PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE
    61.
    发明申请
    PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE 审中-公开
    投影目标及其制造方法

    公开(公告)号:US20090015951A1

    公开(公告)日:2009-01-15

    申请号:US12196618

    申请日:2008-08-22

    IPC分类号: G02B7/182 G03B27/54

    摘要: A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

    摘要翻译: 一种制造微光刻投影曝光装置(10)的投影物镜(22)的方法。 投影物镜(22)包括至少一个镜子(M1至M6),每个镜子具有镜支撑件(241至246)和反射涂层(26)。 测量预组装的投影物镜的第一成像像差。 在施加涂层(26)之前,反射镜支撑件(241至246)具有期望的表面变形(34)。 如果反射镜(M1至M6)对于没有涂层(26)的投影光不反射,则使用具有另一波长的测量光。 或者,可以提供两个相同的反射镜支撑件(246)。 具有反射涂层的一个支撑件是预组装的投影物镜的一部分,其测量成像像差。 另一个支撑件在涂覆和将支撑件安装到物镜之前提供了表面变形。

    CATADIOPTRIC PROJECTION OBJECTIVE
    62.
    发明申请
    CATADIOPTRIC PROJECTION OBJECTIVE 审中-公开
    目标投影目标

    公开(公告)号:US20080310014A1

    公开(公告)日:2008-12-18

    申请号:US12196637

    申请日:2008-08-22

    IPC分类号: G02B17/08

    摘要: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane;wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption.

    摘要翻译: 用于将设置在投影物镜的物平面中的图案成像到投影物镜的像平面上的反射折射投射物镜包括:用于将设置在物平面中的图案成像为第一中间图像的第一物镜部分; 第二目标部分,用于将第一中间成像成像成第二中间图像; 用于将第二中间成像直接成像到图像平面上的第三目标部分; 其中具有第一连续镜面的第一凹面镜和具有第二连续镜面的至少一个第二凹面镜布置在所述第二中间图像的上游; 瞳孔表面形成在物平面与第一中间图像之间,第一和第二中间图像之间以及第二中间图像与图像平面之间; 并且所有凹面反射镜光学地远离光瞳表面布置。 该系统具有中等透镜材料质量消耗的非常高的数值孔径的潜力。

    Method For Distortion Correction In A Microlithographic Projection Exposure Apparatus
    63.
    发明申请
    Method For Distortion Correction In A Microlithographic Projection Exposure Apparatus 有权
    微光刻投影曝光装置中的失真校正方法

    公开(公告)号:US20080278699A1

    公开(公告)日:2008-11-13

    申请号:US12107879

    申请日:2008-04-23

    IPC分类号: G03B27/68 G03B27/42

    摘要: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

    摘要翻译: 对于在用于晶片的EUV投影曝光装置的投影透镜的情况下的变形的校正,建议将承载待投影图案的掩模版倾斜,并且优选地将晶片倾斜小角度,围绕垂直于 透镜的轴线A并且垂直于扫描方向,并且在每一种情况下通过在掩模版或晶片上产生的光场的中间。 为了校正基本上反对称的二次变形,掩模版和/或衬底相反地围绕设置成至少近似平行于投影透镜的光轴的旋转轴旋转。

    PROJECTION OPTICS FOR MICROLITHOGRAPHY
    64.
    发明申请
    PROJECTION OPTICS FOR MICROLITHOGRAPHY 有权
    投影光学技术

    公开(公告)号:US20080170216A1

    公开(公告)日:2008-07-17

    申请号:US11969476

    申请日:2008-01-04

    申请人: Hans-Juergen Mann

    发明人: Hans-Juergen Mann

    IPC分类号: G03B27/70

    摘要: A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed.

    摘要翻译: 一种用于微光刻的投影光学器件,其将物平面中的物场成像为图像平面中的图像场,其中所述投影光学器件包括至少一个弯曲镜,并且包括至少一个折射子单元以及相关系统, 公开了通过这些方法制备的方法和产品。

    Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
    66.
    发明申请
    Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 有权
    投影物镜包括多个镜子,前视镜M3

    公开(公告)号:US20060171040A1

    公开(公告)日:2006-08-03

    申请号:US11356525

    申请日:2006-02-16

    IPC分类号: G02B17/00

    摘要: According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.

    摘要翻译: 根据一个示例性实施例,提供了一种投影物镜,并且包括至少两个非平面(弯曲)反射镜,其中,沿着光线定义的下一个至最后的非平面镜与最后的非平面镜之间的轴向距离 路径大于最后的非平面镜与在光路中跟随的透镜的第一折射表面之间的轴向距离。 在一个示例性实施例中,第一折射表面与单遍型透镜相关联。 当前目标形成具有至少约0.80或更高(例如0.95)的数值孔径的图像。 优选地,该目的不包括折叠反射镜,并且在两个反射镜之间不存在中间图像,以及物镜的瞳孔没有遮蔽。

    Mirror for use in a microlithography projection exposure apparatus
    68.
    发明授权
    Mirror for use in a microlithography projection exposure apparatus 有权
    用于微光刻投影曝光装置的镜子

    公开(公告)号:US09568845B2

    公开(公告)日:2017-02-14

    申请号:US13417510

    申请日:2012-03-12

    摘要: A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.

    摘要翻译: 一种包括基板和反射涂层的反射镜,其包括布置在基板和第一组层之间的第一组层和第二组层。 第一组和第二组都包括多个交替的第一材料层和第二材料层,其彼此排列。 用于5-30nm范围内的辐射的第一材料的折射率大于在该波长范围内的第二材料的折射率。 第一组层被配置为具有大于20的多个层,使得当辐射具有在5-30nm范围内的波长的辐射时,少于20%的辐射达到第二组 层,其具有用于校正反射镜的表面形式的层厚度变化。

    Microlithography projection optical system, tool and method of production
    70.
    发明授权
    Microlithography projection optical system, tool and method of production 有权
    微光投影光学系统,工具及生产方法

    公开(公告)号:US08970819B2

    公开(公告)日:2015-03-03

    申请号:US12235957

    申请日:2008-09-23

    IPC分类号: G03B27/42 G03F7/20 G03F1/62

    摘要: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of phase shifting masks as objects to be imaged, in particular for EUV wavelengths.

    摘要翻译: 公开了一种微光刻投影光学系统。 该系统可以包括多个光学元件,其被布置成将来自物体平面中的物体场的具有波长λ的辐射成像到图像平面中的图像场。 多个光学元件可以具有距离物面大于2.8μm的入射光瞳。 通过光学系统的辐射路径的特征在于主要光线相对于物平面的法线具有3°或更大的角度。 这可以允许使用相移掩模作为要成像的对象,特别是对于EUV波长。