利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

240 条记录 (耗时 0.043 秒)

    Semiconductor device and method of manufacture thereof
    61.
    发明申请
    Semiconductor device and method of manufacture thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20050224796A1

    公开(公告)日：2005-10-13

    申请号：US11137513

    申请日：2005-05-26

    申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

    发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

    IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786 ,  H01L31/20

    CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

    摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

    摘要翻译： 提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。 通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜形成轻掺杂漏极（LDD）区域。 首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。 此时也在栅电极下方形成低浓度杂质区。 之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。 在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。

    Electro-optical device and electronic device
    66.
    发明授权
    Electro-optical device and electronic device 有权

    公开(公告)号：US06759681B1

    公开(公告)日：2004-07-06

    申请号：US09578895

    申请日：2000-05-26

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kunitaka Yamamoto ,  Toshimitsu Konuma

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kunitaka Yamamoto ,  Toshimitsu Konuma

    IPC分类号： H01L2904

    摘要： An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.

    Active matrix display and forming method thereof
    69.
    发明授权
    Active matrix display and forming method thereof 有权
    有源矩阵显示及其形成方法

    公开(公告)号：US06355942B1

    公开(公告)日：2002-03-12

    申请号：US09287551

    申请日：1999-04-05

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yuji Kawasaki ,  Toshimitsu Konuma ,  Satoshi Teramoto ,  Yoshiharu Hirakata

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yuji Kawasaki ,  Toshimitsu Konuma ,  Satoshi Teramoto ,  Yoshiharu Hirakata

    IPC分类号： H01L29786

    CPC分类号： G02F1/13454 ,  G02F1/1339

    摘要： An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.

    摘要翻译： 一种具有提高可靠性的有源矩阵液晶显示器。 像素区域和外围驱动器电路整体地封装在显示器上。 形成外围驱动电路的TFT位于液晶材料侧的密封材料层的内部，从而保护外围驱动电路免受外部湿气和污染物的影响。 这增强了外围驱动电路的长期可靠性。 像素TFT布置在像素区域中。 从形成外围驱动电路的TFT到像素TFT的引线缩短。 这导致电阻降低。 结果，改善了显示特性。

    Liquid crystal display device and method for producing the same
    70.
    发明授权
    Liquid crystal display device and method for producing the same 失效
    液晶显示装置及其制造方法

    公开(公告)号：US6025901A

    公开(公告)日：2000-02-15

    申请号：US695595

    申请日：1996-08-12

    申请人： Masahiro Adachi ,  Yasuyoshi Kaise ,  Jun Koyama ,  Toshimitsu Konuma ,  Shunpei Yamazaki

    发明人： Masahiro Adachi ,  Yasuyoshi Kaise ,  Jun Koyama ,  Toshimitsu Konuma ,  Shunpei Yamazaki

    IPC分类号： G02F1/13 ,  G02F1/1345

    CPC分类号： G02F1/13452

    摘要： The liquid crystal display device of the invention includes: a first substrate having a first surface, a second surface and at least four side surfaces; a second substrate having a surface opposed to the first surface of the first substrate; a liquid crystal layer interposed between the first surface of the first substrate and the surface of the second substrate; a plurality of pixel electrodes; a plurality of switching elements, each of the switching elements supplying a signal to a corresponding one of the plurality of pixel electrodes; drivers for driving the plurality of switching elements; and a controller for controlling the driver. In the liquid crystal display device, the drivers are provided on the first surface of the first substrate, and the controller is provided above the second surface of the first substrate.

    摘要翻译： 本发明的液晶显示装置包括：具有第一表面，第二表面和至少四个侧表面的第一基底; 第二基板，具有与第一基板的第一表面相对的表面; 插入在第一基板的第一表面和第二基板的表面之间的液晶层; 多个像素电极; 多个开关元件，每个所述开关元件向所述多个像素电极中的相应一个提供信号; 用于驱动多个开关元件的驱动器; 以及用于控制驾驶员的控制器。 在液晶显示装置中，驱动器设置在第一基板的第一表面上，并且控制器设置在第一基板的第二表面之上。