公开(公告)号：US06448187B2

公开(公告)日：2002-09-10

申请号：US09792122

申请日：2001-02-21

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，将氧化硅基膜暴露于 水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US07106828B2

公开(公告)日：2006-09-12

申请号：US09994188

申请日：2001-11-26

申请人： Nasreen Gazala Chopra ,  Ronald L. Moon

发明人： Nasreen Gazala Chopra ,  Ronald L. Moon

IPC分类号： H05G1/64

CPC分类号： G01N23/04 ,  H01J47/02

摘要： X-ray imaging systems are provided. A representative x-ray imaging system includes a gas detector that is configured to retain a volume of gas. The gas detector incorporates a first detection circuit corresponding to a first region of the gas and a second detection circuit corresponding to a second region of the gas. The first detection circuit is adapted to provide a first signal indicative of an intensity of x-rays radiating into the first region of the gas and the second detection circuit is adapted to provide a second signal indicative of an intensity of x-rays radiating into the second region of the gas. Methods and other systems also are provided.

公开(公告)号：US06632735B2

公开(公告)日：2003-10-14

申请号：US09924240

申请日：2001-08-07

申请人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

发明人： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31633

摘要： A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

摘要翻译： 公开了形成碳掺杂氧化硅层的方法。 碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。 碳掺杂氧化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。 在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中

公开(公告)号：US06907103B2

公开(公告)日：2005-06-14

申请号：US10174737

申请日：2002-06-19

申请人： S. Jeffrey Rosner ,  Nasreen Gazala Chopra ,  Ang Shih

发明人： S. Jeffrey Rosner ,  Nasreen Gazala Chopra ,  Ang Shih

IPC分类号： G01N23/04

CPC分类号： G01N23/04

摘要： An imaging system that is capable of capturing images of moving objects as they are moving with minimal blurring by moving a point source of illumination such that the position from which illumination is projected is changed as the object moves to ensure that the position of the image projected onto an imaging plane remains substantially effectively stationary. The position from which illumination is projected functions as a point source of illumination. A image sensor of the imaging system is positioned in the imaging plane and receives illumination projected from the position of the illumination source that passes through the moving object. The image sensor produces electrical signals in response to the received illumination. Because the image of the moving object remains effectively stationary on the image sensor, which is located in the imaging plane, an image of at least a portion of the moving object can be constructed with minimal blurring and without having to halt the object to capture an image of it. Because it is not necessary to halt the object and allow the object to settle before capturing an image of it, the throughput of the imaging system is increased and the captured images are greatly improved.

摘要翻译： 一种成像系统，其能够通过移动照明点光源来捕获运动物体移动时的图像，从而使照射投射的位置随着物体移动而改变，以确保投影图像的位置 在成像平面上保持基本上有效的静止。 投射照明的位置作为点光源。 成像系统的图像传感器位于成像平面中并接收从通过移动物体的照明源的位置投射的照明。 图像传感器响应于接收的照明产生电信号。 由于运动物体的图像在位于成像平面中的图像传感器上保持有效地静止，所以运动物体的至少一部分的图像可以以最小的模糊化而不必停止物体捕获 的形象。 因为在拍摄对象之前不需要停止物体并使物体稳定，所以成像系统的吞吐量增加，捕获的图像大大提高。

公开(公告)号：US06743737B2

公开(公告)日：2004-06-01

申请号：US10226717

申请日：2002-08-22

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06245690B1

公开(公告)日：2001-06-12

申请号：US09187460

申请日：1998-11-04

申请人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

发明人： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC分类号： C23C1640

CPC分类号： H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

摘要翻译： 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。