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    Method for fabricating organic thin film transistor
    1.
    发明授权
    Method for fabricating organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US07241652B2

    公开(公告)日：2007-07-10

    申请号：US11123120

    申请日：2005-05-06

    申请人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

    发明人： Hyun Jung Park ,  Bon Won Koo ,  Joo Young Kim ,  Jung Han Shin ,  Eun Jeong Jeong ,  Sang Yoon Lee

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/052 ,  H01L51/105

    摘要： Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

    摘要翻译： 本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源/漏电极和有机半导体层，其中源绝缘膜的表面 /漏电极浸渍无机或有机酸，然后进行退火。 根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。 此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same
    2.
    发明授权
    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
    有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法

    公开(公告)号：US08030644B2

    公开(公告)日：2011-10-04

    申请号：US11481843

    申请日：2006-07-07

    申请人： Jung Han Shin ,  Eun Kyung Lee ,  Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Sang Yoon Lee

    发明人： Jung Han Shin ,  Eun Kyung Lee ,  Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Sang Yoon Lee

    IPC分类号： H01L35/24

    CPC分类号： H01L51/052 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0055 ,  Y10T428/31663

    摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.

    摘要翻译： 本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。 本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。 提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。 可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。 有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

    Method for increasing mobility of an organic thin film transistor by application of an electric field
    4.
    发明授权
    Method for increasing mobility of an organic thin film transistor by application of an electric field 有权
    通过施加电场来提高有机薄膜晶体管的迁移率的方法

    公开(公告)号：US07622323B2

    公开(公告)日：2009-11-24

    申请号：US11196382

    申请日：2005-08-04

    申请人： Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

    发明人： Chang Ju Kim ,  Eun Jeong Jeong ,  Sang Yoon Lee ,  Bon Won Koo ,  Eun Kyung Lee

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0541 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0516 ,  H01L51/0545

    摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.

    摘要翻译： 一种通过施加电场来制造有机薄膜晶体管的方法。 该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压 和漏电极，并向栅电极施加交流（AC）电压。 通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。 因此，该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高离子/离子比率。

    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units
    7.
    发明授权
    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
    含有低聚噻吩和n型杂芳族单元的有机半导体共聚物

    公开(公告)号：US08313978B2

    公开(公告)日：2012-11-20

    申请号：US13200407

    申请日：2011-09-23

    申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC分类号： H01L51/54

    CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units
    8.
    发明授权
    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units 有权
    含有低聚噻吩和异构芳香族单元的有机半导体共聚物

    公开(公告)号：US08053764B2

    公开(公告)日：2011-11-08

    申请号：US12054134

    申请日：2008-03-24

    申请人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    发明人： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC分类号： H01L51/54

    CPC分类号： H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    摘要翻译： 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。