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    Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer
    65.
    发明授权
    Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer 有权
    绝缘有机聚合物，使用绝缘聚合物形成的有机绝缘层和包含该绝缘层的有机薄膜晶体管

    公开(公告)号：US07750342B2

    公开(公告)日：2010-07-06

    申请号：US11655181

    申请日：2007-01-19

    申请人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

    发明人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

    摘要： Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

    摘要翻译： 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    66.
    发明授权
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号：US07692021B2

    公开(公告)日：2010-04-06

    申请号：US11508925

    申请日：2006-08-24

    申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    IPC分类号： C07D277/20 ,  C07D277/60

    CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

    摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

    Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same
    67.
    发明申请
    Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same 有权
    含有羟基的聚合物，介电膜和使用其的有机薄膜晶体管的有机绝缘体组合物

    公开(公告)号：US20080283829A1

    公开(公告)日：2008-11-20

    申请号：US12081452

    申请日：2008-04-16

    申请人： Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

    发明人： Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

    IPC分类号： H01L51/05 ,  C08F16/06

    CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/0545

    摘要： An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

    摘要翻译： 提供了包含交联剂和含羟基的低聚物或含羟基的聚合物的有机绝缘体组合物。 还提供了使用有机绝缘体组合物的电介质膜和有机薄膜晶体管（OTFT）。 电介质膜可以包括具有含羟基的低聚物或含羟基聚合物的化合物，其通过使用具有至少两个乙烯基醚基团的交联剂进行交联而连接。 有机薄膜晶体管可以包括基板上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的源极和漏极以及与栅极绝缘层接触的有机半导体层，其中栅极绝缘层包括 如上所述的介电膜。

    Composition and organic insulating film prepared using the same
    68.
    发明申请
    Composition and organic insulating film prepared using the same 审中-公开
    组合物和使用其制备的有机绝缘膜

    公开(公告)号：US20080111128A1

    公开(公告)日：2008-05-15

    申请号：US11806744

    申请日：2007-06-04

    申请人： Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

    发明人： Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

    IPC分类号： H01L51/00 ,  H01B1/12

    CPC分类号： H01L51/052

    摘要： Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

    摘要翻译： 公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。 在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。 因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。 因此，有机薄膜晶体管的寿命可以延长。

    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
    69.
    发明申请
    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
    制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管

    公开(公告)号：US20070194386A1

    公开(公告)日：2007-08-23

    申请号：US11604826

    申请日：2006-11-28

    申请人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    发明人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    IPC分类号： H01L29/94

    CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/0545 ,  H01L2251/308

    摘要： Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

    摘要翻译： 公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

    Method for fabricating organic thin film transistor
    70.
    发明授权
    Method for fabricating organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US07241652B2

    公开(公告)日：2007-07-10

    申请号：US11123120

    申请日：2005-05-06

    申请人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

    发明人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/052 ,  H01L51/105

    摘要： Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

    摘要翻译： 本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源/漏电极和有机半导体层，其中源绝缘膜的表面 /漏电极浸渍无机或有机酸，然后进行退火。 根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。 此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。