Game ball
    62.
    发明授权
    Game ball 失效
    游戏球

    公开(公告)号:US4856781A

    公开(公告)日:1989-08-15

    申请号:US945617

    申请日:1986-12-23

    IPC分类号: A63B41/08 A63B41/00

    摘要: A ball for ball game comprises a rubber hollow spherical bladder, a valve holder fixed to the tube for charging air into the tube, a valve member attached to the valve holder; a fabric layer covering the bladder surface and a leather layer. The fabric layer is composed of a plurality of equilateral quadrilateral pieces sewn together to form a sphere. The equilateral quadrilateral pieces each include two sheets of approximately trapezodial fabric pieces that are sewed together symmetrically at a central seam line. The equilateral quadrilaterla pieces are sewed together such that central seam lines of adjacent equilateral quadrilateral pieces fall at right angles to ech other. The fabric layer gives sphericity, dimensional stability and durability to the ball. The leather layer is adhered to the fabric layer directly or through a rubber based thin intermediate layer. On a circumferential line in the fabric layer which includes one seam line, at least one other seam line exists at a prescribed interval to equally divide the un-sewn portions. All segments on the spherical surface of the fabric layer, which are divided by a plurality of circumferential lines including all of the seam lines, have the same shape.

    摘要翻译: 用于球赛的球包括橡胶空心球形球囊,固定到管上以将空气充入管中的阀座,连接到阀座的阀构件; 覆盖膀胱表面的织物层和皮革层。 织物层由缝合在一起形成球体的多个等边四边形片组成。 等边四边形件各自包括两张约中间缝线对称地缝合的大致梯形织物片。 等边四边形片缝合在一起,使得相邻等边四边形片的中心接缝线与其他方向成直角。 织物层赋予球的球形度,尺寸稳定性和耐久性。 皮革层直接或通过基于橡胶的中间层粘附到织物层。 在包括一条接缝线的织物层的周向线上,以规定的间隔存在至少一条另外的接缝线,以均匀分割未缝制的部分。 由包括所有接缝线的多个圆周线划分的织物层的球形表面上的所有部分具有相同的形状。

    Color ink ribbon
    64.
    发明授权
    Color ink ribbon 失效
    彩色墨带

    公开(公告)号:US4735519A

    公开(公告)日:1988-04-05

    申请号:US861890

    申请日:1986-05-12

    申请人: Masayuki Tanaka

    发明人: Masayuki Tanaka

    CPC分类号: B41J33/42 B41J35/18

    摘要: A color ink ribbon in which one half of the width of the ribbon is utilized for the left-to-right (first) printing direction and the other half of the width is utilized for the right-to-left (second) printing direction, and in which the sequence of ink layers composed of at least three colors is the same for both printing directions, whereby the ribbon can be used for printing in both the forward and reverse directions without wasteful non-utilization of areas in either half of the ribbon.

    摘要翻译: 用于左右(第一)打印方向的色带的宽度的一半的宽度的宽度的另一半用于从右到左(第二)打印方向的彩色墨带, 并且其中由至少三种颜色组成的油墨层序列对于两个打印方向都是相同的,由此可以使带状物在前后方向上进行打印,而不浪费任何一方的带状区域的不利用 。

    Toothed belt
    65.
    发明授权
    Toothed belt 失效
    齿形带

    公开(公告)号:US4604081A

    公开(公告)日:1986-08-05

    申请号:US657739

    申请日:1984-10-04

    IPC分类号: F16G1/28

    CPC分类号: F16G1/28

    摘要: A toothed belt having a fabric adhered to the toothed portion of the belt formed of synthetic resin yarns having an ultimate viscosity of greater than approximately 1.30. In the illustrated embodiment, the yarns extending in the longitudinal direction of the belt are fully processed yarns. The cloth is preferably a woven cloth wherein one or the other of the weft and warp are wooly processed. The use of the disclosed cloth provides a substantial improvement in resistance of the belt to cracking and shearing of the teeth in use.

    摘要翻译: 具有粘合到由具有大于约1.30的最终粘度的合成树脂纱线形成的带的齿形部分的织物的齿形带。 在所示实施例中,沿着带的纵向方向延伸的纱线是完全加工的纱线。 布优选是其中纬纱和经纱中的一个或另一个被毛加工的织布。 所公开的布的使用提供了使用中的带对开裂和剪切的带的阻力的显着改进。

    High-resolution image generation method
    66.
    发明授权
    High-resolution image generation method 有权
    高分辨率图像生成方法

    公开(公告)号:US09294654B2

    公开(公告)日:2016-03-22

    申请号:US12446760

    申请日:2007-09-26

    摘要: The present invention provides a high-resolution image generation method which is capable of generating a high-resolution image from multiple low-resolution images having displacements without using an iterative computation.A high-resolution image generation method for generating a high-resolution image from multiple low-resolution images having displacements, comprises a first step of performing a registration processing of multiple low-resolution images; a second step of generating an average image having the undefined pixels and a weighted image based on the displacement information obtained by the registration processing and multiple low-resolution images; and a third step of generating the high-resolution image by estimating pixel values of the undefined pixels included in the average image.

