公开(公告)号：US4253061A

公开(公告)日：1981-02-24

申请号：US961283

申请日：1978-11-16

申请人： Toshiharu Ono ,  Sensaku Ikeda ,  Hideo Ohno

发明人： Toshiharu Ono ,  Sensaku Ikeda ,  Hideo Ohno

IPC分类号： G01R15/24 ,  G01R31/00 ,  G01R7/00

CPC分类号： G01R15/24

摘要： In a high voltage or current detector of the type utilizing an insulating tube, polarized light is directed to a photoelectric element mounted on the upper end or contained in the insulating tube so as to modulate the polarized light in accordance with the voltage or current to be measured. The modulated light is directed to a photosensitive element on the lower end of the tube for producing an electric signal which is applied to a meter for displaying the voltage or current.

摘要翻译： 在使用绝缘管的类型的高电压或电流检测器中，偏振光被引导到安装在上端或包含在绝缘管中的光电元件，以便根据电压或电流将偏振光调制为 测量。 调制的光被引导到管的下端的感光元件，用于产生施加到用于显示电压或电流的仪表的电信号。

公开(公告)号：US20130141966A1

公开(公告)日：2013-06-06

申请号：US13701257

申请日：2011-05-26

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/16 ,  H01L43/02

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.

摘要翻译： 提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。 通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。 通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。

公开(公告)号：US20130094284A1

公开(公告)日：2013-04-18

申请号：US13701846

申请日：2011-05-31

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Hiroyuki Yamamoto ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/02

CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/31 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

摘要翻译： 提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。 磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如 磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

公开(公告)号：US08217477B2

公开(公告)日：2012-07-10

申请号：US12318243

申请日：2008-12-23

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

摘要翻译： 提供了具有较低功耗的可靠的非易失性存储器。 在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入 作为记录层的铁磁自由层之间。 由此，通过使用自旋转移转矩来切换记录层的磁化。

公开(公告)号：US07348589B2

公开(公告)日：2008-03-25

申请号：US11213918

申请日：2005-08-30

申请人： Jun Hayakawa ,  Hideo Ohno

发明人： Jun Hayakawa ,  Hideo Ohno

IPC分类号： H01L47/00

CPC分类号： G11C11/16

摘要： A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.

摘要翻译： 提供了低功耗高度集成的磁存储器。 具有自由层的第一元件部分，在自由层的膜厚度方向上形成的第一被钉扎层和形成在自由层和第一被钉扎层之间的绝缘阻挡层，以及具有上述第一元件部分的第二元件部分 自由层，在自由层的膜表面方向上形成的第二被钉扎层和形成在自由层和第二钉扎层之间的非磁性层。 在第二元件部分的薄膜表面方向上流动电流I 以写入磁信息，并且电流I SUB在第一元件部分的膜厚度方向上流动 用于读取磁信息。

公开(公告)号：US20070025029A1

公开(公告)日：2007-02-01

申请号：US11493892

申请日：2006-07-27

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20050127380A1

公开(公告)日：2005-06-16

申请号：US10765901

申请日：2004-01-29

申请人： Masashi Kawasaki ,  Hideo Ohno

发明人： Masashi Kawasaki ,  Hideo Ohno

IPC分类号： G11C11/401 ,  H01L21/331 ,  H01L27/15 ,  H01L29/22 ,  H01L29/51 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H01L33/28 ,  H01S5/026 ,  H01L33/00

CPC分类号： H01S5/0261 ,  H01L27/15 ,  H01L29/22 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/7317 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/7869 ,  H01L33/28

摘要： A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

摘要翻译： 提供了通过使用由氧化锌等制成的透明沟道层而完全和部分透明的晶体管。 由诸如氧化锌ZnO的透明半导体形成的沟道层11。 一个透明电极用于所有的源12，漏极13和栅极14或其一部分。 作为透明电极，使用掺杂有例如III族元素的透明导电材料，例如导电ZnO。 作为栅极绝缘层15，使用透明绝缘材料，例如掺杂有能够以1价或1价V价元素为一价元素的绝缘性ZnO。 如果衬底16必须是透明的，例如可以使用玻璃，蓝宝石，塑料等作为透明材料。

公开(公告)号：US06476411B1

公开(公告)日：2002-11-05

申请号：US09649515

申请日：2000-08-29

申请人： Hideo Ohno ,  Keita Ohtani

发明人： Hideo Ohno ,  Keita Ohtani

IPC分类号： H01L2906

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/08 ,  H01L33/30 ,  H01S5/3419

摘要： An intersubband light emitting element includes a semiconducting substrate, a first layer composed of a first semiconducting material, and a second layer composed of second semiconducting material. The first layer makes a heterojunction with the second layer. The top of a valence band of the first semiconducting material is higher in energy than the bottom of a conduction band of the second semiconducting material. The element further includes a third layer making a heterojunction with the first or second layer. The third layer has a superlattice structure. One of the first and second layer is provided on the semiconducting substrate directly or through at least one semiconducting layer.

摘要翻译： 子带间发光元件包括半导体衬底，由第一半导体材料构成的第一层和由第二半导体材料构成的第二层。 第一层与第二层形成异质结。 第一半导体材料的价带的顶部的能量高于第二半导体材料的导带的底部。 元件还包括与第一或第二层形成异质结的第三层。 第三层具有超晶格结构。 第一层和第二层之一直接或通过至少一个半导体层设置在半导体衬底上。

公开(公告)号：US5079601A

公开(公告)日：1992-01-07

申请号：US453634

申请日：1989-12-20

申请人： Leo Esaki ,  Hideo Ohno ,  Emilio E. Mendez

发明人： Leo Esaki ,  Hideo Ohno ,  Emilio E. Mendez

IPC分类号： H01L31/0352 ,  H01L31/10 ,  H01L33/06 ,  H01S5/00 ,  H01S5/062 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L31/0352 ,  H01S5/34 ,  H01S5/06203 ,  H01S5/06206 ,  H01S5/3402 ,  H01S5/3418 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer. The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes and in an allowed region of the other electrode, with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

公开(公告)号：US4847565A

公开(公告)日：1989-07-11

申请号：US130004

申请日：1987-12-08

申请人： Hideki Hasegawa ,  Hideo Ohno

发明人： Hideki Hasegawa ,  Hideo Ohno

IPC分类号： H03F3/19 ,  H01L45/02 ,  H03F3/55

CPC分类号： H01L45/02

摘要： A solid state electromagnetic wave amplifier is provided with confinement structures for the prevention of transverse carrier wave diffusion into the amplifier body. The carrier waves are confined with a non-metallic semiconductor layer sandwiched between a semi-insulating substrate and a spacer insulating layer. The amplifier can operate at frequencies up to on the order of 100 GHz.

摘要翻译： 固态电磁波放大器具有限制结构，用于防止横向载波扩散到放大器体内。 载波被夹在半绝缘衬底和间隔绝缘层之间的非金属半导体层所限制。 放大器可以在高达100 GHz的频率下工作。