公开(公告)号：US07384807B2

公开(公告)日：2008-06-10

申请号：US10861743

申请日：2004-06-03

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  Y10S438/956

Abstract: A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspect, the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.

Abstract translation: 制造垂直结构光电器件的方法包括在晶体衬底上制造多个垂直结构光电器件，然后使用激光剥离工艺去除衬底。 然后，该方法制造金属支撑结构来代替基底。 一方面，代替基板制造金属支撑结构的步骤包括使用电镀和无电镀中的至少一种电镀金属支撑结构的步骤。 在一个方面，垂直结构是GaN基垂直结构，晶体衬底包括蓝宝石，金属支撑结构包括铜。 本发明的优点包括制造适合大量生产的垂直结构LED，具有高可靠性和高产量。

公开(公告)号：US20080128733A1

公开(公告)日：2008-06-05

申请号：US11978680

申请日：2007-10-30

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract translation: 由发射第一波长的光的LED芯片和LED芯片上的薄膜层组成的发光LED器件改变发光的颜色。 例如，可以使用蓝色LED芯片来产生白光。 薄膜层有利地由诸如磷光体的荧光材料组成，和/或包括锡。 使用化学气相沉积有利地沉积薄膜层。

公开(公告)号：US06949395B2

公开(公告)日：2005-09-27

申请号：US09982980

申请日：2001-10-22

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/02 ,  H01L33/46 ,  H01L21/00

CPC classification number: H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract translation: 形成发光二极管的方法包括在透明基板上形成透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 在基板上形成划线，以分离基板上的二极管。 此外，AlGaN的包覆层在p-GaN层和有源层之间。