摘要:
A method for controlling a dishwasher including the steps of first determining a steam operation mode for washing dishes and second determining at least one of a motor rotation speed, a number of repetitions of a steam supply step, a steam washing pattern, and an amount of detergent based on the determined steam operation mode.
摘要:
A PT service system and method are provided. According to an embodiment, there is provided a client device comprising a PT (push-to) client to transmit a talk burst request message for requesting a permission to send a talk burst. The talk burst request message includes a timestamp which includes time information associated with the transmission of the talk burst request message.
摘要:
A washing machine combined with a dryer is provided. In the washing machine combined with a dryer, a tub is provided, a dryer duct is installed outside of the tub to introduce a surrounding air into the tub, a heater is installed in the dryer duct to apply heat to the surrounding air, a temperature sensor is installed in the dryer duct to measure temperature inside the tub or temperature inside the dryer duct, and a dryer fan is installed in the dryer duct to draw in the surrounding air.
摘要:
A controlling method for a dish washing machine that is capable of accomplishing an excellent washing effect while consuming a small amount of energy is disclosed. The controlling method for the dish washing machine includes; spraying a washing water mixed with detergent into a tub containing dishes, spraying washing water that is not mixed with detergent into the tub, spraying steam into the tub after the spraying of washing water that is not mixed with the detergent, and reducing the humidity of the tub.
摘要:
A dish washer capable of washing dishes of various sizes is provided. The dishwasher includes a rack assembly having a plurality of dish holders into which dishes may be inserted and by which the dishes supported are separated from each other on the rack assembly. The plurality of dish holders includes first and second dish holders having different heights disposed adjacent to one another.
摘要:
The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength. Due to these properties, the silk nanofiber nerve conduit of the present invention helps the regeneration of the nerve injury to recover a motor skill and a sensory function, and thus shows an excellent effect of nerve regeneration. Therefore, the silk nanofiber nerve conduit of the present invention can be used in treating a nerve injury instead of an existing synthetic polymeric nerve conduit.
摘要:
There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.
摘要:
There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.
摘要:
The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.
摘要:
An absorbable multifilament draw-textured yarn having a bulky structure, and a manufacturing method and medical use thereof The absorbable multifilament draw-textured yarn is obtained by draw-texturing a multifilament made of an absorbable polymer and has bulkiness and a superior soft touch, which are the characteristics of draw-textured yarns. As a result of partially imparting a bulkiness of 150-1000% to the multifilament draw-textured yarn, it is possible to culture cells in the bulky structure, and the multifilament draw-textured yarn is suitable for cell delivery or drug delivery.