Resist patterning process and manufacturing photo mask
    61.
    发明申请
    Resist patterning process and manufacturing photo mask 有权
    抗蚀剂图案化工艺和制造光罩

    公开(公告)号:US20100009271A1

    公开(公告)日:2010-01-14

    申请号:US12457544

    申请日:2009-06-15

    IPC分类号: G03F1/00 G03F7/20

    CPC分类号: G03F7/0392

    摘要: There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

    摘要翻译: 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺,所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物,其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护,其中聚合物的重均分子量为4,000-7,000,特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题,存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物,其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物,具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

    Chemically amplified positive resist composition and patterning method
    62.
    发明授权
    Chemically amplified positive resist composition and patterning method 有权
    化学扩增阳性抗蚀剂组合物和图案化方法

    公开(公告)号:US06593056B2

    公开(公告)日:2003-07-15

    申请号:US09814049

    申请日:2001-03-22

    IPC分类号: G03F7039

    摘要: A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

    摘要翻译: 提供了包含有机溶剂,具有酸不稳定基团的聚合物,光酸产生剂,碱性化合物和含有至少两个烯丙氧基的化合物的化学增幅阳性抗蚀剂组合物。 抗蚀剂组合物具有高灵敏度,分辨率,耐干蚀刻性和工艺适应性,并且在碱性水溶液显影后使图案膜减薄得到改善。 抗蚀剂组合物也适用于适于形成用于制造VLSI的微尺寸接触孔图案的热流程。

    Adhesive composition and adhesive dry film
    63.
    发明授权
    Adhesive composition and adhesive dry film 有权
    粘合剂组合物和粘合剂干膜

    公开(公告)号:US08889810B2

    公开(公告)日:2014-11-18

    申请号:US13401940

    申请日:2012-02-22

    摘要: An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): wherein R1 to R4 each represent a monovalent hydrocarbon group, m is 1 to 100, a, b, c and d indicate ratios of respective repeating units based on a number of all repeating units and each stand for 0 or a positive number with a proviso that c and d are not 0 at the same time and 0

    摘要翻译: 用于将保护性玻璃与半导体器件的硅衬底接合的粘合剂组合物含有(A)含环氧基的高分子化合物和(B)溶剂。 化合物(A)的重均分子量为3,000〜500,000,由下式(1)表示的重复单元:其中,R1〜R4各自表示一价烃基,m为1〜100,a,b,c, d表示基于全部重复单元数的各重复单元的比率,并且各自表示0或正数,条件是c和d不同时为0,0 <(c + d)/(a + b + c + d)&nlE; 1.0,X和Y是含酚羟基的二价芳族基团。

    Photomask blank, resist pattern forming process, and photomask preparation process
    65.
    发明授权
    Photomask blank, resist pattern forming process, and photomask preparation process 有权
    光掩模坯料,抗蚀剂图案形成工艺和光掩模制备工艺

    公开(公告)号:US08343694B2

    公开(公告)日:2013-01-01

    申请号:US13207764

    申请日:2011-08-11

    IPC分类号: G03F9/00

    CPC分类号: G03F7/0046 G03F7/0392

    摘要: A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

    摘要翻译: 光掩模坯料具有抗蚀剂膜,其包含(A)基础树脂,(B)酸产生剂和(C)碱性化合物。 抗蚀剂膜还包含(D)包含具有侧链的聚合物的聚合物,所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链,所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物(D)的添加确保了整个抗蚀剂膜的均匀显影,能够形成具有高CD均匀性的抗蚀剂图案。

    Resist patterning process and manufacturing photo mask
    66.
    发明授权
    Resist patterning process and manufacturing photo mask 有权
    抗蚀剂图案化工艺和制造光罩

    公开(公告)号:US08110335B2

    公开(公告)日:2012-02-07

    申请号:US12457544

    申请日:2009-06-15

    CPC分类号: G03F7/0392

    摘要: There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

    摘要翻译: 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺,所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物,其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护,其中聚合物的重均分子量为4,000-7,000,特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题,存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物,其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物,具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

    PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS
    67.
    发明申请
    PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS 有权
    光电隔离膜,电阻图案形成工艺和光刻胶制备工艺

    公开(公告)号:US20110294047A1

    公开(公告)日:2011-12-01

    申请号:US13207764

    申请日:2011-08-11

    IPC分类号: G03F7/20 G03F1/00

    CPC分类号: G03F7/0046 G03F7/0392

    摘要: A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

    摘要翻译: 光掩模坯料具有抗蚀剂膜,其包含(A)基础树脂,(B)酸产生剂和(C)碱性化合物。 抗蚀剂膜还包含(D)包含具有侧链的聚合物的聚合物,所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链,所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物(D)的添加确保了整个抗蚀剂膜的均匀显影,能够形成具有高CD均匀性的抗蚀剂图案。

    PHOTOCURABLE DRY FILM, METHOD FOR PREPARING SAME, PATTERNING METHOD AND FILM FOR PROTECTING ELECTRIC AND ELECTRONIC PARTS
    68.
    发明申请
    PHOTOCURABLE DRY FILM, METHOD FOR PREPARING SAME, PATTERNING METHOD AND FILM FOR PROTECTING ELECTRIC AND ELECTRONIC PARTS 有权
    光电干燥膜,其制备方法,保护电气和电子部件的图案方法和薄膜

    公开(公告)号:US20110143092A1

    公开(公告)日:2011-06-16

    申请号:US12967163

    申请日:2010-12-14

    摘要: Disclosed herein is a photocurable dry film including a structure having a photocurable resin layer sandwiched between a support film and a protective film, the photocurable resin layer being formed of a photocurable resin composition including ingredients (A) to (D):(A) a silicone skeleton-containing polymer compound having the repeating units represented by the following general formula (1) wherein X and Y, respectively, a divalent organic group represented by the following general formula (2) or (3) (B) a crosslinking agent selected from formalin-modified or formalin-alcohol-modified amino condensates and phenolic compound having on average two or more methylol groups or alkoxymethylol groups in one molecule; (C) a photoacid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm; and (D) a solvent.

    摘要翻译: 本发明公开了一种可光固化的干膜,其具有夹在支撑膜和保护膜之间的光固化树脂层的结构,该光固化性树脂层由含有成分(A)〜(D)的光固化性树脂组合物形成:(A) 含有下述通式(1)表示的重复单元的含硅氧烷骨架的高分子化合物,其中X和Y分别为由以下通式(2)或(3)(B)表示的二价有机基团选择的交联剂 由福尔马林改性或福尔马林醇修饰的氨基缩合物和在一个分子中平均有两个或多个羟甲基或烷氧基羟甲基的酚类化合物; (C)能够通过用波长为190〜500nm的光分解而产生酸的光酸产生剂; 和(D)溶剂。

    Positive resist composition, and patterning process using the same
    70.
    发明申请
    Positive resist composition, and patterning process using the same 审中-公开
    正型抗蚀剂组合物和使用其的图案化工艺

    公开(公告)号:US20060183051A1

    公开(公告)日:2006-08-17

    申请号:US11339590

    申请日:2006-01-26

    IPC分类号: G03C1/76

    CPC分类号: G03F7/0392

    摘要: The present invention-provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1-10% of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

    摘要翻译: 本发明提供一种正型抗蚀剂组合物,其中至少包含在基础树脂中的聚合物具有在248nm波长的光下具有吸收性的酸不稳定基团的重复单元,重复单元的比例为1-10% 包括在基础树脂中的聚合物的所有重复单元。 可以提供与常规正性抗蚀剂组合物相同或更高的灵敏度和分辨率的正性抗蚀剂组合物,特别是通过其具有高反射率的基板上的图案轮廓优异并产生驻波和线边缘粗糙度 减少了