摘要:
The invention relates to an electronic assembly having a non-volatile memory device with a controllable write protection feature and a switching configuration for generating a write protection signal from potentials at the supply terminals of the electronic assembly.
摘要:
A semiconductor module having a configurable data width of an output bus has data connecting pads as well as driver circuits having a respective output that is connected to an associated data connecting pad. At least one of the data connecting pads, which is not used for interchanging data or commands during operation, is permanently connected to a connection for an internal supply voltage. Thus, in a module configuration with a reduced number of data lines being used, the remaining data lines can be operated at an increased frequency, since the signal-to-ground ratio is improved.
摘要:
A receiver circuit provides a first stage having an input for receiving input signals and an output node. The first stage includes an amplifier. A second stage has an input coupled to the output of the first stage. The second stage includes a switching circuit coupled to the output node of the first stage for driving the input signals by favoring a rising edge or a falling edge in accordance with a control signal. The second stage also includes a feedback loop coupled to an output of the second stage. The feedback loop provides the control signal for switching the switching circuit to favor the rising edge or falling edge.
摘要:
A semiconductor memory device is disclosed which includes an input terminal for receiving, and an output terminal for producing a data word, each having a predetermined number of bits. An internal memory array stores a plurality of error correcting encoded codewords each encoding more than one data word. An error correcting encoder is coupled between the input terminal and the memory array for generating an error correcting encoded codeword, encoding the received data word, and storing the codeword in the internal memory array. An error correcting decoder is coupled between the internal memory array and the output terminal to retrieve an error correction encoded codeword from the internal memory array, correct any detected errors, and produce one of the more than one data words encoded in the retrieved codeword at the output terminal.
摘要:
A fully differential resistor-string digital-to-analog converter wherein a resistor network having half the number of resistors of an otherwise standard digital-to-analog convertor of this type is enabled with the assistance of a first decoder, a second decoder and a subtraction unit thus reducing the required chip area and the overall switching time.
摘要:
A circuit configuration for adjusting the quadrature-axis current component of a push-pull output stage has two transistors of opposed conduction type and is triggered by an input signal. A variable being proportional to the quadrature-axis current component of the push-pull output stage is derived from a comparison circuit. A final control element adjusts the quadrature-axis current components of the push-pull output stage and of the comparison circuit for matching the variable to a reference variable.
摘要:
A fuse, having reduced blow-current requirements thereby minimizing the power supply voltage and chip area required for the driver transistors, has a geometry which is characterized by an essentially uniform width dimension throughout the primary axis of the fuse link but having at least one approximately right angle bend in the fuse link. The fuse can be blown open with approximately 10% of the input current density required for a straight fuse of equal cross-sectional area. The reason for this is that, due to current crowding, the current density is accentuated at the inside corner of the bend. As the input current to the fuse is increased, a current density is reached at the inside corner which causes the fuse material to melt. A notch forms at the inside corner. The fuse geometry altered by the notching causes even more severe current crowding at the notches, and this in turn makes the melting propagate across the width of the fuse. The predictability of the point of fuse blow out allows even greater circuit densities while minimizing the possibility of accidental damage to adjacent devices.