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137 条记录 (耗时 0.04 秒)

    Memory device using a transistor and one resistant element for storage
    61.
    发明授权
    Memory device using a transistor and one resistant element for storage 有权
    使用晶体管和一个电阻元件进行存储的存储器件

    公开(公告)号：US06838727B2

    公开(公告)日：2005-01-04

    申请号：US10602736

    申请日：2003-06-25

    申请人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    发明人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC分类号： H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

    CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Graphene electronic devices
    63.
    发明授权
    Graphene electronic devices 有权
    石墨烯电子设备

    公开(公告)号：US09093509B2

    公开(公告)日：2015-07-28

    申请号：US13242177

    申请日：2011-09-23

    申请人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    发明人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    IPC分类号： H01L29/06 ,  H01L29/778 ,  H01L29/16

    CPC分类号： H01L29/778 ,  H01L29/0657 ,  H01L29/1606

    摘要： A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer.

    摘要翻译： 石墨烯电子器件包括栅电极，设置在栅电极上的栅极氧化物，形成在栅极氧化物上的石墨烯沟道层，以及分别设置在石墨烯沟道层两端的源电极和漏电极。 在石墨烯通道层中，多个纳米孔在石墨烯通道层的宽度方向上以单一线排列。

    Graphene electronic device and method of fabricating the same
    64.
    发明授权
    Graphene electronic device and method of fabricating the same 失效
    石墨烯电子器件及其制造方法

    公开(公告)号：US08421131B2

    公开(公告)日：2013-04-16

    申请号：US12929817

    申请日：2011-02-17

    申请人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    发明人： Hyun-jong Chung ,  Seung-jae Baek ,  Sun-ae Seo ,  Yun-sung Woo ,  Jin-seong Heo ,  David Seo

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.

    摘要翻译： 石墨烯电子器件可以包括硅衬底，硅衬底上的连接线，硅衬底上的第一电极和第二电极，以及硅衬底上的层间电介质。 层间电介质可以被配置为覆盖连接线，并且第一和第二电极和层间电介质可以被进一步配置为暴露第一和第二电极的至少一部分。 所述石墨烯电子器件还可以包括在所述层间电介质上的绝缘层和所述绝缘层上的石墨烯层，所述石墨烯层具有第一端和第二端。 石墨烯层的第一端可以连接到第一电极，并且石墨烯层的第二端可以连接到第二电极。

    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices
    67.
    发明授权
    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices 失效
    磁迹，包括磁迹的信息存储设备，以及操作信息存储设备的方法

    公开(公告)号：US08018764B2

    公开(公告)日：2011-09-13

    申请号：US12461062

    申请日：2009-07-30

    申请人： Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    发明人： Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    IPC分类号： G11C11/14

    CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

    摘要翻译： 磁道包括具有不同长度和不同磁畴壁移动速度的第一和第二磁畴区域。 第一和第二磁畴区域中较长的区域用作信息读/写区域。 信息存储装置包括磁道。 磁道包括多个磁畴区域和形成在相邻磁畴区域之间的磁畴壁区域。 多个磁畴区域包括第一磁畴区域和具有比第一磁畴区域更小的长度的至少一个第二磁畴区域。 信息存储装置还包括被配置为在第一磁畴区域上执行信息记录操作和信息再现操作中的至少一个的第一单元和被配置为移动磁畴的磁畴壁的磁畴壁移动单元 墙区域。

    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices
    69.
    发明申请
    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices 有权
    磁阻设备，包括其的信息存储设备和操作信息存储设备的方法

    公开(公告)号：US20110085258A1

    公开(公告)日：2011-04-14

    申请号：US12801712

    申请日：2010-06-22

    申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC分类号： G11B27/36 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Information storage devices using magnetic domain wall movement and methods of manufacturing the same
    70.
    发明授权
    Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
    使用磁畴壁运动的信息存储装置及其制造方法相同

    公开(公告)号：US07910232B2

    公开(公告)日：2011-03-22

    申请号：US12149641

    申请日：2008-05-06

    申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    IPC分类号： G11B5/76

    CPC分类号： G11B5/855 ,  G11B5/7325 ,  G11C11/14 ,  G11C19/0841

    摘要： Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants.

    摘要翻译： 提供信息存储装置及其制造方法。 信息存储装置包括形成在底层上的磁性层。 底层具有至少一个第一区域和至少一个第二区域。 第一和第二区域具有不同的结晶度特性。 磁性层具有形成在至少一个第一区域上的至少一个第三区域和形成在至少一个第二区域上的至少一个第四区域。 第三和第四区域具有不同的磁各向异性能量常数。