间隙并且与额外的间隙相邻。

公开(公告)号：US06410170B1

公开(公告)日：2002-06-25

申请号：US09315863

申请日：1999-05-20

申请人： Yingjian Chen ,  Chester Qian

发明人： Yingjian Chen ,  Chester Qian

IPC分类号： G11B566

CPC分类号： G11B5/851 ,  Y10S428/90

摘要： A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N2 may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd, to provide expanding &agr;-Fe and &ggr;-Fe2N lattice constants. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible, for values of Bs greater than around 12 kG to 17 kG. Embodiments may be used for pole or shield structures in magnetic heads for data storage and retrieval apparatuses to improve high frequency performance.

摘要翻译： 本发明的优选方法提供了用于承载磁通量的改进的薄膜。 利用优选的方法，可以通过使用N 2的反应溅射沉积Fe以形成包含α-Fe和γ-Fe 4 N的薄膜来形成磁性薄膜。 利用该方法，沉积膜中的γ-Fe 4 N的相对百分比增加，以提供α-Fe和γ-Fe4N两者的扩展晶格常数。 增加的γ-Fe4N增加电阻率同时扩大晶格常数以提供更高的电阻率的矫顽力。 通过调整溅射功率，N 2气体百分比，N2的流量和衬底偏压，可以提高γ-Fe 4 N的比例以提供α-Fe和γ-Fe 4 N的扩展晶格常数。 在一些实施例中，可以使用约3-4kW的高溅射功率，约15-30％的N 2溅射FeX，其中X选自Rh，Ta，Hf，Al，Zr，Ti，Ru ，Si，Cr，V，Si，Sr，Nb，Mo，Ru和Pd，以提供扩展的α-Fe和γ-Fe2N晶格常数。 在一些实施方案中，对于低于约10Oe，5Oe或3Oe的矫顽力值，具有大于约50μOMEGAcm，80mΩEGcm，100μOMEGAcm，115μOMEGAcm或更大的电阻率值的FeXN膜是可能的， 大约12 kG到17 kG。 实施例可以用于磁头中的磁极或屏蔽结构，用于数据存储和检索装置，以改善高频性能。

公开(公告)号：US06353318B1

公开(公告)日：2002-03-05

申请号：US09523587

申请日：2000-03-10

申请人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

发明人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.

摘要翻译： 本发明的装置体现在具有磁阻元件的磁场传感器，用于利用磁场偏置磁阻元件的磁偏置层和位于磁偏置层和磁阻元件之间的电绝缘体。 绝缘体防止磁阻元件和磁偏置层之间的电流的流动，并且绝缘体的至少一部分允许磁场从磁偏置层通过到磁阻元件，使得磁阻元件被偏置。 本发明的方法体现在一种用于制造磁场传感器的方法，该磁场传感器具有以下步骤：形成磁阻元件，在主阻抗元件的至少一部分上形成具有主部分和端部的下绝缘体，形成 在所述下绝缘体的主部分上方形成磁偏置层，并且在所述磁偏置层上方并在所述下绝缘体的所述端部上方形成上绝缘体，使得所述磁偏置层与所述磁阻元件电绝缘。

公开(公告)号：US06233116B1

公开(公告)日：2001-05-15

申请号：US09192388

申请日：1998-11-13

申请人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

发明人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

IPC分类号： G11B5147

CPC分类号： G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  G11B5/3156

摘要： The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

摘要翻译： 本发明提供一种具有改进的层叠助焊剂携带结构和制造方法的薄膜写入头。 优选的实施例提供了叠层层：高力矩磁性材料和容易对准的高电阻率磁性材料。 在优选实施例中，容易对准的层压层通过交换耦合引起单轴各向异性，以提高高力矩材料中的单轴各向异性。 这允许通过DC磁控溅射沉积诱导的单轴各向异性，并且如果需要，还提供改进的后沉积退火。 优选将FeXN如FeRhN或其它晶体结构材料与非晶合金材料（优选Co基）如CoZrCr层压。 在优选实施例中，如上所述，可以将上极和下极结构层叠。 如果需要，这种层压结构具有比具有绝缘层压板的结构更高的Bs，并且轭和磁极尖端可以一体地形成，因为焊剂可以沿着或穿过层压层行进。 本发明的优选实施例提高了软磁性能，降低涡流，改善了硬轴对准，同时不会有害地影响结构的矫顽力，磁导率和磁致伸缩，从而改善了高频运行。

