摘要:
There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要:
A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.
摘要:
An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): wherein R1 to R4 each represent a monovalent hydrocarbon group, m is 1 to 100, a, b, c and d indicate ratios of respective repeating units based on a number of all repeating units and each stand for 0 or a positive number with a proviso that c and d are not 0 at the same time and 0
摘要翻译:用于将保护性玻璃与半导体器件的硅衬底接合的粘合剂组合物含有(A)含环氧基的高分子化合物和(B)溶剂。 化合物(A)的重均分子量为3,000〜500,000,由下式(1)表示的重复单元:其中,R1〜R4各自表示一价烃基,m为1〜100,a,b,c, d表示基于全部重复单元数的各重复单元的比率,并且各自表示0或正数,条件是c和d不同时为0,0 <(c + d)/(a + b + c + d)&nlE; 1.0,X和Y是含酚羟基的二价芳族基团。
摘要:
Bisphenol derivatives having both alcoholic hydroxyl and allyl groups are novel and useful as reagents for modifying organic resins and silicone resins.
摘要:
A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要:
There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要:
A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要:
Disclosed herein is a photocurable dry film including a structure having a photocurable resin layer sandwiched between a support film and a protective film, the photocurable resin layer being formed of a photocurable resin composition including ingredients (A) to (D):(A) a silicone skeleton-containing polymer compound having the repeating units represented by the following general formula (1) wherein X and Y, respectively, a divalent organic group represented by the following general formula (2) or (3) (B) a crosslinking agent selected from formalin-modified or formalin-alcohol-modified amino condensates and phenolic compound having on average two or more methylol groups or alkoxymethylol groups in one molecule; (C) a photoacid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm; and (D) a solvent.
摘要:
Bisphenol derivatives having both alcoholic hydroxyl and allyl groups are novel and useful as reagents for modifying organic resins and silicone resins.
摘要:
The present invention-provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1-10% of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.