公开(公告)号：US5543356A

公开(公告)日：1996-08-06

申请号：US338137

申请日：1994-11-09

申请人： Eiichi Murakami ,  Shin'icniro Kimura

发明人： Eiichi Murakami ,  Shin'icniro Kimura

IPC分类号： H01L21/22 ,  H01L21/225 ,  H01L21/8238 ,  H01L21/223

CPC分类号： H01L21/823814 ,  H01L21/22 ,  H01L21/2255

摘要： A method of impurity doping into a semiconductor, which comprises irradiating energy rays such as excimer laser beam (or UV-rays) to a predetermined region of a hydrogen terminated silicon surface to remove hydrogen atom layers terminating the silicon surface thereby forming a patterned silicon surface region not terminated with hydrogen and selectively adsorbing impurities on the silicon surface region not terminated with hydrogen, to conduct impurity doping. When such an impurity doping method is adopted, junctions having shallow and abrupt distribution for use in a miniaturized MOSFET or the like can be attained with a lesser number of the steps. Since the impurity doping process can be constituted as a clean and all dry in-situ process without using photoresist at all, it can also provide advantageous effect in view of enhanced yield and shortened production period.

摘要翻译： 一种杂质掺杂到半导体中的方法，其包括将能量射线如准分子激光束（或紫外线）照射到氢封端的硅表面的预定区域以去除终止硅表面的氢原子层，从而形成图案化的硅表面 未被氢终止的区域并且选择性地吸附在未被氢端接的硅表面区域上的杂质，以进行杂质掺杂。 当采用这样的杂质掺杂方法时，可以通过较少数量的步骤来获得用于小型化的MOSFET等中具有浅而突然分布的结。 由于杂质掺杂工艺可以构成干净且全干燥的原位工艺，完全不使用光致抗蚀剂，所以鉴于增加的产量和缩短的生产周期，也可以提供有利的效果。

公开(公告)号：US5066355A

公开(公告)日：1991-11-19

申请号：US438290

申请日：1989-11-16

申请人： Masanobu Miyao ,  Kiyokazu Nakagawa ,  Kiyonori Ohyu ,  Eiichi Murakami ,  Takashi Ohshima

发明人： Masanobu Miyao ,  Kiyokazu Nakagawa ,  Kiyonori Ohyu ,  Eiichi Murakami ,  Takashi Ohshima

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L21/28518 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  Y10S438/933 ,  Y10S438/938

摘要： A method of producing a hetero structure, including the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on the first single crystal layer by hetero epitaxial growth, the second single crystal layer being formed of semiconductor or metal silicide different from the material of the first single crystal layer, wherein both of the steps are continuously conducted without taking the hetero structure out of a producing device. Further, the number of the hydrogen atoms or the halogen atoms to be deposited is equal to or in the range of .+-.50% with reference to the number of dangling bonds existing in a hetero interface between the first single crystal layer and the second single crystal layer, so that the lattice defects in the hetero interface can be reduced.

公开(公告)号：US4808546A

公开(公告)日：1989-02-28

申请号：US9476

申请日：1987-02-02

申请人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

发明人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L29/66772 ,  H01L21/2022 ,  H01L21/76248 ,  Y10S148/003 ,  Y10S148/048 ,  Y10S148/09 ,  Y10S148/154

摘要： Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

摘要翻译： 在非晶Si膜中，用掩模覆盖要形成诸如MOS晶体管的沟道区域的低掺杂区域的区域，并且未覆盖区域掺杂有杂质。 之后，通过固相外延生长使非晶Si膜退火并转向信号晶体，并且将掩模本身用作半导体器件的电极。 通过这种杂质掺杂，可以形成大尺寸的单晶Si膜，并且杂质掺杂可以与电极形成自对准，以产生高度集成的半导体电路。

公开(公告)号：US4459210A

公开(公告)日：1984-07-10

申请号：US379698

申请日：1982-05-19

申请人： Eiichi Murakami ,  Ryozo Hasegawa ,  Kimihiko Matzuzawa

发明人： Eiichi Murakami ,  Ryozo Hasegawa ,  Kimihiko Matzuzawa

IPC分类号： A61L33/06 ,  B01D67/00 ,  B01D69/08 ,  B01D71/16 ,  C08L1/12 ,  B01D39/14

CPC分类号： B01D69/087 ,  A61L33/062 ,  B01D67/0011 ,  B01D69/08 ,  B01D71/16 ,  C08L1/12 ,  B01D2325/12 ,  B01D2325/34 ,  Y10T428/1397 ,  Y10T428/2975

摘要： A porous membrane which is composed of cellulose acetate and acrylic polymer, for example, poly(methyl methacrylate) or methyl acrylate-methyl methacrylate copolymer, is highly suitable for plasmapheresis. A polymer alloy consisting of cellulose acetate, acrylic polymer and a small amount of cellulose nitrate has a good spinnability to produce a hollow fiber type membrane and has an excellent biocompatibility.

摘要翻译： 由醋酸纤维素和丙烯酸聚合物（例如聚甲基丙烯酸甲酯）或丙烯酸甲酯 - 甲基丙烯酸甲酯共​​聚物组成的多孔膜非常适用于血浆置换。 由醋酸纤维素，丙烯酸类聚合物和少量硝酸纤维素组成的聚合物合金具有良好的纺丝性，可制造中空纤维型膜，并且具有优异的生物相容性。