公开(公告)号：US08333008B1

公开(公告)日：2012-12-18

申请号：US11192591

申请日：2005-07-29

申请人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

发明人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3169 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for fabricating a perpendicular magnetic recording head, and the head so formed, are described. The method includes depositing an underlayer directly on an insulating layer. The underlayer preferably includes at least one of a nonferromagnetic metal, silicon oxide, and silicon nitride. A pole layer, which has a pole removal rate, is provided on the underlayer. The method and system further include forming a perpendicular magnetic recording pole from the pole layer. The perpendicular magnetic recording pole has a top and a bottom that is narrower than the top. The process of forming the perpendicular magnetic recording pole further includes removing a portion of the pole layer such that a pole removal rate for the pole layer is less than or substantially equal to a removal rate of the underlayer during the removing step.

摘要翻译： 描述了用于制造垂直磁记录头和如此形成的头的方法和系统。 该方法包括直接在绝缘层上沉积底层。 底层优选包括非铁磁金属，氧化硅和氮化硅中的至少一种。 在底层上提供具有极去除率的极层。 该方法和系统还包括从极层形成垂直磁记录极。 垂直磁记录极具有比顶部窄的顶部和底部。 形成垂直磁记录极的过程还包括去除极层的一部分，使得极层的极去除率小于或基本上等于在去除步骤期间底层的去除速率。

公开(公告)号：US07691434B1

公开(公告)日：2010-04-06

申请号：US11971398

申请日：2008-01-09

申请人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

发明人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

IPC分类号： G11B5/39 ,  C23C14/46

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996

摘要： A method of fabricating a bias structure of a magnetoresistive read head for a magnetoresistive sensor stack formed on a substrate includes forming an underlayer and forming a bias layer over the underlayer. The method further includes forming a dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack. The dusting layer includes discontinuous, nano-sized islands.

摘要翻译： 制造用于形成在衬底上的磁阻传感器堆叠的磁阻读取头的偏置结构的方法包括形成底层并在衬底上形成偏置层。 该方法还包括在底层或偏置层之间以及偏置层和磁阻传感器堆叠之间的至少一个下直接形成除尘层。 除尘层包括不连续的纳米尺寸岛。

公开(公告)号：US07554767B1

公开(公告)日：2009-06-30

申请号：US11172773

申请日：2005-07-01

申请人： Yining Hu ,  Jun Liu ,  Yingjian Chen ,  Mark D. Thomas ,  Kroum S. Stoev

发明人： Yining Hu ,  Jun Liu ,  Yingjian Chen ,  Mark D. Thomas ,  Kroum S. Stoev

IPC分类号： G11B5/127 ,  B24B49/00

CPC分类号： B24B49/10 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3166 ,  G11B5/3169 ,  Y10T29/49048

摘要： Methods are provided for fabricating an electrical lapping guide, and for using the electrical lapping guide to fabricate a transducer of a magnetic recording head. Additionally, transducers comprising an electrical lapping guide are also provided. Methods of fabricating the electrical lapping guide comprise forming a resistive element proximate to a shield pedestal. Accordingly, the resistive element is both aligned with the shield pedestal in a transverse direction, and closely spaced from the shield pedestal in a longitudinal direction. The resistance of the resistive element correlates well with a throat height of the shield pedestal, and the correlation is utilized in the methods of fabricating the transducer. When a magnetoresistive stripe is uses as a second electrical lapping guide while fabricating the transducer, the two can be used to control a tilt angle in the transverse direction during lapping.

摘要翻译： 提供了用于制造电研磨引导件的方法，并且用于使用电研磨引导器来制造磁记录头的换能器。 此外，还提供了包括电研磨引导件的换能器。 制造电研磨引导件的方法包括形成靠近屏蔽基座的电阻元件。 因此，电阻元件在横向方向上与屏蔽基座对准，并且在纵向方向上与屏蔽基座紧密地间隔开。 电阻元件的电阻与屏蔽基座的喉部高度良好相关，并且在制造换能器的方法中使用相关性。 当制造换能器时，当磁阻条纹用作第二电研磨引导件时，两者可用于在研磨期间控制横向上的倾斜角度。

公开(公告)号：US07493688B1

公开(公告)日：2009-02-24

申请号：US11352536

申请日：2006-02-13

申请人： Lei Wang ,  Liping Ren ,  Yingjian Chen ,  Christopher T. Ngo ,  Ming Zhao

发明人： Lei Wang ,  Liping Ren ,  Yingjian Chen ,  Christopher T. Ngo ,  Ming Zhao

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for providing a magnetic recording transducer is disclosed. The method includes providing a first pole having front and rear portions and a back gap on the rear portion. The method also includes providing an insulator on the first pole. The method includes providing a write gap and providing a portion of a second pole on at least the write gap. A portion of the write gap resides on the front portion of the first pole. A portion of the insulator covers a portion of the first pole between the portion of the second pole and the back gap. The method also includes providing a mask that covers the back gap and exposes the portion of the second pole and the insulator. The method also includes performing a pole trim that can substantially remove the portion of the insulator covering the remaining portion of the first pole.

