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公开(公告)号：US20060183051A1
公开(公告)日：2006-08-17
申请号：US11339590
申请日：2006-01-26
申请人： Takanobu Takeda , Eiji Fukuda , Kazunori Maeda , Satoshi Watanabe
发明人： Takanobu Takeda , Eiji Fukuda , Kazunori Maeda , Satoshi Watanabe
IPC分类号： G03C1/76
CPC分类号： G03F7/0392
摘要： The present invention-provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1-10% of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.
摘要翻译： 本发明提供一种正型抗蚀剂组合物，其中至少包含在基础树脂中的聚合物具有在248nm波长的光下具有吸收性的酸不稳定基团的重复单元，重复单元的比例为1-10％ 包括在基础树脂中的聚合物的所有重复单元。 可以提供与常规正性抗蚀剂组合物相同或更高的灵敏度和分辨率的正性抗蚀剂组合物，特别是通过其具有高反射率的基板上的图案轮廓优异并产生驻波和线边缘粗糙度 减少了
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2.发明授权Photomask blank, resist pattern forming process, and photomask preparation process 有权光掩模坯料，抗蚀剂图案形成工艺和光掩模制备工艺公开(公告)号：US08343694B2
公开(公告)日：2013-01-01
申请号：US13207764
申请日：2011-08-11
IPC分类号： G03F9/00
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要翻译： 光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。 抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。
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公开(公告)号：US08110335B2
公开(公告)日：2012-02-07
申请号：US12457544
申请日：2009-06-15
申请人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
发明人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
CPC分类号： G03F7/0392
摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要翻译： 公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为 由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。 目前存在的问题之一是线边缘粗糙度。 为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。 可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。
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4.发明申请PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS 有权光电隔离膜，电阻图案形成工艺和光刻胶制备工艺公开(公告)号：US20110294047A1
公开(公告)日：2011-12-01
申请号：US13207764
申请日：2011-08-11
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要翻译： 光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。 抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。
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公开(公告)号：US07977027B2
公开(公告)日：2011-07-12
申请号：US11876298
申请日：2007-10-22
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.
摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。
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6.发明申请Chemically-amplified positive resist composition and patterning process thereof 有权化学扩增的正型抗蚀剂组合物及其构图工艺公开(公告)号：US20100009286A1
公开(公告)日：2010-01-14
申请号：US12457327
申请日：2009-06-08
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。
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7.发明申请公开(公告)号：US20080090179A1
公开(公告)日：2008-04-17
申请号：US11902760
申请日：2007-09-25
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
CPC分类号： G03F7/0397 , Y10S430/106
摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.
摘要翻译： 公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。 可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性 抵抗性。
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公开(公告)号：US20060166133A1
公开(公告)日：2006-07-27
申请号：US11328126
申请日：2006-01-10
IPC分类号： G03C1/76
CPC分类号： G03F7/0382 , C08L25/18 , C08L2666/04
摘要： A negative resist composition is provided comprising a polymer comprising recurring units having formula (1), a photoacid generator, and a crosslinker. In formula (1), X is alkyl or alkoxy, R1 and R2 are H, OH, alkyl, substitutable alkoxy or halogen, R3 and R4 are H or CH3, n is an integer of 1 to 4, m and k are an integer of 1 to 5, p, q and r are positive numbers. The composition has a high contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution and good etching resistance.
摘要翻译： 提供了一种负型抗蚀剂组合物，其包括具有式（1）的重复单元，光致酸产生剂和交联剂的聚合物。 在式（1）中，X是烷基或烷氧基，R 1和R 2是H，OH，烷基，可取代的烷氧基或卤素，R 3， CH 2和R 4是H或CH 3，n是1至4的整数，m和k是1至5的整数，p，q和r 是正数。 该组合物在曝光前后具有高的对比度的碱溶解速率，高灵敏度，高分辨率和良好的抗蚀刻性。
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9.发明授权Chemically amplified positive resist composition and resist patterning process 有权化学扩增正性抗蚀剂组合物和抗蚀剂图案化工艺公开(公告)号：US08252518B2
公开(公告)日：2012-08-28
申请号：US12591540
申请日：2009-11-23
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392
摘要： There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.
摘要翻译： 公开了一种化学放大的正性抗蚀剂组合物，以形成用于光刻的化学放大的抗蚀剂膜，其中化学放大的正性抗蚀剂组合物至少包含（A）不溶于或难溶于碱性溶液的基础树脂， 具有酚羟基被叔烷基保护的重复单元，当叔烷基被除去时可溶于碱性溶液; （B）酸发生剂; （C）基本组成部分; 和（D）有机溶剂，并且通过旋涂法获得固体成分浓度，从而得到膜厚为10〜100nm的化学放大型抗蚀剂膜。 在平版印刷法中，可以提供化学放大的正性抗蚀剂组合物，其在形成具有10至100nm的膜厚度的化学放大型抗蚀剂膜时产生具有抑制的由薄膜变薄引起的LER劣化的高分辨率，以及 使用其的抗蚀剂图案化工艺。
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10.发明申请Chemically amplified positive resist composition and resist patterning process 有权化学扩增正性抗蚀剂组合物和抗蚀剂图案化工艺公开(公告)号：US20100167207A1
公开(公告)日：2010-07-01
申请号：US12591540
申请日：2009-11-23
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392
摘要： There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.
摘要翻译： 公开了一种化学放大的正性抗蚀剂组合物，以形成用于光刻的化学放大的抗蚀剂膜，其中化学放大的正性抗蚀剂组合物至少包含（A）不溶于或难溶于碱性溶液的基础树脂， 具有酚羟基被叔烷基保护的重复单元，当叔烷基被除去时可溶于碱性溶液; （B）酸发生剂; （C）基本组成部分; 和（D）有机溶剂，并且通过旋涂法获得固体成分浓度，从而得到膜厚为10〜100nm的化学放大型抗蚀剂膜。 在平版印刷法中，可以提供化学放大的正性抗蚀剂组合物，其在形成10至100nm的膜厚度的化学放大抗蚀剂膜时产生具有抑制的由薄膜变薄引起的LER劣化的高分辨率，以及 使用其的抗蚀剂图案化工艺。
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