PT service system and method
    62.
    发明授权
    PT service system and method 有权
    PT服务体系和方法

    公开(公告)号:US07561892B2

    公开(公告)日:2009-07-14

    申请号:US11187947

    申请日:2005-07-25

    IPC分类号: H04B7/00 H04Q7/20

    摘要: A PT service system and method are provided. According to an embodiment, there is provided a client device comprising a PT (push-to) client to transmit a talk burst request message for requesting a permission to send a talk burst. The talk burst request message includes a timestamp which includes time information associated with the transmission of the talk burst request message.

    摘要翻译: 提供PT服务系统和方法。 根据实施例,提供了一种客户端设备,其包括PT(推送式)客户端,用于发送用于请求发送通话突发的许可的通话短脉冲串请求消息。 通话突发请求消息包括时间戳,其包括与通话短脉冲串请求消息的发送相关联的时间信息。

    Washing machine combined with dryer and controlling method thereof
    63.
    发明授权
    Washing machine combined with dryer and controlling method thereof 有权
    洗衣机结合烘干机及其控制方法

    公开(公告)号:US07520145B2

    公开(公告)日:2009-04-21

    申请号:US11184288

    申请日:2005-07-18

    IPC分类号: D06F33/00 D06F39/00

    摘要: A washing machine combined with a dryer is provided. In the washing machine combined with a dryer, a tub is provided, a dryer duct is installed outside of the tub to introduce a surrounding air into the tub, a heater is installed in the dryer duct to apply heat to the surrounding air, a temperature sensor is installed in the dryer duct to measure temperature inside the tub or temperature inside the dryer duct, and a dryer fan is installed in the dryer duct to draw in the surrounding air.

    摘要翻译: 提供与烘干机组合的洗衣机。 在与干衣机组合的洗衣机中,设有一个桶,一个干燥器管道安装在桶的外部,以将周围的空气引入桶中,加热器安装在干燥器管道中,以向周围的空气施加热量, 传感器安装在干燥器管道中以测量桶内的温度或干燥器管道内的温度,并且干燥器风扇安装在干燥器管道中以吸入周围空气。

    Dish washing machine
    64.
    发明申请
    Dish washing machine 审中-公开
    洗碗机

    公开(公告)号:US20090056763A1

    公开(公告)日:2009-03-05

    申请号:US12230609

    申请日:2008-09-02

    IPC分类号: B08B3/04

    摘要: A controlling method for a dish washing machine that is capable of accomplishing an excellent washing effect while consuming a small amount of energy is disclosed. The controlling method for the dish washing machine includes; spraying a washing water mixed with detergent into a tub containing dishes, spraying washing water that is not mixed with detergent into the tub, spraying steam into the tub after the spraying of washing water that is not mixed with the detergent, and reducing the humidity of the tub.

    摘要翻译: 公开了一种能够在消耗少量能量的同时实现优异的洗涤效果的洗碗机的控制方法。 洗碗机的控制方法包括: 将与洗涤剂混合的洗涤剂喷入含有餐具的桶中,将不与洗涤剂混合的洗涤水喷入桶中,喷洒未与洗涤剂混合的洗涤水后,将蒸汽喷入桶中,并降低湿度 浴缸。

    DISHWASHER AND RACK ASSEMBLY THEREFOR
    65.
    发明申请
    DISHWASHER AND RACK ASSEMBLY THEREFOR 审中-公开
    洗衣机和机架组件

    公开(公告)号:US20080156358A1

    公开(公告)日:2008-07-03

    申请号:US11954633

    申请日:2007-12-12

    IPC分类号: B08B13/00 A47L15/50

    摘要: A dish washer capable of washing dishes of various sizes is provided. The dishwasher includes a rack assembly having a plurality of dish holders into which dishes may be inserted and by which the dishes supported are separated from each other on the rack assembly. The plurality of dish holders includes first and second dish holders having different heights disposed adjacent to one another.