摘要翻译： 公开了一种用于提供磁记录换能器的方法。 该方法包括提供具有前部和后部的第一极和后部上的后部间隙。 该方法还包括在第一极上提供绝缘体。 所述方法包括提供写入间隙并且在至少所述写入间隙上提供第二极点的一部分。 写入间隙的一部分位于第一极的前部。 绝缘体的一部分覆盖第二极的部分和后间隙之间的第一极的一部分。 该方法还包括提供覆盖后隙并且暴露第二极和绝缘体的部分的掩模。 该方法还包括执行极性修剪，其可以基本上去除覆盖第一极的剩余部分的绝缘体的部分。

公开(公告)号：US07177117B1

公开(公告)日：2007-02-13

申请号：US10853416

申请日：2004-05-24

申请人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

发明人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

IPC分类号： G11B5/147

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/313 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T428/12465

摘要： A magnetic head comprising a first layer containing NiFe having a concentration of iron that is at least thirty percent and not more than seventy percent; a second layer that adjoins the first layer and contains FeCoN having a concentration of iron that is greater than the second layer's concentration of cobalt, having a concentration of nitrogen that is less than the second layer's concentration of cobalt and less than three percent; and a third layer containing FeCoNi having a concentration of nickel that is less than eight percent, having a concentration of cobalt that is less than the third layer's concentration of iron and greater than the third layer's concentration of nickel, the third layer adjoining only one of the first and second layers. The first and second layers may be repeated to form a magnetically soft high BS laminate for a pole layer.

摘要翻译： 磁头，其包含含有铁浓度为至少百分之三十且不超过百分之七十的NiFe的第一层; 邻接第一层并且含有铁浓度大于第二层钴浓度的FeCoN的第二层，其具有小于第二层的钴浓度的氮浓度小于3％; 以及第三层，其含有镍浓度小于8％的FeCoNi，其钴浓度小于第三层铁的浓度，大于第三层的镍浓度，第三层仅与 第一层和第二层。 可以重复第一层和第二层以形成用于极层的磁性柔软的高B层压板。

公开(公告)号：US06975486B2

公开(公告)日：2005-12-13

申请号：US10213339

申请日：2002-08-06

申请人： Yingjian Chen ,  Xiaozhong Dang ,  Mohamad T. Krounbi ,  George V. Kelley

发明人： Yingjian Chen ,  Xiaozhong Dang ,  Mohamad T. Krounbi ,  George V. Kelley

IPC分类号： G11B5/31 ,  G11B5/33 ,  G11B5/147

CPC分类号： G11B5/313 ,  G11B5/3116 ,  G11B5/3153 ,  G11B5/3163 ,  G11B5/332

摘要： A writer for high frequency, data storage heads. The writer includes a first magnetic pole upon which a write gap pedestal is formed with an upper pedestal layer of high moment material with a planar upper surface. An electrical coil is formed on the first magnetic pole. A write gap layer is deposited on the upper surface of the upper pedestal layer. The writer includes a second magnetic pole disposed above the first magnetic pole with a magnetic, flat, top pole layer. The second magnetic pole includes a bottom shaper fabricated from high moment material positioned between the coil and the top pole layer. An insulation insert separates the bottom shaper from the upper pedestal layer. The second magnetic pole includes a thin dielectric lamination layer that separates the top pole layer from the bottom shaper to disrupt the path of eddy current in the second magnetic pole.

摘要翻译： 高频数据存储头的写入器。 写入器包括第一磁极，写入间隙基座形成有具有平坦上表面的高力矩材料的上基座层。 在第一磁极上形成电线圈。 写间隙层沉积在上基座层的上表面上。 写入器包括设置在具有磁性，平坦的顶极层的第一磁极上方的第二磁极。 第二磁极包括由位于线圈和顶极层之间的高力矩材料制成的底部整形器。 绝缘插件将底部整形器与上基座层分开。 第二磁极包括将顶极层与底部整形器分离以破坏第二磁极中涡流的路径的薄介电层压层。