公开(公告)号：US20050129928A1

公开(公告)日：2005-06-16

申请号：US10944466

申请日：2004-09-16

申请人： Ju-Hyung Lee ,  Nasreen Chopra

发明人： Ju-Hyung Lee ,  Nasreen Chopra

IPC分类号： B32B5/16

CPC分类号： B82Y30/00 ,  Y10T428/25

摘要： Nanostructures provide increased surface area to augment heat-exchange surfaces of various devices or structures. In one embodiment, an article of manufacture has a body having a heat-exchanging surface and nanostructures disposed on the heat-exchanging surface. The nanostructures are arranged to enhance thermal transfer between the body and a region of fluid and may be spaced apart from each other to permit flow of a fluid between the nanostructures. Examples of suitable nanostructures include carbon and/or boron nitride nanotubes, which may be grown on the heat-exchanging surface.

摘要翻译： 纳米结构提供增加的表面积以增加各种装置或结构的热交换表面。 在一个实施例中，制品具有设置在热交换表面上的具有热交换表面和纳米结构的主体。 纳米结构被布置成增强体和流体区域之间的热传递，并且可以彼此间隔开以允许流体在纳米结构之间流动。 合适的纳米结构的实例包括可在热交换表面上生长的碳和/或氮化硼纳米管。

公开(公告)号：US20050007292A1

公开(公告)日：2005-01-13

申请号：US10811548

申请日：2004-03-29

申请人： Ju-Hyung Lee ,  Yong-Jin Kim

发明人： Ju-Hyung Lee ,  Yong-Jin Kim

IPC分类号： H01Q1/24 ,  H01Q7/00

CPC分类号： H01Q1/243 ,  H01Q1/245 ,  H01Q7/00

摘要： A loop antenna for a mobile terminal capable of reducing SAR. The loop antenna has three lines. The first line generates and transmits predetermined electric waves upon receiving current from an oscillator for oscillating power and has a connection point to connect an external line thereto. The second line includes a first end connected to a printed circuit board to ground current supplied to the first line and a second end having an opened structure. The third line has a first end connected to one side of the first line through the connection point and a second end connected to one side of the second line coupled to the printed circuit board in order to receive current from the first line through the connection point and transmit current into the second line.

公开(公告)号：US06806207B2

公开(公告)日：2004-10-19

申请号：US10375852

申请日：2003-02-25

申请人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

发明人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

IPC分类号： H01L2131

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

摘要： A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

摘要翻译： 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US06632735B2

公开(公告)日：2003-10-14

申请号：US09924240

申请日：2001-08-07

申请人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

发明人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31633

摘要： A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

摘要翻译： 公开了形成碳掺杂氧化硅层的方法。 碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。 碳掺杂氧化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。 在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中