    摘要翻译: 提供能够洗涤各种尺寸的碟子的洗碗机。 洗碗机包括具有多个盘架的齿条组件,碟形盘可以插入其中,并且支撑的托盘通过该碟架组合件彼此分离。 多个餐具架包括彼此相邻布置的不同高度的第一和第二餐具架。

    Methods for producing and using silk nanofiber nerve conduits
    66.
    发明授权
    Methods for producing and using silk nanofiber nerve conduits 有权
    丝绸纳米纤维神经导管的生产和使用方法

    公开(公告)号:US09072592B2

    公开(公告)日:2015-07-07

    申请号:US13389787

    申请日:2010-08-11

    摘要: The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength. Due to these properties, the silk nanofiber nerve conduit of the present invention helps the regeneration of the nerve injury to recover a motor skill and a sensory function, and thus shows an excellent effect of nerve regeneration. Therefore, the silk nanofiber nerve conduit of the present invention can be used in treating a nerve injury instead of an existing synthetic polymeric nerve conduit.

    摘要翻译: 本发明涉及一种丝绸纳米纤维神经管,其特征在于,由丝纤维形成的直径为200〜400nm的丝心蛋白纳米纤维层叠在层上,形成多孔导管状; 及其制造方法,更具体地说,涉及一种丝素纳米纤维神经导管的制造方法,其特征在于,包括:(步骤1)制备纤维纺丝溶液; (步骤2)通过将步骤1中制备的纤维纺丝溶液静电纺丝到涂覆有聚环氧乙烷的圆柱形收集部分中来生产导管形状的丝素纳米纤维; 和(步骤3)将在步骤2中产生的导管形状的丝纳米纤维与收集部分分离。 本发明的丝素纳米纤维神经管具有优异的生物相容性; 允许体液通过导管的孔隙进入和导出; 具有适当的弹性,拉伸强度和撕裂强度。 由于这些特性,本发明的丝纳米纤维神经管有助于神经损伤的再生以恢复运动技能和感觉功能,因此显示出优异的神经再生效果。 因此,本发明的丝纳米纤维神经管可用于治疗神经损伤而不是现有的合成聚合物神经导管。

    Semiconductor device and method for manufacturing the same
    67.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08735940B2

    公开(公告)日:2014-05-27

    申请号:US12965640

    申请日:2010-12-10

    IPC分类号: H01L29/66

    摘要: There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.

    摘要翻译: 提供了一种半导体器件及其制造方法。 根据本发明的半导体器件包括:基底; 半导体层,其包括形成在所述基底基板上的接收槽和突出部,第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层的至少两个绝缘层,以及间隔开的第二载流子注入层 除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极,其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极,其中接收槽的最低端部接触第一载流子注入层的最上层,并且布置的绝缘图案 在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层,并且设置在接收槽的厚度方向上的两个侧端部的外侧。

    Semiconductor device and method of manufacturing the same
    68.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08525231B2

    公开(公告)日:2013-09-03

    申请号:US12965649

    申请日:2010-12-10

    IPC分类号: H01L29/66

    摘要: There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.

    摘要翻译: 提供了一种半导体器件及其制造方法。 半导体器件包括:基底; 具有接收槽的半导体层,突起部分,第一载流子注入层,至少两个绝缘图案和设置在基底基板上的第二载流子注入层,绝缘图案设置成穿过第一载流子注入层和 第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极,设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极,并且具有凹入到所述接收槽中的凹部,其中所述接收槽的最下部接触所述第一载流子注入层的最上层,或者设置在所述第一载流子注入层的最上层 并且绝缘图案设置在绝缘图案中的半导体层的最内部,穿过第一载流子注入层,并且沿着其厚度方向设置在容纳槽的两侧的外侧。

    Semiconductor device and method for manufacturing of the same
    69.
    发明授权
    Semiconductor device and method for manufacturing of the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08319308B2

    公开(公告)日:2012-11-27

    申请号:US12654897

    申请日:2010-01-07

    IPC分类号: H01L21/322 H01L29/47

    摘要: The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.

    摘要翻译: 本发明提供一种半导体器件,包括:基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件,其覆盖中心区域上的第一欧姆电极,并且与第二欧姆电极间隔开。