公开(公告)号：US06812483B2

公开(公告)日：2004-11-02

申请号：US10451378

申请日：2004-05-12

申请人： Hideo Ohno ,  Masashi Kawasaki ,  Keita Ohtani

发明人： Hideo Ohno ,  Masashi Kawasaki ,  Keita Ohtani

IPC分类号： H01L2906

CPC分类号： H01L33/28 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/01716 ,  G02F1/01725 ,  G02F2001/01775 ,  H01L31/035236 ,  H01L33/06 ,  H01S5/3402 ,  H01S5/3419 ,  H01S5/347

摘要： Disclosed is an optical semiconductor device which has a quantum well structure comprising a quantum well made of a zinc oxide or a zinc oxide mixed crystal thin film, and utilizes optical transition between subbands in the quantum well structure. An element of this device can be formed as a film on a transparent substrate or a plastic substrate at a temperature of 200° C. or lower. The quatum well structure includes a barrier layer made of an insulating material such as ZnMgO; a homologous compound expressed by the following general formula: RMO3(AO)m, wherein R=Sc or In, M=Fe, Cr, Ga or Al, A=Zn, Mg, Cu, Mn, Fe, Co, Ni or Cd, and m=a natural number; or (Li, Na)(Ga, Al)O2. The optical semiconductor device is capable of using a transparent or plastic substrate as its substrate, and achieving a high-efficient wide-band light-emitting or receiving device and an ultrafast optical moderation or switching applicable to an optical communication system requiring one terabit/sec or more of data transmission speed.

摘要翻译： 公开了一种具有量子阱结构的光学半导体器件，其包括由氧化锌或氧化锌混合晶体薄膜制成的量子阱，并且利用量子阱结构中的子带之间的光学转换。 该装置的元件可以在200℃以下的温度下在透明基板或塑料基板上形成为膜。 本发明的结构包括由绝缘材料如ZnMgO制成的阻挡层; 由以下通式表示的同源化合物：RMO3（AO）m，其中R = Sc或In，M = Fe，Cr，Ga或Al，A = Zn，Mg，Cu，Mn，Fe，Co，Ni或Cd ，m =自然数; 或（Li，Na）（Ga，Al）O 2。 光学半导体器件能够使用透明或塑料基板作为其基板，并且实现高效宽带发光或接收装置和适用于需要一兆比特/秒的光通信系统的超快光学调节或切换 或更多的数据传输速度。

公开(公告)号：US06703645B2

公开(公告)日：2004-03-09

申请号：US10291687

申请日：2002-11-12

申请人： Hideo Ohno ,  Keita Ohtani

发明人： Hideo Ohno ,  Keita Ohtani

IPC分类号： H01L3300

CPC分类号： G06N99/002 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/402 ,  H01F10/3213 ,  H01F41/325

摘要： A spin filter is composed of a first magnetic semiconductor multi-quantum well structure, a second magnetic semiconductor multi-quantum well structure and a non-magnetic semiconductor quantum well structure which is located between the first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure. The first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure are split in spin state. Carriers in down-spin state are penetrated through the first magnetic semiconductor multi-quantum well structure and carriers in up-spin state are penetrated through the second magnetic semiconductor multi-quantum well structure.

摘要翻译： 旋转滤波器由第一磁半导体多量子阱结构，第二磁半导体多量子阱结构和非磁性半量子阱结构构成，该结构位于第一磁半导体多量子阱结构和第二磁半导体多量子阱结构之间 磁性半导体多量子阱结构。 第一磁半导体多量子阱结构和第二磁半导体多量子阱结构在自旋状态下分裂。 穿过第一磁半导体多量子阱结构的向下自旋状态的载流子穿过第二磁性半导体多量子阱结构，并且向上旋转状态的载流子穿过第二磁性半导体多量子阱结构。

公开(公告)号：US4253061A

公开(公告)日：1981-02-24

申请号：US961283

申请日：1978-11-16

申请人： Toshiharu Ono ,  Sensaku Ikeda ,  Hideo Ohno

发明人： Toshiharu Ono ,  Sensaku Ikeda ,  Hideo Ohno

IPC分类号： G01R15/24 ,  G01R31/00 ,  G01R7/00

CPC分类号： G01R15/24

摘要： In a high voltage or current detector of the type utilizing an insulating tube, polarized light is directed to a photoelectric element mounted on the upper end or contained in the insulating tube so as to modulate the polarized light in accordance with the voltage or current to be measured. The modulated light is directed to a photosensitive element on the lower end of the tube for producing an electric signal which is applied to a meter for displaying the voltage or current.

摘要翻译： 在使用绝缘管的类型的高电压或电流检测器中，偏振光被引导到安装在上端或包含在绝缘管中的光电元件，以便根据电压或电流将偏振光调制为 测量。 调制的光被引导到管的下端的感光元件，用于产生施加到用于显示电压或电流的仪表的电信号。