    摘要翻译: 本发明提供一种高分辨率图像生成方法,其能够从具有位移的多个低分辨率图像生成高分辨率图像,而不使用迭代计算。 一种用于从具有位移的多个低分辨率图像生成高分辨率图像的高分辨率图像生成方法,包括执行多个低分辨率图像的注册处理的第一步骤; 基于通过登记处理和多个低分辨率图像获得的位移信息,生成具有未定义像素的平均图像和加权图像的第二步骤; 以及第三步骤,通过估计包括在平均图像中的未定义像素的像素值来产生高分辨率图像。

    Nonvolatile semiconductor memory device and manufacturing method thereof
    67.
    发明授权
    Nonvolatile semiconductor memory device and manufacturing method thereof 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US09117665B2

    公开(公告)日:2015-08-25

    申请号:US13601266

    申请日:2012-08-31

    申请人: Masayuki Tanaka

    发明人: Masayuki Tanaka

    摘要: In accordance with an embodiment, a nonvolatile semiconductor memory device includes a substrate including a semiconductor layer including an active region, a first insulating film on the active region, a charge storage layer on the first insulating film, an element isolation insulating film defining the active region, a second insulating film, and a control electrode on the second insulating film. The top surface of the element isolation insulating film is placed at a height between the top surface and the bottom surface of the charge storage layer, thereby forming a step constituted of the charge storage layer and the element isolation insulating film. The second insulating film covers the step and the charge storage layer. The second insulating film includes a first silicon oxide film and a first silicon nitride film on the first silicon oxide film. Nitrogen concentration in the first silicon nitride film is non-uniform.

    摘要翻译: 根据一个实施例,一种非易失性半导体存储器件包括:衬底,该衬底包括具有有源区的半导体层,有源区上的第一绝缘膜,第一绝缘膜上的电荷存储层,限定有源区的元件隔离绝缘膜 区域,第二绝缘膜和第二绝缘膜上的控制电极。 元件隔离绝缘膜的上表面被放置在电荷存储层的顶表面和底表面之间的高度处,从而形成由电荷存储层和元件隔离绝缘膜构成的步骤。 第二绝缘膜覆盖步骤和电荷存储层。 第二绝缘膜包括在第一氧化硅膜上的第一氧化硅膜和第一氮化硅膜。 第一氮化硅膜中的氮浓度不均匀。

    Dimming device and lighting system
    68.
    发明授权
    Dimming device and lighting system 有权
    调光装置和照明系统

    公开(公告)号:US08823286B2

    公开(公告)日:2014-09-02

    申请号:US13614232

    申请日:2012-09-13

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0815

    摘要: According to one embodiment, a control section receives supply of control power from a control power supply section through a capacitive element and divides, a period of each half cycle of an alternating-current voltage into a first section, a second section, and a third section. In the first section, the control section subjects a switch section to conduction control to supply electric power to a load and stops a converting action of the control power supply section. In the second section, the control section subjects the switch section to non-conduction control to interrupt the power supply to the load and stops the converting action of the control power supply section. In the third section, the control section subjects the switch section to the non-conduction control to interrupt the power supply to the load and causes the converting action of the control power supply to operate.

    摘要翻译: 根据一个实施例,控制部分通过电容元件接收来自控制电源部分的控制电力供应,并将交流电压的每个半周期的周期划分成第一部分,第二部分和第三部分 部分。 在第一部分中,控制部使开关部进行导通控制以向负载供电,并停止控制电源部的转换动作。 在第二部分中,控制部分使开关部分进行非导通控制以中断对负载的电源,并停止控制电源部分的转换动作。 在第三部分中,控制部分使开关部分对非导通控制进行中断对负载的电源,并使控制电源的转换动作起作用。

    Semiconductor memory device and method for manufacturing the same
    70.
    发明授权
    Semiconductor memory device and method for manufacturing the same 失效
    半导体存储器件及其制造方法

    公开(公告)号:US08466022B2

    公开(公告)日:2013-06-18

    申请号:US13052456

    申请日:2011-03-21

    申请人: Masayuki Tanaka

    发明人: Masayuki Tanaka

    IPC分类号: H01L21/336 H01L29/792

    摘要: According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a tunnel insulating film, a first electrode, an interelectrode insulating film and a second electrode. The tunnel insulating film is provided on the semiconductor substrate. The first electrode is provided on the tunnel insulating film. The interelectrode insulating film is provided on the first electrode. The second electrode is provided on the interelectrode insulating film. The interelectrode insulating film includes a stacked insulating layer, a charge storage layer and a block insulating layer. The charge storage layer is provided on the stacked insulating layer. The block insulating layer is provided on the charge storage layer. The stacked insulating layer includes a first insulating layer, a quantum effect layer and a second insulating layer. The quantum effect layer is provided on the first insulating layer. The second insulating layer is provided on the quantum effect layer.

    摘要翻译: 根据一个实施例,半导体存储器件包括半导体衬底,隧道绝缘膜,第一电极,电极间绝缘膜和第二电极。 隧道绝缘膜设置在半导体衬底上。 第一电极设置在隧道绝缘膜上。 电极间绝缘膜设置在第一电极上。 第二电极设置在电极间绝缘膜上。 电极间绝缘膜包括堆叠绝缘层,电荷存储层和块绝缘层。 电荷存储层设置在堆叠绝缘层上。 块绝缘层设置在电荷存储层上。 层叠绝缘层包括第一绝缘层,量子效应层和第二绝缘层。 量子效应层设置在第一绝缘层上。 第二绝缘层设置在量子效应层上。